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Process and arrangement for the selective metallization of 3D structures

  • US 7,211,504 B2
  • Filed: 08/29/2003
  • Issued: 05/01/2007
  • Est. Priority Date: 09/02/2002
  • Status: Expired due to Fees
First Claim
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1. A process for metallization of 3D structures of raised portions of circuits on a wafer that are raised relative to the wafer surface in a direction normal to the wafer surface for subsequent electrical connection to a carrier element, the process comprising the steps of:

  • providing an electrolyte with a fixed surface, contacting only said 3D raised circuit portions that are raised relative to the wafer surface in a direction normal to the wafer surface with said fixed surface of said electrolyte, andapplying current between said 3D raised circuit portions that are raised relative to the wafer surface in a direction normal to the wafer surface and said electrolyte to electrochemically metallize said 3D raised circuit portions selectively.

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  • 4 Assignments
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