Low temperature process and structures for polycide power MOSFET with ultra-shallow source

• US 7,217,976 B2
• Filed: 02/08/2005
• Issued: 05/15/2007
• Est. Priority Date: 02/09/2004
• Status: Active Grant

• Current Assignee: Infineon Technologies Americas Corp. (Infineon Technologies AG)
• Original Assignee: International Rectifier Corporation (Infineon Technologies AG)
• Inventors: Spring, Kyle
• Primary Examiner(s): Soward; Ida M.
• Application Number:
  US11/053,617
• Publication Number:
  US 20050173760A1
• Time in Patent Office: 826 Days
• Field of Search: 257324-334, 257341-342, 257/401
• US Class Current: 257/341
• CPC Class Codes: H01L 29/4236 within a trench, e.g. trench gate electrode, groove gate electrode
• CPC Class Codes: H01L 29/456 on silicon
• CPC Class Codes: H01L 29/4933 with a silicide layer contacting the silicon layer, e.g. Polycide gate with a barrier layer between the silicide and silicon layers H01L29/4941
• CPC Class Codes: H01L 29/66727 with a step of recessing the source electrode
• CPC Class Codes: H01L 29/66734 with a step of recessing the gate electrode, e.g. to form a trench gate electrode
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236

Abstract

A trench type power semiconductor device includes proud gate electrodes that extend out of the trenches and above the surface of the semiconductor body. These proud gate electrodes allow for making ultra-shallow source regions within the semiconductor body using, for example, a low temperature source drive. In addition, a method for manufacturing the trench type power semiconductor device includes a low temperature process flow once the gate electrodes are formed.

Claims

1. A power semiconductor device, comprising:

a semiconductor body of a first conductivity type;

a plurality of trenches along a surface of said semiconductor body and extending to a first depth of said semiconductor body;

a gate oxide layer lining surfaces of each of said plurality of trenches;

a gate electrode within each of said plurality of trenches, each gate electrode including a free end extending above the surface of said semiconductor body; and

a plurality of ultra-shallow source regions of said first conductivity type within said semiconductor body and extending to a second depth of said semiconductor body, wherein said second depth is approximately equal to or less than a thickness of said gate oxide layer.

2. The power semiconductor device of claim 1, wherein said device has a gate voltage withstand rating of 12V and said second depth is approximately equal to or less than 300A.

3. The power semiconductor device of claim 1, further comprising:

a channel region of a second conductivity type in said semiconductor body such that said channel region extends from the surface of said semiconductor body to a third depth of said semiconductor body, said third depth being less than said first depth.

4. The power semiconductor device of claim 1, further comprising a silicide or salicide contact at the free end of each gate electrode.

5. The power semiconductor device of claim 1, wherein each of said plurality of ultra-shallow source regions extends from an edge of a trench to a length along the surface of said semiconductor body;

and

wherein said length of each source region is configured to reduce a distance between adjacent trenches, and wherein said second depth of each source region is configured to reduce said first depth of said plurality of trenches and to thereby reduce a gate charge of said gates.

6. The power semiconductor device of claim 1, further comprising a plurality of contact regions of a second conductivity type within said semiconductor body, each of said plurality of contact regions being adjacent to source regions.

7. The power semiconductor device of claim 6, further comprising a plurality of silicide or salicide contacts each of which shorts one of said plurality of contact regions to its adjacent source regions.

8. The power semiconductor device of claim 7, further comprising a silicide or salicide contact at the free end of each gate electrode.