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Method of manufacturing a semiconductor device and semiconductor manufacturing apparatus

  • US 7,217,952 B2
  • Filed: 09/09/2005
  • Issued: 05/15/2007
  • Est. Priority Date: 05/18/2001
  • Status: Expired due to Fees
First Claim
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1. A semiconductor device comprising:

  • a polycrystalline semiconductor film as an active layer, said active layer including large tilt angle grain boundaries and small tilt angle grain boundaries,wherein n large tilt angle grain boundaries and m small tilt angle grain boundaries are cut across, when an electric current flows in the active layer,wherein the number n is equal to or less than 1, per 1 μ

    m of an electric current path length,wherein the number m is equal to or greater than 1, per 1 μ

    m of the electric current path length, andwherein the small tilt angle grain boundaries have differences in orientation less than 15°

    in the grain boundaries;

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