×

Process for producing metal thin films by ALD

  • US 7,220,451 B2
  • Filed: 08/10/2004
  • Issued: 05/22/2007
  • Est. Priority Date: 01/29/2002
  • Status: Expired due to Term
First Claim
Patent Images

1. A method of forming a dual damascene structure comprising depositing a seed layer by an atomic layer deposition process, the seed layer comprising at least one noble metal, and wherein the atomic layer deposition process comprises:

  • providing sequential and alternating vapor phase pulses of a noble metal source chemical and an oxygen source chemical.

View all claims
  • 0 Assignments
Timeline View
Assignment View
    ×
    ×