Method for removing patterned layer from lower layer through reflow

• US 7,214,473 B2
• Filed: 02/09/2004
• Issued: 05/08/2007
• Est. Priority Date: 01/04/2002
• Status: Expired due to Fees

• Current Assignee: Vista Peak Ventures LLC (Dominion Harbor Enterprises, LLC)
• Original Assignee: NEC LCD Technologies Limited (NEC Corporation)
• Inventors: Kido, Shusaku
• Primary Examiner(s): Duda, Kathleen
• Application Number:
  US10/773,272
• Publication Number:
  US 20040157171A1
• Time in Patent Office: 1,184 Days
• Field of Search: 430/311, 430/322, 430327-330
• US Class Current: 430/322
• CPC Class Codes: G03F 7/422 using liquids only G03F7/421 takes precedence
• CPC Class Codes: G03F 7/427 using plasma means only

Abstract

A photo-resist mask of organic compound is stripped off after the pattern transfer to a layer thereunder, wherein the photo-resist mask is firstly exposed to vapor of organic solvent for reducing the thickness through a reflow, and, thereafter, the photo-resist mask is ashed in an oxygen plasma, whereby the dry ashing is completed within a short time period by virtue of the reduction of thickness.

Claims

1. A process for treating a substrate comprising:

forming a patterned organic layer on said substrate; and

reflowing said patterned organic layer at a substrate temperature from 15 degrees to 40 degrees centigrade while being exposed to an organic solvent-carrying gas.

2. The process as set forth in claim 1, wherein a deformed organic layer is formed from said patterned organic layer in said reflowing, and said deformed organic layer is thinner than said patterned organic layer.

3. The process as set forth in claim 2, wherein said deformed organic layer has a thickness that is equal to or less than one of one-fifth, one-tenth and one-half of the thickness of said patterned organic layer.

4. The process as set forth in claim 3, wherein a chemical solution is penetrated into said patterned organic layer so as to dissolve part of said patterned organic layer, thereby reflowing said patterned organic layer.

5. The process as set forth in claim 3, wherein a chemical solution is penetrated into said patterned organic layer so as to dissolve part of said patterned organic layer for the reflowing, and heat is applied to said patterned organic layer so as to reflow part of said patterned organic layer.

6. The process as set forth in claim 3, wherein said patterned organic layer comprises a resist layer.

7. The process as set forth in claim 2, wherein a chemical solution is penetrated into said patterned organic layer so as to dissolve part of said organic layer, thereby reflowing said patterned organic layer.

8. The process as set forth in claim 2, wherein a chemical solution is penetrated into said patterned organic layer so as to dissolve part of said patterned organic layer for the reflowing, and heat is applied to said patterned organic layer so as to reflow part of said patterned organic layer.

9. The process as set forth in claim 2, wherein said patterned organic layer comprises a resist layer.

10. The process as set forth in claim 1, wherein a chemical solution is penetrated into said patterned organic layer so as to dissolve part of said organic layer, thereby reflowing said patterned organic layer.

11. The process as set forth in claim 10, wherein said patterned organic layer is exposed to a gaseous mixture of organic solution comprising an organic solvent for making said chemical solution penetrate into said patterned organic layer.

12. The process as set forth in claim 11, wherein a temperature of said gaseous mixture ranges from 15 degrees to 40 degrees centigrade.

13. The process as set forth in claim 12, wherein a deformed organic layer produced from said patterned organic layer is thinner than said patterned organic layer after the reflowing through the dissolution.

14. The process as set forth in claim 12, wherein said patterned organic layer comprises a resist layer.

15. The process as set forth in claim 11, wherein a deformed organic layer produced from said patterned organic layer is thinner than said patterned organic layer after the reflowing through the dissolution.

16. The process as set forth in claim 11, wherein said chemical solution or said organic solution including said organic solvent comprises an organic solution comprising an organic solvent selected from the group consisting of alcohols expressed by a general formula of R—

OH, alkoxyalcohols, ethers expressed by a general formula of R—

O—

R, Ar—

O—

R. and Ar—

O—

Ar, esters, ketones, glycols, alkylene glycols, and glycol ethers where R is an alkyl group or a substituted alkyl group and Ar comprises a phenyl group or an aromatic ring other than said phenyl group.

17. The process as set forth in claim 11, wherein said patterned organic layer comprises a resist layer.

18. The process asset forth in claim 10, wherein a deformed organic layer produced from said patterned organic layer is thinner than said patterned organic layer after the reflowing through the dissolution.

19. The process as set forth in claim 18, wherein said patterned organic layer comprises a resist layer.

20. The process as set forth in claim 10, wherein said chemical solution or said organic solution including said organic solvent comprises an organic solution comprising an organic solvent selected from the group consisting of alcohols expressed by a general formula of R—

OH, alkoxyalcohols, ethers expressed by a general formula of R—

O—

R, Ar—

O—

R and Ar—

O—

Ar, esters, ketones, glycol s, alkylene glycols, and glycol ethers where R is an alkyl group or a substituted alkyl group and Ar comprises a phenyl group or an aromatic ring other than said phenyl group.

21. The process as set forth in claim 20, wherein said patterned organic layer comprises a resist layer.

22. The process as set forth in claim 10, wherein said patterned organic layer comprises a resist layer.

23. The process as set forth in claim 1, wherein a chemical solution is penetrated into said patterned organic layer so as dissolve part of said patterned organic layer for the reflowing, and heat is applied to said patterned organic layer so as to reflow part of said patterned organic layer.

24. The process as set forth in claim 23, wherein the process further comprises exposing said patterned organic layer to a high-temperature ambient at 50–

300 degrees centigrade for applying the heat.

25. The process as set forth in claim 24, wherein a deformed organic layer produced from said patterned organic layer is thinner than said patterned organic layer after the reflowing through the dissolution.

26. The process as set forth in claim 24, wherein said patterned organic layer comprises a resist layer.

27. The process as set forth in claim 23, wherein said patterned organic layer is exposed to a gaseous mixture of organic solution comprising an organic solvent for making said chemical solution penetrate into said patterned organic layer.

28. The process as set forth in claim 23, wherein a deformed organic layer produced from said patterned organic layer is thinner than said patterned organic layer after the reflowing through the dissolution.

29. The process as set forth in claim 23, wherein said chemical solution or said organic solution including said organic solvent comprises an organic solution comprising an organic solvent selected from the group consisting of alcohols expressed by a general formula of R—

OH, ailcoxyalcohols, ethers expressed by a general formula of R—

O—

R, Ar—

O—

R and Ar—

O—

Ar, esters, ketones, glycols, alkylene glycols, and glycol ethers where R is an alkyl group or a substituted alkyl group and Ar comprises a phenyl group or an aromatic ring other than said phenyl group.

30. The process as set forth in claim 23, wherein said patterned organic layer comprises a resist layer.

31. The process as set forth in claim 1, wherein said patterned organic layer comprises a resist layer.