Method of manufacturing a semiconductor device that includes patterning sub-islands
First Claim
1. A method of manufacturing a semiconductor device, comprising:
- forming a semiconductor film over a substrate;
patterning the semiconductor film to form a sub-island and a marker;
determining, from pattern information of the sub-island, a width in a direction perpendicular to a scanning direction of a laser beam spot and a scanning path of the beam spot so as to include the sub-island;
controlling the width in the direction perpendicular to the scanning direction of the beam spot by using a slit;
running the beam spot along the scanning path with the marker as the reference to enhance crystallinity of the sub-island wherein the sub-island is included in an area irradiated in the width by the running of the beam spot; and
patterning the sub-island with enhanced crystallinity to form an island.
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Accused Products
Abstract
A method of manufacturing a semiconductor device is provided which uses a laser crystallization method capable of increasing substrate processing efficiency. An island-like semiconductor film including one or more islands is formed by patterning (sub-island). The sub-island is then irradiated with laser light to improve its crystallinity, and thereafter patterned to form an island. From pattern information of a sub-island, a laser light scanning path on a substrate is determined such that at least the sub-island is irradiated with laser light. In other words, the present invention runs laser light so as to obtain at least the minimum degree of crystallization of a portion that has to be crystallized, instead of irradiating the entire substrate with laser light.
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Citations
44 Claims
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1. A method of manufacturing a semiconductor device, comprising:
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forming a semiconductor film over a substrate; patterning the semiconductor film to form a sub-island and a marker; determining, from pattern information of the sub-island, a width in a direction perpendicular to a scanning direction of a laser beam spot and a scanning path of the beam spot so as to include the sub-island; controlling the width in the direction perpendicular to the scanning direction of the beam spot by using a slit; running the beam spot along the scanning path with the marker as the reference to enhance crystallinity of the sub-island wherein the sub-island is included in an area irradiated in the width by the running of the beam spot; and patterning the sub-island with enhanced crystallinity to form an island. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method of manufacturing a semiconductor device, comprising:
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forming a semiconductor film over a substrate; patterning the semiconductor film to form a sub-island using a mask; detecting pattern information of the sub-island using a CCD; grasping a position of the substrate by checking pattern information of the mask against the pattern information of the sub-island; determining, from the pattern information of the sub-island, a width in a direction perpendicular to a scanning direction of a laser beam spot and a scanning path of the beam spot so as to include the sub-island; controlling the width in the direction perpendicular to the scanning direction of the beam spot by using a slit; running the beam spot along the scanning path with the marker as the reference to enhance crystallinity of the sub-island wherein the sub-island is included in an area irradiated in the width by the running of the beam spot; and patterning the sub-island with enhanced crystallinity to form an island. - View Dependent Claims (8, 9, 10, 11, 12)
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13. A method of manufacturing a semiconductor device, comprising:
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forming a semiconductor film over a substrate; patterning the semiconductor film to form a sub-island and a marker; determining, from pattern information of the sub-island, a width in a direction perpendicular to a scanning direction of a laser beam spot and a scanning path of the beam spot so as to include the sub-island; controlling the width in the direction perpendicular to the scanning direction of the beam spot by using a slit; running the beam spot along the scanning path with the marker as a reference to enhance crystallinity of the sub-island wherein the sub-island is included in an area irradiated in the width by the running of the beam spot; and patterning the sub-island with enhanced crystallinity to form an island, wherein, when the beam spot reaches the sub-island during running the beam spot, one point of the beam spot comes into contact with the sub-island. - View Dependent Claims (14, 15, 16, 17, 18)
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19. A method of manufacturing a semiconductor device, comprising:
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forming a semiconductor film over a substrate; patterning the semiconductor film to form a sub-island using a mask; detecting pattern information of the sub-island using a CCD; grasping a position of the substrate by checking pattern information of the mask against the pattern information of the sub-island; determining, from the pattern information of the sub-island, a width in a direction perpendicular to a scanning direction of a laser beam spot and a scanning path of the beam spot so as to include the sub-island; controlling the width in the direction perpendicular to the scanning direction of the beam spot by using a slit; running the beam spot along the scanning path with the marker as the reference to enhance crystallinity of the sub-island wherein the sub-island is included in an area irradiated in the width by the running of the beam spot; and patterning the sub-island with enhanced crystallinity to form an island, wherein, when the beam spot reaches the sub-island during running the beam spot, one point of the beam spot comes into contact with the sub-island. - View Dependent Claims (20, 21, 22, 23, 24)
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25. A method of manufacturing a semiconductor device, comprising:
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forming a semiconductor film over a substrate; patterning the semiconductor film to form a sub-island and a marker; determining, from pattern information of the sub-island, a width in a direction perpendicular to a scanning direction of one laser beam spot and a scanning path of the one beam spot so as to include the sub-island; forming the one beam spot by using an optical system and a slit; running the one beam spot along the scanning path with a marker as a reference to enhance crystallinity of the sub-island wherein the sub-island is included in an area irradiated in the width by the running of the one beam spot; and patterning the sub-island with enhanced crystallinity to form an island, wherein the optical system makes beam spots of plural laser lights partially overlap each other to form the one beam spot, wherein the plural laser lights are outputted from plural laser oscillation apparatuses, and wherein the slit reduces a width of the one beam spot in a direction perpendicular to the scanning direction of the one beam spot. - View Dependent Claims (26, 27, 28, 29, 30, 31, 32, 33)
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34. A method of manufacturing a semiconductor device according to clam 25, wherein the width of the slit is variable.
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35. A method of manufacturing a semiconductor device, comprising:
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forming a semiconductor film over a substrate; patterning the semiconductor film to form a sub-island and a marker, determining, from pattern information of the sub-island, a width in a direction perpendicular to a scanning direction of one laser beam spot and a scanning path of the one beam spot so as to include the sub-island; forming the one beam spot by using an optical system and a slit; running the one beam spot alone the scanning path with a marker as a reference to enhance crystallinity of the sub-island wherein the sub-island is included in an area irradiated in the width by the running of the one beam spot; and patterning the sub-island with enhanced crystallinity to form an island, wherein the optical system makes beam spots of plural laser lights partially overlap each other so that centers of the plural laser lights draw a straight line to form the one beam spot, wherein the plural laser lights are outputted from plural laser oscillation apparatuses, and wherein the slit reduces a width of the one beam spot in a direction perpendicular to the scanning direction of the one beam spot. - View Dependent Claims (36, 37, 38, 39, 40, 41, 42, 43, 44)
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Specification