Formation of boride barrier layers using chemisorption techniques

• US 7,208,413 B2
• Filed: 11/19/2004
• Issued: 04/24/2007
• Est. Priority Date: 06/27/2000
• Status: Expired due to Fees

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Mak, Alfred, Byun, Jeong Soo
• Primary Examiner(s): Pham; Thanhha S.
• Application Number:
  US10/993,925
• Publication Number:
  US 20050118804A1
• Time in Patent Office: 886 Days
• Field of Search: 438680-681, 438/653, 438/648, 438/656, 427/255.38, 427/255.39, 427/255.391
• US Class Current: 438/680
• CPC Class Codes: C23C 16/38 Borides
• CPC Class Codes: C23C 16/45529 specially adapted for making a layer stack of alternating different compositions or gradient compositions
• CPC Class Codes: C23C 16/45531 specially adapted for making ternary or higher compositions
• CPC Class Codes: C23C 16/45553 characterized by the use of precursors specially adapted for ALD
• CPC Class Codes: H01L 21/28562 Selective deposition
• CPC Class Codes: H01L 21/76843 formed in openings in a dielectric
• CPC Class Codes: H01L 21/76846 Layer combinations

Abstract

A method of forming a boride layer for integrated circuit fabrication is disclosed. In one embodiment, the boride layer is formed by chemisorbing monolayers of a boron-containing compound and one refractory metal compound onto a substrate. In an alternate embodiment, the boride layer has a composite structure. The composite boride layer structure comprises two or more refractory metals. The composite boride layer is formed by sequentially chemisorbing monolayers of a boron compound and two or more refractory metal compounds on a substrate.

Claims

1. A method for depositing a metal-containing layer on a substrate, comprising:

positioning a substrate within a process chamber; and

forming a metal boride layer on at least a portion of the substrate by sequentially chemisorbing monolayers of a boron-containing compound and a metal-containing compound on the substrate during an atomic layer deposition process wherein the metal boride layer is formed at a temperature of less than about 500°

C.

2. The method of claim 1, wherein the substrate is exposed to a purge gas following chemisorption of each monolayer.

3. The method of claim 2, wherein the boron-containing compound is a borane compound.

4. The method of claim 3, wherein the borane compound is diborane.

5. The method of claim 4, wherein forming the metal boride layer is formed at a temperature of less than about 400°

C.

6. The method of claim 2, wherein the metal-containing compound is titanium tetrachloride.

7. The method of claim 2, wherein the purge gas comprises a gas selected from the group consisting of hydrogen, helium, argon, and mixtures thereof.

8. The method of claim 1, wherein the metal boride layer is formed at a temperature of less than about 300°

C.

9. A method for forming a titanium and boron-containing layer on a substrate comprising:

positioning a substrate within a process chamber; and

forming a titanium layer comprising boron on at least a portion of the substrate by sequentially chemisorbing monolayers of a titanium-containing compound and a boron-containing compound on the substrate during an atomic layer deposition process wherein the titanium layer comprising boron is formed at a temperature of less than about 500°

C.

10. The method of claim 9, wherein the titanium-containing compound is titanium tetrachioride.

11. The method of claim 10, wherein the boron-containing compound is diborane.

12. The method of claim 9, wherein the substrate is exposed to a purge gas following chemisorption of each monolayer.

13. The method of claim 12, wherein the purge gas comprises a gas selected from the group consisting of hydrogen, helium, argon, and mixtures thereof.

14. The method of claim 9, wherein the titanium layer comprising boride is formed at a temperature of less than about 300°

C.

15. A method for depositing a material on a substrate, comprising:

placing a substrate within a process chamber

introducing a boron-containing compound into the process chamber;

chemisorbing at least a portion of the boron-containing compound on the substrate at conditions sufficient to form a boron-containing layer;

purging the process chamber with a purge gas;

introducing a metal-containing compound into the process chamber;

reacting a portion of the metal-containing compound with the boron-containing layer at conditions sufficient to form a metal boride-containing layer, wherein the metal boride-containing layer is formed at a temperature of less than about 500°

C.; and

purging the process chamber with the purge gas.

16. The method of claim 15, wherein the boron-containing compound is a borane compound.

17. The method of claim 16, wherein the borane compound is diborane.

18. The method of claim 17, wherein the metal boride-containing layer is formed at a temperature of less than about 400°

C.

19. The method of claim 16, wherein the purge gas comprises a gas selected from the group consisting of hydrogen, helium, argon, and mixtures thereof.

20. The method of claim 15, wherein the metal-containing compound is titanium tetrachloride.

21. The method of claim 15, wherein the metal boride-containing layer is formed at a temperature of less than about 300°

C.

22. A method for depositing a material on a substrate, comprising:

placing a substrate within a process chamber;

introducing a metal-containing compound into the process chamber;

chemisorbing at least a portion of the metal-containing compound on the substrate at conditions sufficient to form a metal-containing layer;

purging the process chamber with a purge gas;

introducing a boron-containing compound into the process chamber;

reacting a portion of the boron-containing compound with the metal-containing layer at conditions sufficient to form a metal boride-containing layer wherein the metal boride-containing layer is formed at a temperature of less than about 500°

C.; and

purging the process chamber with the purge gas.

23. The method of claim 22, wherein the boron-containing compound is a borane compound.

24. The method of claim 23, wherein the borane compound is diborane.

25. The method of claim 24, wherein the metal boride-containing layer is formed at a temperature of less than about 400°

C.

26. The method of claim 24, wherein the purge gas comprises a gas selected from the group consisting of hydrogen, helium, argon, and mixtures thereof.

27. The method of claim 22, wherein the metal-containing compound is titanium tetrachloride.

28. The method of claim 22, wherein the metal boride-containing layer is formed at a temperature of less than about 300°

C.