Wide dynamic range operation for CMOS sensor with freeze-frame shutter
First Claim
1. A method of obtaining an image signal using a solid state sensor, the method comprising:
- collecting a short image signal during a first time period;
sampling the short image signal after the first time period;
collecting a long image signal during a second time period;
sampling the long image signal after the second time period; and
combining the short image signal and the long image signal in a memory in the sensor to create a total image signal.
3 Assignments
0 Petitions
Accused Products
Abstract
Wide dynamic range operation is used to write a signal in a freeze-frame pixel into the memory twice, first after short integration and then after long integration. The wide dynamic range operation allows the intra-scene dynamic range of images to be extended by combining the image taken with a short exposure time with the image taken with a long exposure time. A freeze-frame pixel is based on voltage sharing between the photodetector PD and the analog memory. Thus, with wide dynamic range operation, the resulting voltage in the memory may be a linear superposition of the two signals representing a bright and a dark image after two operations of sampling.
-
Citations
15 Claims
-
1. A method of obtaining an image signal using a solid state sensor, the method comprising:
-
collecting a short image signal during a first time period; sampling the short image signal after the first time period; collecting a long image signal during a second time period; sampling the long image signal after the second time period; and combining the short image signal and the long image signal in a memory in the sensor to create a total image signal. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
-
-
10. A pixel sensor comprising:
-
a photodetector having a first memory element; a second memory element; and a plurality of switches including; a first switch constructed to connect the photodetector to a reset voltage source; a second switch constructed to connect the photodetector to second memory element for permitting transfer of a first and a second image signal collected in the photodetector during a respective first and second collection time period; and a third switch for connecting the second memory element to a reset voltage source, wherein the third switch is different than either the first or the second switch, and wherein the second memory element is constructed such that it is able to combine the first image signal and the second image signal to create a total image signal. - View Dependent Claims (11, 12, 13)
-
-
14. A method of operating an image sensor comprising:
-
resetting a capacitive structure by activating a first switch by connecting the capacitor to a reset voltage source; resetting a photodetector of the image sensor by activating a second switch; integrating charge at the photodetector during a first integration period to generate a first image signal; transferring the first image signal from the photodetector to the capacitive structure by activating a third switch; integrating charge at the photodetector during a second integration period to generate a second image signal; transferring the second image signal from the photodetector to the capacitive structure by activating the third switch; and creating a total image signal by combining the first and the second image signals in the capacitive structure. - View Dependent Claims (15)
-
Specification