Smart conditioner rinse station

• US 7,210,981 B2
• Filed: 11/14/2005
• Issued: 05/01/2007
• Est. Priority Date: 05/26/2005
• Status: Expired due to Fees

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Yilmaz, Alpay, Karuppiah, Lakshmanan
• Primary Examiner(s): Rose; Robert A.
• Application Number:
  US11/273,766
• Publication Number:
  US 20060270322A1
• Time in Patent Office: 533 Days
• Field of Search: 451/5, 451 8- 11, 451/41, 451/56, 451/72, 451/443, 451/444
• US Class Current: 451/8
• CPC Class Codes: B24B 53/017 Devices or means for dressing, cleaning or otherwise conditioning lapping tools
• CPC Class Codes: H01L 21/67051 using mainly spraying means, e.g. nozzles
• CPC Class Codes: H01L 21/67092 Apparatus for mechanical treatment or grinding or cutting, see the relevant groups in subclasses B24B or B28D
• CPC Class Codes: H01L 21/67253 Process monitoring, e.g. flow or thickness monitoring

Abstract

A method and apparatus for monitoring polishing pad conditioning mechanisms is provided. In one embodiment, a semiconductor substrate polishing system includes a rinse station, a polishing surface, a conditioning element, and a conditioning mechanism. The conditioning mechanism selectively positions the conditioning element over the polishing surface and over the rinse station. At least one sensor is provided and is configured to detect a first position and a second position of the conditioning element when disposed over the rinse station.

Claims

1. A semiconductor substrate polishing system, comprising:

a polishing surface;

a conditioning element;

a conditioning mechanism for selectively positioning the conditioning element over the polishing surface; and

at least one sensor positioned to sense an attribute of the conditioning mechanism, wherein the attribute is indicative of performance of the conditioning element, and the at least one sensor is disposed in a rinse station.

2. The system of claim 1, wherein the at least one sensor is configured to detect a first position and a vertically offset second position of the conditioning element.

3. The system of claim 1, wherein the rinse station is laterally disposed from the polishing surface, and the conditioning mechanism is further configured to selectively position the conditioning element proximate the rinse station.

4. The system of claim 3, wherein the rinse station further comprises:

a rinse nozzle configured to spray a fluid on the conditioning element.

5. The system of claim 1, wherein the at least one sensor further comprises:

a first sensor configured to detect a first position of the conditioning element; and

a second sensor configured to detect a second position of the conditioning element.

6. The system of claim 1, wherein the at least one sensor is configured to detect rotation of the conditioning element.

7. The system of claim 1, wherein the at least one sensor is configured to detect downforce of the conditioning element.

8. The system of claim 1, wherein the at least one sensor is configured to provide a metric indicative of a conditioning surface of the conditioning element.

9. The system of claim 8, wherein the metric indicative of the conditioning surface is at least one of cut-rate, cleanliness, conditioning element wear or damage.

10. The system of claim 4, wherein the at least one sensor is configured to provide a metric indicative of a fluid flow through the rinse nozzle.

11. The system of claim 1 further comprising:

a controller coupled to the at least one sensor and containing instructions for characterizing health of the conditioning element.

12. A semiconductor substrate polishing system having a polishing surface, comprising:

a conditioning mechanism movable between a conditioning position disposed over the polishing surface and a non-conditioning position to the side of the polishing surface, the conditioning mechanism having a conditioning element for conditioning the polishing surface; and

a station disposed laterally from the polishing surface and beneath the non-conditioning position of the conditioning element, the station comprising;

a body;

a first sensor coupled to the body and configured to detect a first position of the conditioning element; and

a second sensor coupled to the body and configured to detect a second position of the conditioning element.

13. The system of claim 12 further comprising:

a nozzle disposed in the station and arranged to direct a fluid to a bottom surface of the conditioning element.

14. The system of claim 13 further comprising:

a third sensor configured to provide a metric indicative of a fluid flow through the nozzle.

15. The system of claim 13 further comprising:

a third sensor configured to provide a metric indicative of downforce of the conditioning element.

16. The system of claim 13 further comprising:

a third sensor configured to provide a metric indicative of rotation of the conditioning element.

17. A rinse station for a conditioning mechanism, comprising:

a body configured to engage with a conditioning element of the conditioning mechanism;

a rinse nozzle disposed in the body and configured to spray a fluid on the conditioning element when the conditioning element is engaged with the rinse station; and

at least one sensor coupled to the body and configured to detect a performance attribute of the conditioning element.

18. The rinse station of claim 17, wherein the at least one sensor further comprises at least one of a force sensor, a flow detection sensor, a cut-rate sensor, a rotation sensor, or a sensor suitable for providing an image of the conditioning element.

19. The rinse station of claim 17, wherein the at least one sensor further comprises:

a first sensor configured to detect a first position of the conditioning element; and

a second sensor configured to detect a second position of the conditioning element.

20. A semiconductor substrate polishing system having a polishing surface, comprising:

a conditioning mechanism movable between a conditioning position disposed over the polishing surface and a non-conditioning position to a side of the polishing surface, the conditioning mechanism having a conditioning element for conditioning the polishing surface;

a rinse station disposed laterally from the polishing surface and beneath the non-conditioning position of the conditioning element, the rinse station comprising;

a body;

a rinse arm having a nozzle configured to spray a fluid on the conditioning element;

a first sensor coupled to the body and configured to detect a first position of the conditioning element; and

a second sensor coupled to the body and configured to detect a second position of the conditioning element; and

a controller coupled to the first sensor and the second sensor, the controller containing instructions to characterize the motion of the conditioning element.

21. A method for characterizing a component of a conditioning mechanism, comprising:

actuating a conditioning element of the conditioning mechanism to move between a first position and a second position; and

analyzing an actuation time required to move the conditioning element between the first position and the second position.

22. The method of claim 21, wherein the analyzing step further comprises:

comparing the actuation time to a predetermined time.

23. The method of claim 21, wherein the analyzing step further comprises:

determining, from trends or deviations from a historical database of actuation times, a need to service the conditioning mechanism.

24. A method for characterizing a component of a conditioning mechanism, comprising:

interfacing a conditioning mechanism disposed in a non-conditioning position with one or more sensors, wherein the one or more sensors are positioned in a rinse station disposed approximate the conditioning mechanism;

obtaining a metric indicative of conditioning mechanism performance from the one or more sensors; and

determining if the metric of performance is within a process window.

25. The method of claim 24, wherein the obtaining the metric indicative of conditioning mechanism performance further comprises detecting a rotation of the conditioning mechanism.

26. The method of claim 24, wherein the obtaining the metric indicative of conditioning mechanism performance further comprises detecting a flow of a cleaning fluid into the conditioning mechanism.

27. The method of claim 24, wherein the obtaining the metric indicative of conditioning mechanism performance further comprises detecting a downforce of the conditioning mechanism.

28. The method of claim 24, wherein the obtaining the metric indicative of conditioning mechanism performance further comprises detecting a cut-rate of the conditioning mechanism.

29. The method of claim 24, wherein the obtaining the metric indicative of conditioning mechanism performance further comprises evaluating a conditioning surface of a conditioning element of the conditioning mechanism.

30. A semiconductor substrate polishing system, comprising:

a polishing surface;

a conditioning element;

a conditioning mechanism for selectively positioning the conditioning element over the polishing surface; and

at least one sensor positioned to sense an attribute of the conditioning mechanism, wherein the at least one sensor is configured to detect a first position and a vertically offset second position of the conditioning element.

31. A semiconductor substrate polishing system, comprising:

a polishing surface;

a conditioning element;

a conditioning mechanism for selectively positioning the conditioning element over the polishing surface;

at least one sensor positioned to sense an attribute of the conditioning mechanism;

a rinse station laterally disposed from the polishing surface, the conditioning mechanism further configured to selectively position the conditioning element proximate the rinse station,

wherein the rinse station further comprises a rinse nozzle configured to spray a fluid on the conditioning element and the at least one sensor is configured to provide a metric indicative of a fluid flow through the rinse nozzle.