Method of forming thin film pattern, method of manufacturing device, electro-optical apparatus and electronic apparatus

• US 7,214,617 B2
• Filed: 03/18/2004
• Issued: 05/08/2007
• Est. Priority Date: 04/01/2003
• Status: Expired due to Fees

• Current Assignee: Seiko Epson Corporation (Seiko Group)
• Original Assignee: Seiko Epson Corporation (Seiko Group)
• Inventors: Hirai, Toshimitsu
• Primary Examiner(s): WILCZEWSKI, MARY A
• Application Number:
  US10/803,027
• Publication Number:
  US 20050191781A1
• Time in Patent Office: 1,146 Days
• Field of Search: 438/30, 438/676, 438/677, 438/675, 438/99
• US Class Current: 438/676
• CPC Class Codes: H01L 21/288 from a liquid, e.g. electrolytic deposition
• CPC Class Codes: H01L 21/76802 by forming openings in dielectrics
• CPC Class Codes: H01L 21/76814 post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
• CPC Class Codes: H01L 21/76826 by contacting the layer with gases, liquids or plasmas
• CPC Class Codes: H01L 21/76829 characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
• CPC Class Codes: H01L 21/76877 Filling of holes, grooves or trenches, e.g. vias, with conductive material
• CPC Class Codes: H01L 27/1292 using liquid deposition, e.g. printing
• CPC Class Codes: H05K 2201/09909 Special local insulating pattern, e.g. as dam around component
• CPC Class Codes: H05K 2203/013 Inkjet printing, e.g. for printing insulating material or resist
• CPC Class Codes: H05K 2203/1173 Differences in wettability, e.g. hydrophilic or hydrophobic areas
• CPC Class Codes: H05K 3/125 by ink-jet printing
• CPC Class Codes: H05K 3/1258 by using a substrate provided with a shape pattern, e.g. grooves, banks, resist pattern
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/122 Pixel-defining structures or layers, e.g. banks
• CPC Class Codes: H10K 71/135 using ink-jet printing

Abstract

A method of forming a thin film pattern by placing a functional liquid on a substrate, includes a bank formation step of forming banks in accordance with the thin film pattern on the substrate, a residue processing step of removing residue between the banks, and a material placement step of placing the functional liquid between the banks removed the residue.

Claims

1. A method of forming a thin film pattern by placing a functional liquid on a substrate, comprising:

a bank formation step of forming banks in accordance with the thin film pattern on the substrate;

a residue processing step of removing residue between the banks; and

a material placement step of placing the functional liquid between the banks removed the residue,

wherein the residue processing step comprises a photo irradiation processing step.

2. A method of forming a thin film pattern according to claim 1, wherein the residue processing step comprises a step of removing residue in bottom portions between the banks.

3. A method of forming a thin film pattern according to claim 1, further comprising a repellency processing step of imparting repellency to the banks after the residue processing step.

4. A method of forming a thin film pattern according to claim 3, further comprising a step of removing residue from bottom portions between the banks after the repellency processing step of imparting repellency to the banks.

5. A method of forming a thin film pattern according to claim 4, wherein the residue processing step that is performed after the repellency processing step comprises a step of removing residue from bottom portions between the banks.

6. A method of forming a thin film pattern according to claim 4, wherein the residue processing step that is performed after the repellency processing step comprises a photo irradiation processing step.

7. A method of forming a thin film pattern according to claim 4, wherein the residue processing step that is performed after the repellency processing step comprises a plasma processing step that uses a predetermined processing gas.

8. A method of forming a thin film pattern according to claim 4, wherein the residue processing step that is performed after the repellency processing step comprises a plasma processing step that uses a predetermined processing gas and a photo irradiation processing step.

9. A method of forming a thin film pattern according to claim 4, wherein the residue processing step performs etching using acid.

10. A method of forming a thin film pattern according to claim 1, wherein the residue processing step is performed once again after the material placement step.

11. A method of forming a thin film pattern according to claim 1, wherein the functional liquid exhibits electroconductivity after undergoing heat processing or light processing.

12. A method of forming a thin film pattern according to claim 1, wherein the functional liquid contains electroconductive fine particles.

13. A method of manufacturing an active matrix substrate comprising:

a first step of forming a gate wire on a substrate;

a second step of forming a gate insulating film on the gate wire;

a third step of laminating a semiconductor layer via the gate insulating film;

a fourth step of forming a source electrode and drain electrode on the gate insulating film;

a fifth step of placing a non-conductive material on the source electrode and the drain electrode;

a sixth step of forming a pixel electrode after the placement of the insulating material,

wherein at least one of the first, fourth, and sixth steps further comprising;

a bank forming step of forming banks to correspond to a formation pattern;

a residue processing step of removing residue between the banks; and

a material placement step of placing a functional material between the banks removed the residue by being discharged using a droplet discharge apparatus,

wherein the residue processing step comprises a photo irradiation processing step.

14. A method of manufacturing an active matrix substrate according to claim 13, further comprising a repellency processing step of imparting repellency to the banks after the residue processing step.

15. A method of manufacturing an active matrix substrate according to claim 14, further comprising removing residue from bottom portions between the banks after the repellency processing step of imparting repellency to the banks.

16. A method of manufacturing an active matrix substrate according to claim 14, wherein the residue processing step that is performed after the repellency processing step comprises a step of removing residue from bottom portions between the banks.

17. A method of manufacturing an active matrix substrate according to claim 14, wherein the residue processing step that is performed after the repellency processing step comprises a photo irradiation processing step.

18. A method of manufacturing an active matrix substrate according to claim 14, wherein the residue processing step that is performed after the repellency processing step comprises a plasma processing step that uses a predetermined processing gas.

19. A method of manufacturing an active matrix substrate according to claim 14, wherein the residue processing step that is performed after the repellency processing step comprises a plasma processing step that uses a predetermined processing gas and a photo irradiation processing step.

20. A method of manufacturing an active matrix substrate according to claim 14, wherein the residue processing step performs etching using acid.

21. A method of manufacturing an active matrix substrate according to claim 13, wherein the residue processing step is performed once again after the material placement step.