Method for enhancing the nucleation and morphology of ruthenium films on dielectric substrates using amine containing compounds
First Claim
Patent Images
1. A method of depositing a ruthenium metal layer on a dielectric substrate, the method comprising:
- (a) exposing the dielectric substrate to a metal-amine complex; and
(b) exposing the substrate to a ruthenium precursor and an optional co-reactant, whereby ruthenium nucleation on the dielectric surface is facilitated by the metal-amine complex or a metal-nitride derivative thereof.
1 Assignment
0 Petitions
Accused Products
Abstract
Methods for depositing a ruthenium metal layer on a dielectric substrate are provided. The methods involve, for instance, exposing the dielectric substrate to an amine-containing compound, followed by exposing the substrate to a ruthenium precursor and an optional co-reactant such that the amine-containing compound facilitates the nucleation on the dielectric surface.
79 Citations
24 Claims
-
1. A method of depositing a ruthenium metal layer on a dielectric substrate, the method comprising:
-
(a) exposing the dielectric substrate to a metal-amine complex; and (b) exposing the substrate to a ruthenium precursor and an optional co-reactant, whereby ruthenium nucleation on the dielectric surface is facilitated by the metal-amine complex or a metal-nitride derivative thereof. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24)
-
Specification