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Method for enhancing the nucleation and morphology of ruthenium films on dielectric substrates using amine containing compounds

  • US 7,211,509 B1
  • Filed: 06/14/2004
  • Issued: 05/01/2007
  • Est. Priority Date: 06/14/2004
  • Status: Active Grant
First Claim
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1. A method of depositing a ruthenium metal layer on a dielectric substrate, the method comprising:

  • (a) exposing the dielectric substrate to a metal-amine complex; and

    (b) exposing the substrate to a ruthenium precursor and an optional co-reactant, whereby ruthenium nucleation on the dielectric surface is facilitated by the metal-amine complex or a metal-nitride derivative thereof.

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