Liquid crystal display device and fabricating method thereof

• US 7,212,255 B2
• Filed: 12/21/2001
• Issued: 05/01/2007
• Est. Priority Date: 12/30/2000
• Status: Expired due to Term

• Current Assignee: LG Display Co., Ltd.
• Original Assignee: LG Philips LCD Company Limited (LG Display Co., Ltd.)
• Inventors: Chung, Jae Young
• Primary Examiner(s): Andujar; Leonardo
• Assistant Examiner(s): Erdem; Fazli
• Application Number:
  US10/024,178
• Publication Number:
  US 20020085134A1
• Time in Patent Office: 1,957 Days
• Field of Search: 349/38, 349/43, 349/143, 349/42, 349/129, 349/144, 349/39, 349/139, 349/148, 349/44, 349/46, 349/110, 349/111
• US Class Current: 349/38
• CPC Class Codes: G02F 1/136213 Storage capacitors associated with the pixel electrode

Abstract

A liquid crystal display device and fabricating method, wherein at least two storage capacitors disposed between the gate line and the capacitor electrode making the same potential as the gate line are provided, whereby the capacitance of the entire storage capacitor is enlarged due to a parallel connection of the capacitors, so that flicker and cross talk can be reduced to improve picture quality.

Claims

1. A liquid crystal display device having a pixel electrode, comprising:

at least two storage capacitors disposed between a gate line and a capacitor electrode formed above the gate line, said gate line being connected, via a contact hole passing through said at least two storage capacitors, to the capacitor electrode, wherein the capacitor electrode is a different electrode than the pixel electrode.

2. A liquid crystal display device, comprising:

at least two storage capacitors disposed between a gate line and a capacitor electrode formed above the gate line, said gate line being connected, via one contact hole passing through said at least two storage capacitors, to the capacitor electrode; and

wherein the capacitor electrode is made from a transparent conductive material selected from the group consisting of indium-tin-oxide, indium-zinc-oxide and indium-tin-zinc-oxide.

3. A liquid crystal display device, comprising:

at least two storage capacitors disposed between a gate line and a capacitor electrode formed above the gate line, said gate line being connected, via one contact hole passing through said at least two storage capacitors, to the capacitor electrode;

a gate insulating film provided on a substrate;

a storage electrode provided on the gate insulating film to overlap the gate line; and

a protective layer provided between the storage electrode and the capacitor electrode.

8. The liquid crystal display device as claimed in claim 3, further comprising:

a gate electrode connected to the gate line;

source and drain electrodes provided on the gate insulating film; and

a pixel electrode provided on the protective layer to be electrically connected to the drain electrode.

9. The liquid crystal display device as claimed in claim 3, wherein the pixel electrode electrically contacts the storage electrode through said contact hole passing through the protective layer.

10. The liquid crystal display device as claimed in claim 8, wherein the gate insulating film has a thickness of about 4000 Å

.

11. The liquid crystal display device as claimed in claim 8, wherein the protective layer has a thickness of about 2000 Å

.

4. A liquid crystal display device, comprising:

at least two storage capacitors disposed between a gate line and a capacitor electrode formed above the gate line, said gate line being connected, via a contact hole passing through said at least two storage capacitors, to the capacitor electrode;

a gate insulating film provided on a substrate;

a storage electrode provided on the gate insulating film to overlap the gate line;

a protective layer provided between the storage electrode and the capacitor electrode;

a first storage capacitor provided between the storage electrode and the gate line with the intervening gate insulating film; and

a second storage capacitor provided between the storage electrode and the capacitor electrode with the intervening protective layer.

5. The liquid crystal display device as claimed in claim 4, wherein the first storage capacitor is connected to the second storage capacitor in parallel.

6. The liquid crystal display device as claimed in claim 4, wherein the contact hole is at least two holes spaced to each other at a length larger than the width of the storage electrode.

7. The liquid crystal display device as claimed in claim 6, wherein the capacitor electrode has a length larger than the storage electrode.

12. A method of fabricating a liquid crystal display device, comprising the steps of:

forming a gate line on a substrate;

forming a gate insulating film on the substrate;

forming a storage electrode on the gate insulating film to overlap the gate line;

forming a protective layer made of an insulating material on the gate insulating film;

defining at least two contact holes to expose the gate line; and

forming a capacitor electrode electrically contacting the gate line on the protective layer,

wherein the said least two contact holes are spaced to each other at a length larger than the width of the storage electrode.

13. The method as claimed in claim 12, wherein the capacitor electrode has a length larger than the storage electrode.

14. A method of fabricating a liquid crystal display device, comprising the steps of:

forming a gate line on a substrate;

forming a gate insulating film on the substrate;

forming a storage electrode on the gate insulating film to overlap the gate line;

forming a protective layer made of an insulating material on the gate insulating film;

defining at least two contact holes to expose the gate line; and

forming a capacitor electrode electrically contacting the gate line on the protective layer,

further comprising the steps of;

forming a gate electrode connected to the gate line on the substrate;

forming a semiconductor layer on the gate insulating film;

forming source and drain electrodes on the semiconductor layer; and

forming a pixel electrode on the protective layer.

15. The method as claimed in claim 14, wherein the pixel electrode electrically contacts the storage electrode through said contact hole passing through the protective layer.

16. The method as claimed in claim 14, wherein the gate insulating film has a thickness of about 4000 Å

.

17. The method as claimed in claim 14, wherein the protective layer has a thickness of about 2000 Å

.

18. A liquid crystal display device, comprising:

at least two storage capacitors disposed between a gate line and a capacitor electrode formed above the gate line, said gate line being directly connected, via one contact hole passing through said at least two storage capacitors, to a capacitor electrode of only one of the two storage capacitors.

19. A liquid crystal display device having an uppermost electrode, comprising:

at least two storage capacitors disposed between a gate line and a capacitor electrode formed above the gate line, said gate line being directly connected, via one contact hole passing through said at least two storage capacitors, to the capacitor electrode which is the uppermost electrode.

20. A liquid crystal display device, comprising:

at least two storage capacitors disposed vertically above one another between a gate line and a capacitor electrode formed above the gate line, said gate line being connected, via one contact hole passing through said at least two storage capacitors, to the capacitor electrode; and

wherein the capacitor electrode is made from a transparent conductive material selected from the group consisting of indium-tin-oxide, indium-zinc-oxide and indium-tin-zinc-oxide.