Pulsed nucleation deposition of tungsten layers
First Claim
1. A method for depositing a tungsten nucleation layer on a substrate within a process chamber, comprising:
- (a) providing a flow of a gas mixture comprising a tungsten-containing precursor and a reducing gas into a process chamber to deposit a tungsten nucleation layer on a substrate;
(b) removing reaction by-products generated during step (a) from the process chamber;
(c) providing a flow of the reducing gas into the process chamber to react with residual tungsten-containing precursor in the process chamber and deposit tungsten on the substrate;
(d) removing reaction by-products generated during step (c) from the process chamber; and
(e) repeating steps (a)–
(d).
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Abstract
A method of forming a tungsten nucleation layer using a sequential deposition process. The tungsten nucleation layer is formed by reacting pulses of a tungsten-containing precursor and a reducing gas in a process chamber to deposit tungsten on the substrate. Thereafter, reaction by-products generated from the tungsten deposition are removed from the process chamber. After the reaction by-products are removed from the process chamber, a flow of the reducing gas is provided to the process chamber to react with residual tungsten-containing precursor remaining therein. Such a deposition process forms tungsten nucleation layers having good step coverage. The sequential deposition process of reacting pulses of the tungsten-containing precursor and the reducing gas, removing reaction by-products, and than providing a flow of the reducing gas to the process chamber may be repeated until a desired thickness for the tungsten nucleation layer is formed.
355 Citations
25 Claims
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1. A method for depositing a tungsten nucleation layer on a substrate within a process chamber, comprising:
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(a) providing a flow of a gas mixture comprising a tungsten-containing precursor and a reducing gas into a process chamber to deposit a tungsten nucleation layer on a substrate; (b) removing reaction by-products generated during step (a) from the process chamber; (c) providing a flow of the reducing gas into the process chamber to react with residual tungsten-containing precursor in the process chamber and deposit tungsten on the substrate; (d) removing reaction by-products generated during step (c) from the process chamber; and (e) repeating steps (a)–
(d). - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method for depositing a tungsten nucleation layer on a substrate within a process chamber, comprising:
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(a) providing a flow of a gas mixture comprising a tungsten-containing precursor and a reducing gas into a process chamber for about 0.1 seconds to about 10 seconds to deposit a tungsten nucleation layer on a substrate; (b) removing reaction by-products generated during step (a) by providing a purge gas into the process chamber and evacuating both the purge gas and the reaction by-products therefrom; (c) providing a flow of the reducing gas into the process chamber for up to about 10 seconds to react with residual tungsten-containing precursor in the process chamber and deposit tungsten on the substrate; (d) removing reaction by-products generated during step (c) by providing a purge gas into the process chamber and evacuating both the purge gas and the reaction by-products therefrom; and (e) repeating steps (a)–
(d) until a tungsten nucleation layer thickness of up to about 500 Å
is deposited. - View Dependent Claims (13, 14, 15, 16, 17, 18)
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19. A method for depositing a tungsten nucleation layer on a substrate within a process chamber, comprising:
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(a) providing a flow of a gas mixture comprising tungsten hexafluoride and silane into a process chamber for about 0.1 seconds to about 10 seconds to deposit a tungsten nucleation layer on a substrate; (b) removing reaction by-products generated during step (a) by providing a purge gas into the process chamber and evacuating both the purge gas and the reaction by-products therefrom; (c) providing a flow of silane into the process chamber for up to about 10 seconds to react with residual tungsten hexafluoride in the process chamber and deposit tungsten on the substrate; (d) removing reaction by-products generated during step (c) by providing a purge gas into the process chamber and evacuating both the purge gas and the reaction by-products therefrom; and (e) repeating steps (a)–
(d) until a tungsten nucleation layer thickness of up to about 500 Å
is deposited. - View Dependent Claims (20, 21, 22, 23)
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24. A method for depositing a tungsten nucleation layer on a substrate within a process chamber, comprising:
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exposing a substrate to a gas mixture containing a tungsten precursor and a reducing gas for depositing a tungsten nucleation layer for about 0.1 seconds to about 10 seconds within a process chamber during a deposition step; exposing the process chamber to a first purge step that includes providing a purge gas into the process chamber and evacuating the process chamber; exposing the substrate to diborane or silane during a soak step; exposing the process chamber to a second purge step that includes providing the purge gas into the process chamber and evacuating the process chamber; and repeating the deposition step and the first purge step until the tungsten nucleation layer is formed with a predetermined thickness.
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25. A method for depositing a tungsten nucleation layer on a substrate within a process chamber, comprising:
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exposing a substrate to a gas mixture containing a tungsten precursor and a reducing gas for about 0.1 seconds to about 10 seconds within a process chamber during a deposition step; exposing the process chamber to a purge step that includes providing a purge gas into the process chamber and evacuating the process chamber; repeating the deposition step and the purge step until a tungsten nucleation layer is formed with a predetermined thickness; and depositing a tungsten bulk layer on the tungsten nucleation layer during a second vapor deposition process.
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Specification