Conductive element with lateral oxidation barrier
First Claim
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1. A surface emitting laser having a light emitting surface, said laser comprising:
- a substrate;
a plurality of semiconductor layers formed on said substrate;
one of said semiconductor layers comprising an active layer having an active region therein;
a first reflector located on one side of said active layer and a second reflector located on the opposite side of said active layer, at least one of said reflectors allowing a partial transmission of light energy therethrough;
one of said semiconductor layers being a current controlling layer, said current controlling layer being penetrated by a plurality of hollow cavities;
an aperture region in said current controlling layer which controls current flowing through said active region, said aperture region being defined by a conductive region in said current controlling layer bordered by non-conductive regions in said current controlling layer, and wherein one of said non-conductive regions surrounds one of said plurality of hollow cavities; and
first and second electrodes located on said laser device to enable biasing of said active region.
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Abstract
A conductive element with a lateral oxidation barrier is provided for the control of lateral oxidation processes in semiconductor devices such as lasers, vertical cavity surface emitting lasers and light emitting diodes. The oxidation barrier is formed through modification of one or more layers which initially were receptive to oxidation. The quality of material directly below the oxidation barrier may be preserved. Related applications include the formation of vertical cavity surface emitting lasers on non-GaAs substrates and on GaAs substrates.
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Citations
14 Claims
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1. A surface emitting laser having a light emitting surface, said laser comprising:
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a substrate; a plurality of semiconductor layers formed on said substrate; one of said semiconductor layers comprising an active layer having an active region therein; a first reflector located on one side of said active layer and a second reflector located on the opposite side of said active layer, at least one of said reflectors allowing a partial transmission of light energy therethrough; one of said semiconductor layers being a current controlling layer, said current controlling layer being penetrated by a plurality of hollow cavities; an aperture region in said current controlling layer which controls current flowing through said active region, said aperture region being defined by a conductive region in said current controlling layer bordered by non-conductive regions in said current controlling layer, and wherein one of said non-conductive regions surrounds one of said plurality of hollow cavities; and first and second electrodes located on said laser device to enable biasing of said active region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A surface emitting laser having a light emitting surface, said laser comprising:
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a substrate; a plurality of semiconductor layers formed on said substrate; one of said semiconductor layers comprising an active layer having an active region therein; a first reflector located on one side of said active layer and a second reflector located on the opposite side of said active layer, at least one of said reflectors allowing a partial transmission of light energy therethrough; one of said semiconductor layers being a current controlling layer, said current controlling layer being penetrated by a plurality of hollow cavities, each of said hollow cavities having a substantially rectangular opening; an aperture region in said current controlling layer which controls current flowing through said active region, said aperture region being defined by a conductive region in said current controlling layer bordered by non-conductive regions in said current controlling layer, and wherein one of said non-conductive regions surrounds one of said hollow cavities; and first and second electrodes located on said laser device to enable biasing of said active region. - View Dependent Claims (10, 11, 12, 13)
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14. A surface emitting laser having a light emitting surface, said laser comprising:
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a substrate; a plurality of semiconductor layers formed on said substrate; one of said semiconductor layers comprising an active layer having an active region therein; a first reflector located on one side of said active layer and a second reflector located on the opposite side of said active layer, at least one of said reflectors allowing a partial transmission of light energy therethrough; one of said semiconductor layers being a current controlling layer, said current controlling layer being penetrated by two hollow cavities, each of said hollow cavities having a substantially rectangular opening; an aperture region in said current controlling layer which controls current flowing through said active region, said aperture region being defined by a conductive region in said current controlling layer bordered by non-conductive regions in said current controlling layer, and wherein one of said non-conductive regions surrounds one of said hollow cavities; and first and second electrodes located on said laser device to enable biasing of said active region.
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Specification