Heat treatment jig for silicon semiconductor substrate

• US 7,210,925 B2
• Filed: 01/24/2005
• Issued: 05/01/2007
• Est. Priority Date: 06/21/2004
• Status: Active Grant

• Current Assignee: Sumitomo Mitsubishi Silicon Corporation (Sumco Corporation)
• Original Assignee: Sumitomo Mitsubishi Silicon Corporation (Sumco Corporation)
• Inventors: Adachi, Naoshi
• Primary Examiner(s): Wilson; Gregory A.
• Application Number:
  US11/039,968
• Publication Number:
  US 20050282101A1
• Time in Patent Office: 827 Days
• Field of Search: 432/253, 432/258, 432/81, 432/5, 211/41.18, 219/443.1, 118/725, 118/729
• US Class Current: 432/253
• CPC Class Codes: F27D 5/0037 Supports specially adapted for semi-conductors
• CPC Class Codes: H01L 21/67303 Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
• CPC Class Codes: H01L 21/67306 characterized by a material, a roughness, a coating or the like
• CPC Class Codes: H01L 21/67309 characterized by the substrate support
• CPC Class Codes: H01L 21/6732 Vertical carrier comprising wall type elements whereby the substrates are horizontally supported, e.g. comprising sidewalls
• CPC Class Codes: H01L 21/67323 characterized by a material, a roughness, a coating or the like

Abstract

A heat treatment jig for supporting silicon semiconductor substrates by contacting, being loaded onto a heat treatment boat in a vertical heat treatment furnace, comprises; the configuration of a ring or a disc structure with the wall thickness between 1.5 and 6.0 mm; the deflection displacement of 100 μm or less at contact region in loaded condition; the outer diameter which is 65% or more of the diameter of said substrate; and the surface roughness (Ra) of between 1.0 and 100 μm at the contact region. The use of said jig enables to effectively retard the slip generation and to avoid the growth hindrance of thermally oxidized film at the back surface of said substrate, diminishing the surface steps causing the defocus in photolithography step in device fabrication process, thereby enabling to maintain high quality of silicon semiconductor substrates and to substantially enhance the device yield.

Claims

1. A heat treatment jig which comes into contact with silicon semiconductor substrates to be supported, wherein said jig is loaded onto a heat treatment boat in a vertical heat treatment furnace, comprising;

a configuration of a ring structure or a solid disc structure both with the wall thickness of not less than 1.5 mm but not greater than 6.0 mm;

a deflection displacement of 100 μ

m or less at the contact region with said silicon semiconductor substrate when loaded in said heat treatment boat;

an outer diameter which is not less than 65% of the diameter of relevant silicon semiconductor substrate to be supported; and

a surface roughness (Ra) of not less than 1.0 μ

m but not greater than 100 μ

m at the region to contact with said silicon semiconductor substrates.

2. A heat treatment jig for silicon semiconductor substrates according to claim 1, wherein said jig has the configuration of a ring structure and a ring width of the ring structure is not less than 0.5 mm.

3. A heat treatment jig for silicon semiconductor substrates according to claim 2, comprising slits disposed with predetermined spacing at the region to contact with said silicon semiconductor substrates to be supported.

4. A heat treatment jig for silicon semiconductor substrates according to claim 2, comprising through-wall holes evenly disposed at the region to contact with said silicon semiconductor substrates to be supported.

5. A heat treatment jig for silicon semiconductor substrates according to claim 2, comprising the contact region, which contact with said silicon semiconductor substrates to be supported, made of any one out of a silicon material, a silicon material deposited by a silicon carbide film, and a silicon carbide material.

6. A heat treatment jig for silicon semiconductor substrates according to claim 1, wherein a recessed bed is formed at the center of said jig in case that said jig has the configuration of a solid disc structure.

7. A heat treatment jig for silicon semiconductor substrates according to claim 6, comprising slits disposed with predetermined spacing at the region to contact with said silicon semiconductor substrates to be supported.

8. A heat treatment jig for silicon semiconductor substrates according to claim 6, comprising through-wall holes evenly disposed at the region to contact with said silicon semiconductor substrates to be supported.

9. A heat treatment jig for silicon semiconductor substrates according to claim 6, comprising the contact region, which contact with said silicon semiconductor substrates to be supported, made of any one out of a silicon material, a silicon material deposited by a silicon carbide film, and a silicon carbide material.

10. A heat treatment jig for silicon semiconductor substrates according to claim 1, wherein a protruded figuration is formed at the region to contact with said silicon semiconductor substrates to be supported in case that said jig has the configuration of a solid disc structure.

11. A heat treatment jig for silicon semiconductor substrates according to claim 10, comprising slits disposed with predetermined spacing at the region to contact with said silicon semiconductor substrates to be supported.

12. A heat treatment jig for silicon semiconductor substrates according to claim 10, comprising through-wall holes evenly disposed at the region to contact with said silicon semiconductor substrates to be supported.

13. A heat treatment jig for silicon semiconductor substrates according to claim 10, comprising the contact region, which contact with said silicon semiconductor substrates to be supported, made of any one out of a silicon material, a silicon material deposited by a silicon carbide film, and a silicon carbide material.

14. A heat treatment jig for silicon semiconductor substrates according to claim 1, comprising slits disposed with predetermined spacing at the region to contact with said silicon semiconductor substrates to be supported.

15. A heat treatment jig for silicon semiconductor substrates according to claim 14, comprising the contact region, which contact with said silicon semiconductor substrates to be supported, made of any one out of a silicon material, a silicon material deposited by a silicon carbide film, and a silicon carbide material.

16. A heat treatment jig for silicon semiconductor substrates according to claim 1, comprising through-wall holes evenly disposed at the region to contact with said silicon semiconductor substrates to be supported.

17. A heat treatment jig for silicon semiconductor substrates according to claim 1, comprising the contact region, which contact with said silicon semiconductor substrates to be supported, made of any one out of a silicon material, a silicon material deposited by a silicon carbide film, and a silicon carbide material.