Mask and its manufacturing method, exposure, and device fabrication method

• US 7,214,453 B2
• Filed: 02/20/2004
• Issued: 05/08/2007
• Est. Priority Date: 02/21/2003
• Status: Active Grant

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Saitoh, Kenji, Yamazoe, Kenji, Suzuki, Akiyoshi
• Primary Examiner(s): ROSASCO, STEPHEN D
• Application Number:
  US10/783,218
• Publication Number:
  US 20040166422A1
• Time in Patent Office: 1,173 Days
• Field of Search: 430/5, 430/30, 430/394, 716 19- 21
• US Class Current: 430/5
• CPC Class Codes: G03F 1/36 Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
• CPC Class Codes: G03F 7/70433 Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors

Abstract

A mask arranges a predetermined pattern and an auxiliary pattern smaller than the predetermined pattern so that where a virtual lattice is assumed which has a lattice point located at a center of the predetermined pattern, a center of the auxiliary pattern is offset from the lattice point of the virtual lattice.

Claims

1. A mask comprising plural contact hole patterns, and plural auxiliary patterns, each auxiliary pattern being smaller than each contact hole pattern,

wherein the plural auxiliary patterns include a first auxiliary pattern and plural second auxiliary patterns, centers of the contact hole patterns and a center of the first auxiliary pattern being at regular periods in a line, the plural second auxiliary patterns each having a center that is offset from the line and equally distant from two adjacent centers among the contact hole patterns and the first auxiliary pattern, and

wherein the plural second auxiliary patterns are arranged at both sides of the line.

2. An exposure method comprising the step of illuminating a mask according to claim 1 by using light that enables the plural contact hole patterns to resolve and prevents the plural auxiliary patterns from resolving, and exposing an object using the light from the mask.

3. An exposure method according to claim 2, wherein the light that enables the plural contact hole patterns to resolve and prevents the plural auxiliary patterns from resolving form an effective light source having a dark center portion.

4. A device fabricating method comprising the steps of:

exposing an object by using an exposure method according to claim 2; and

developing the object that has been exposed.

5. A mask according to claim 1, wherein centers of the plural auxiliary patterns are aligned with a line parallel to the line, and are arranged on the parallel line at the same as a period of the plural contact hole patterns.

6. A mask according to claim 1, wherein centers of the contact hole patterns and a center of the first auxiliary pattern being at regular periods in a line, the plural second auxiliary patterns having centers that is offset from the line, and equally distant from both the center of the first auxiliary pattern and the center of the contact hole pattern that is closest to the second auxiliary pattern.

7. A mask according to claim 1, wherein a distance between centers of the plural second auxiliary patterns and the line is a period of the plural contact hole patterns.

8. A mask designing method for designing a mask that includes plural contact hole patterns, and plural auxiliary patterns having a first auxiliary pattern and plural second auxiliary patterns, each auxiliary pattern being smaller than each contact hole pattern, the mask enabling plural contact hole patterns to resolve and while preventing the plural auxiliary patterns from resolving, said mask designing method comprising the steps of:

arranging a first auxiliary pattern so that centers of the contact hole patterns and a center of the first auxiliary pattern being at regular periods in a line; and

arranging plural second auxiliary patterns each having a center that is offset from the line, and equally distant from two adjacent centers among the first auxiliary pattern and the contact hole patterns, and the plural second auxiliary patterns are located at both sides of the line.

9. A mask designing method according to claim 8, wherein centers of the plural auxiliary patterns are aligned with a line parallel to the line, and are arranged on the parallel line at the same as a period of the plural contact hole patterns.

10. A mask designing method according to claim 8, wherein centers of the contact hole patterns and a center of the first auxiliary pattern being at regular periods in a line, the plural second auxiliary patterns having a center that is offset from the line, and equally distant from both the center of the first auxiliary pattern and the center of the contact hole pattern that is closest to the second auxiliary pattern.