Method of porogen removal from porous low-k films using UV radiation
First Claim
1. A method of preparing a porous low-k dielectric material on a substrate, the method comprising:
- forming a precursor film on the substrate, the precursor film comprising a porogen and a structure former;
exposing the precursor film to ultraviolet radiation to facilitate removing the porogen from the precursor film and thereby create voids within the dielectric material to form the porous low-k dielectric material;
annealing the porous low-k dielectric material and;
exposing the porous low-k dielectric material to a silanol capping agent;
wherein the exposure to ultraviolet radiation, annealing and exposure to a silanol capping agent take place in a single process vessel.
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Abstract
Methods of preparing a porous low-k dielectric material on a substrate are provided. The methods involve the use of ultraviolet radiation to react with and remove porogen from a porogen containing precursor film, leaving a porous low-k dielectric matrix. Methods using oxidative conditions and non-oxidative conditions are described. The methods described may be used to remove porogen from porogen-containing precursor films. The porogen may be a hydrocarbon such as a terpene (e.g., alpha-terpinene) or a norbornene (e.g., ENB). The resulting porous low-k dielectric matrix can then be annealed to remove water and remaining silanols capped to protect it from degradation by ambient conditions, which methods will also be described.
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Citations
38 Claims
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1. A method of preparing a porous low-k dielectric material on a substrate, the method comprising:
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forming a precursor film on the substrate, the precursor film comprising a porogen and a structure former; exposing the precursor film to ultraviolet radiation to facilitate removing the porogen from the precursor film and thereby create voids within the dielectric material to form the porous low-k dielectric material; annealing the porous low-k dielectric material and; exposing the porous low-k dielectric material to a silanol capping agent;
wherein the exposure to ultraviolet radiation, annealing and exposure to a silanol capping agent take place in a single process vessel. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23)
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24. A method of preparing a porous low-k dielectric material on a substrate, the method comprising:
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forming a precursor film on the substrate, the precursor film comprising a porogen and a structure former; exposing the precursor film to ultraviolet radiation to facilitate removing the porogen from the precursor film and thereby create voids within the dielectric material to form the porous low-k dielectric material; annealing the porous low-k dielectric material and exposing the porous low-k dielectric material to a silanol capping agent;
wherein the annealing and silanol capping steps are performed simultaneously.
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25. A method of preparing a porous low-k dielectric material on a partially fabricated integrated circuit, the method comprising:
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providing the partially fabricated integrated circuit to a process chamber, wherein the partially fabricated integrated circuit comprises a precursor film having a porogen and a structure former; exposing the partially fabricated integrated circuit to ultraviolet radiation in an inert environment such that the ultraviolet radiation interacts with the porogen to produce a volatile decomposition products; and removing the volatile decomposition products from the precursor film, leaving the porous low-k dielectric material on the partially fabricated integrated circuit; annealing the porous low-k dielectric material; and exposing the porous low-k dielectric material to a silanol capping agent;
wherein the exposure to ultraviolet radiation, annealing and exposure to a silanol capping agent take place in a single process vessel. - View Dependent Claims (26, 27, 28, 29)
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30. A method of preparing a porous low-k dielectric material on a partially fabricated integrated circuit, the method comprising:
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providing the partially fabricated integrated circuit to a process chamber, wherein the partially fabricated integrated circuit comprises a precursor film having a porogen and a structure former; exposing the partially fabricated integrated circuit to ultraviolet radiation in an inert environment such that the ultraviolet radiation interacts with the porogen to produce a volatile decomposition products; and removing the volatile decomposition products from the precursor film, leaving the porous low-k dielectric material on the partially fabricated integrated circuit; annealing the porous low-k dielectric material; and exposing the porous low-k dielectric material to a silanol capping agent, wherein the annealing and silanol capping steps are performed simultaneously.
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31. A method of preparing a porous low-k dielectric material on a partially fabricated integrated circuit, the method comprising:
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providing the partially fabricated integrated circuit to a process chamber, wherein the partially fabricated integrated circuit comprises a precursor film having a porogen and a structure former; exposing the partially fabricated integrated circuit to ultraviolet radiation in the presence of oxygen to produce oxidizing conditions in which the porogen is oxidized to produce porogen oxidation products, which are removed from the precursor film, leaving the porous low-k dielectric material on the partially fabricated integrated circuit; annealing the porous low-k dielectric material; and exposing the porous low-k dielectric material to a silanol capping agent;
wherein the wherein the annealing and silanol capping steps are performed simultaneously. - View Dependent Claims (32, 33, 34, 35, 36, 37, 38)
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Specification