Process and arrangement for the selective metallization of 3D structures
First Claim
1. A process for metallization of 3D structures of raised portions of circuits on a wafer that are raised relative to the wafer surface in a direction normal to the wafer surface for subsequent electrical connection to a carrier element, the process comprising the steps of:
- providing an electrolyte with a fixed surface, contacting only said 3D raised circuit portions that are raised relative to the wafer surface in a direction normal to the wafer surface with said fixed surface of said electrolyte, andapplying current between said 3D raised circuit portions that are raised relative to the wafer surface in a direction normal to the wafer surface and said electrolyte to electrochemically metallize said 3D raised circuit portions selectively.
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Accused Products
Abstract
A process is provided for the selective metallization of 3D structures, particularly for the selective gold-plating of 3D contact structures on wafers, such as contact bumps, which are electrically connected to a bond pad on the wafer via a three-dimensional, mechanically flexible structure in the form of a redistribution layer, for subsequent electrical connection to a carrier element, e.g., a printed circuit board. The process is intended to considerably simplify the process sequence. The metallization of the previously prepared 3D structures on the wafer is carried out electrochemically, under current or potential control, by the structures being partially immersed in an electrolyte with a fixed surface. The electrolyte can be covered with a membrane which is permeable to the corresponding ions, or alternatively a gel electrolyte may be used.
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Citations
10 Claims
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1. A process for metallization of 3D structures of raised portions of circuits on a wafer that are raised relative to the wafer surface in a direction normal to the wafer surface for subsequent electrical connection to a carrier element, the process comprising the steps of:
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providing an electrolyte with a fixed surface, contacting only said 3D raised circuit portions that are raised relative to the wafer surface in a direction normal to the wafer surface with said fixed surface of said electrolyte, and applying current between said 3D raised circuit portions that are raised relative to the wafer surface in a direction normal to the wafer surface and said electrolyte to electrochemically metallize said 3D raised circuit portions selectively. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 10)
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9. A process for metallization of 3D structures of raised portions of circuits on a wafer that are raised relative to the wafer surface in a direction normal to the wafer surface for subsequent electrical connection to a carrier element, the process comprising the steps of:
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providing an electrolyte with a fixed surface, contacting only said 3D raised circuit portions that are raised relative to the wafer surface in a direction normal to the wafer surface with said fixed surface of said electrolyte, and applying current between said 3D raised circuit portions that are raised relative to the wafer surface in a direction normal to the wafer surface and said electrolyte to electrochemically metallize said 3D raised circuit portions selectively.
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Specification