Method of forming insulating layer in semiconductor device

• US 7,211,524 B2
• Filed: 12/05/2002
• Issued: 05/01/2007
• Est. Priority Date: 05/17/2002
• Status: Expired due to Fees

• Current Assignee: Hynix Semiconductor Incorporated (SK Hynix Inc.)
• Original Assignee: Hynix Semiconductor Incorporated (SK Hynix Inc.)
• Inventors: Ryu, Choon Kun, Kim, Tae Kyung
• Primary Examiner(s): Toledo; Fernando L.
• Application Number:
  US10/310,143
• Publication Number:
  US 20030216027A1
• Time in Patent Office: 1,608 Days
• Field of Search: 438/778, 438/786, 438/788, 257/E21.277
• US Class Current: 438/778
• CPC Class Codes: C23C 16/401 containing silicon
• CPC Class Codes: C23C 16/515 using pulsed discharges
• CPC Class Codes: C23C 16/56 After-treatment
• CPC Class Codes: H01L 21/02126 the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
• CPC Class Codes: H01L 21/02203 the layer being porous
• CPC Class Codes: H01L 21/02211 the compound being a silane, e.g. disilane, methylsilane or chlorosilane
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
• CPC Class Codes: H01L 21/31633 Deposition of carbon doped silicon oxide, e.g. SiOC
• CPC Class Codes: H01L 21/31695 Deposition of porous oxides or porous glassy oxides or oxide based porous glass

Abstract

The present invention relates to a method of forming an insulating film in a semiconductor device. After a mixed gas of alkyl silane gas and N₂O gas is supplied into the deposition equipment, a radio frequency power including a short pulse wave for causing incomplete reaction upon a gas phase reaction is applied to generate nano particle. The nano particle is then reacted to oxygen radical to form the insulating film including a plurality of nano voids. A low-dielectric insulating film that can be applied to the nano technology even in the existing LECVD equipment is formed.

Claims

1. A method of forming an insulating film in a semiconductor device, comprising the steps of:

mounting the semiconductor substrate in which a lower structure is formed into the deposition equipment;

supplying a source gas containing silicon component and a reaction gas containing oxygen component into the deposition equipment;

applying radio frequency powers which are mixture of a first radio frequency power having a short pulse wave generated from a first RF device with a second radio frequency power having a background pulse wave generated from a second RE device;

generating incomplete gas phase reaction during the time when the first radio frequency power is applied, so that an insulating film including nano particles are deposited; and

oxidizing the nano particles during the time when the first radio frequency power is not applied, so that nano voids are formed within the insulating film, and

wherein the first radio frequency power has low amplitude and the second radio frequency power has high amplitude.

2. The method as claimed in claim 1, further comprising the step of after the semiconductor substrate is mounted on to the deposition equipment, controlling an internal pressure of the deposition equipment to be a deposition pressure while injecting insert gas into the deposition equipment before the source gas and the reaction gas are supplied.

3. The method as claimed in claim 1, wherein the source gas includes alkyl silane gas including tri-methylsilane (SiH(CH₃)₃) gas or tetra-methylsilane (SiH(CH₃)₄) gas.

4. The method as claimed in claim 3, wherein the flow rate of supplying alkyl silane gas is 200 through 1000 sccm.

5. The method as claimed in claim 1, wherein N₂O gas is used as the reaction gas and wherein the flow rate of supplying the reaction gas is 1000 through 5000 sccm.

6. The method as claimed in claim 1, wherein the size and distribution of the nano particles are controlled according to a period of the first radio frequency power.

7. The method as claimed in claim 1, wherein the size of the nano particles is controlled according to a pulse width of the first radio frequency power.

8. The method as claimed in claim 1, wherein the degree that the gas phase reaction is formed by incomplete reaction is controlled according to a amplitude of the first radio frequency power.

9. The method as claimed in claim 1, wherein the first radio frequency power is 100 through 300 W and the second radio frequency power is 500 through 2000 W.

10. The method as claimed in claim 1, wherein the nano particles are made of SiCxHy.

11. The method as claimed in claim 1, wherein the insulating film is made of SiOCH.

12. A method of forming an insulating film in a semiconductor device, comprising the steps of:

mounting the semiconductor substrate in which a lower structure is formed into the deposition equipment;

supplying a source gas containing silicon component and a reaction gas containing oxygen component into the deposition equipment;

depositing the insulating film by using plasma wave RF;

applying a first radio frequency power having a short pulse wave RF generated from a first RF device with a second radio frequency power having a background wave RF generated from a second RF device to form nano particles within the insulating film; and

applying the second radio frequency power only to form nano voids within the insulating film, and

wherein the first radio frequency powers is periodically iteratively applied, the step of forming the nano particle and the step of forming nano void are iteratively performed.

13. The method as claimed in claim 12, wherein the source gas includes alkyl silane gas including tri-methylsilane (SiH(CH₃)₃) gas or tetra-methylsilane (SiH(CH₃)₄) gas.

14. The method as claimed in claim 12, wherein in the nano particles are made by incomplete gas phase reaction and the nano voids are made by oxidizing the nano particles due to a oxygen radical.

15. The method as claimed in claim 12, wherein the short pulse wave RF has low amplitude and the background wave RF has high amplitude.

16. The method as claimed in claim 12, wherein size and distribution of the nano particles are controlled according to a period of the short pulse wave RF.

17. The method as claimed in claim 12, wherein the size of the nano particles are controlled according to a pulse width of the short pulse wave RF and the size of the nano particles are in proportion to the pulse width of the short pulse wave RF.

18. The method as claimed in claim 16, wherein if the period of the short pulse wave RF is increased, the size of the nano particles is increased and if the period of the short pulse wave RF is reduced, the size of the nano particles is reduced.