Semiconductor light-emitting element and manufacturing method thereof
First Claim
1. A semiconductor light-emitting element in which electrodes are formed on a main surface from which light is taken out and on a main surface on an opposite side thereto in a semiconductor substrate, and a roughened surface region whose surface is roughened is formed on at least the main surface around the electrode formed on the main surface from which the light is taken out, whereina non-roughened surface region obtained by preventing surface roughening is secured in a peripheral portion of the electrode formed on the main surface from which the light is taken out or in peripheral portions of the electrode formed on the main surface from which the light is taken out and the electrode formed on the main surface on the opposite side thereto.
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Accused Products
Abstract
An improvement in electrode reliability is realized by preventing over-etching on a peripheral lower portion of an electrode while maintaining the flow of steps of roughening a surface after forming the electrode on a semiconductor substrate. After a P-side electrode 4 is formed on a main surface 3a of a semiconductor substrate 3, a surface of the P-side electrode 4 is selectively covered with a protective film 12, after the semiconductor substrate 3 is cut into chips, the surface is roughened from above the protective film 12, the main surface 3a around the P-side electrode 4 and a side surface are roughened with a non-chemical treatment region 10 which is a non-roughened surface region being left in a peripheral portion of the P-side electrode 4 covered with the protective film 12, and thereafter the protective film 12 is removed.
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Citations
2 Claims
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1. A semiconductor light-emitting element in which electrodes are formed on a main surface from which light is taken out and on a main surface on an opposite side thereto in a semiconductor substrate, and a roughened surface region whose surface is roughened is formed on at least the main surface around the electrode formed on the main surface from which the light is taken out, wherein
a non-roughened surface region obtained by preventing surface roughening is secured in a peripheral portion of the electrode formed on the main surface from which the light is taken out or in peripheral portions of the electrode formed on the main surface from which the light is taken out and the electrode formed on the main surface on the opposite side thereto.
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2. A semiconductor light-emitting element, comprising:
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a semiconductor substrate including a PN junction formed by a first semiconductor region having one conductive type of a P type and an N type and a second semiconductor region having the other conductive type; a first electrode formed on a main surface in the first semiconductor region of said semiconductor substrate; and a second electrode formed on a main surface in the second semiconductor region of said semiconductor substrate, wherein a main surface side in the first semiconductor region is constructed so that light is taken out therefrom, and a roughened surface region whose surface is roughened is formed on at least the main surface around said first electrode, and a non-roughened surface region obtained by preventing surface roughening is secured in a peripheral portion of said first electrode or in peripheral portions of said first electrode and said second electrode.
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Specification