Growth of reduced dislocation density non-polar gallium nitride by hydride vapor phase epitaxy
First Claim
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1. A method of performing a lateral epitaxial overgrowth of a planar, non-polar, a-plane gallium nitride (GaN) film, comprising:
- (a) patterning a mask deposited on a substrate; and
(b) performing a lateral epitaxial overgrowth of the planar, non polar, a-plane GaN film off the substrate using hydride vapor phase epitaxy, wherein the planar, non polar, a-plane GaN film nucleates only on portions of the substrate not covered by the patterned mask, the planar, non polar, a-plane GaN film grows vertically through openings in the patterned mask, and the planar, non polar, a-plane GaN film then spreads laterally above the patterned mask and across the substrate'"'"'s surface.
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Abstract
Lateral epitaxial overgrowth (LEO) of non-polar a-plane gallium nitride (GaN) films by hydride vapor phase epitaxy (HVPE) results in significantly reduced defect density.
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Citations
21 Claims
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1. A method of performing a lateral epitaxial overgrowth of a planar, non-polar, a-plane gallium nitride (GaN) film, comprising:
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(a) patterning a mask deposited on a substrate; and (b) performing a lateral epitaxial overgrowth of the planar, non polar, a-plane GaN film off the substrate using hydride vapor phase epitaxy, wherein the planar, non polar, a-plane GaN film nucleates only on portions of the substrate not covered by the patterned mask, the planar, non polar, a-plane GaN film grows vertically through openings in the patterned mask, and the planar, non polar, a-plane GaN film then spreads laterally above the patterned mask and across the substrate'"'"'s surface. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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20. A lateral epitaxial overgrowth of a planar, non-polar, a-plane gallium nitride (GaN) film off a substrate, wherein the lateral epitaxial overgrowth is created using a process comprising:
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(a) patterning a dielectric mask deposited on a substrate; and (b) performing a lateral epitaxial overgrowth of the planar, non polar, a-plane GaN film off the substrate using hydride vapor phase epitaxy, wherein the planar, non polar, a-plane GaN film nucleates only on portions of the substrate exposed by the patterned dielectric mask, the planar, non polar, a-plane GaN film grows vertically through openings in the patterned dielectric mask, and the planar, non polar, a-plane GaN film then spreads laterally above the patterned dielectric mask and across the substrate'"'"'s surface. - View Dependent Claims (21)
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Specification