Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method

• US 7,220,660 B2
• Filed: 09/13/2004
• Issued: 05/22/2007
• Est. Priority Date: 03/21/2000
• Status: Expired due to Fees

• Current Assignee: Trustees Of Columbia University In The City Of New York (Columbia University)
• Original Assignee: Trustees Of Columbia University In The City Of New York (Columbia University)
• Inventors: Sposili, Robert S., Im, James S., Crowder, Mark A.
• Primary Examiner(s): Lebentritt; Michael
• Assistant Examiner(s): Isaac; Stanetta
• Application Number:
  US10/939,271
• Publication Number:
  US 20050032249A1
• Time in Patent Office: 981 Days
• Field of Search: 438/487, 438/942, 257/E21.133
• US Class Current: 438/487
• CPC Class Codes: B23K 2101/40 Semiconductor devices
• CPC Class Codes: B23K 26/06 Shaping the laser beam, e.g. by masks or multi-focusing
• CPC Class Codes: B23K 26/0622 by shaping pulses
• CPC Class Codes: B23K 26/066 by using masks
• CPC Class Codes: B23K 26/0853 Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane
• CPC Class Codes: B23K 26/3576 Diminishing rugosity, e.g. grinding; Polishing; Smoothing
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02678 Beam shaping, e.g. using a mask
• CPC Class Codes: H01L 21/02686 Pulsed laser beam
• CPC Class Codes: H01L 21/02691 Scanning of a beam
• CPC Class Codes: H01L 21/302 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
• CPC Class Codes: H01L 21/32115 Planarisation
• CPC Class Codes: H01L 21/67253 Process monitoring, e.g. flow or thickness monitoring
• CPC Class Codes: Y10S 438/942 Masking

Abstract

Systems and methods for reducing a surface roughness of a polycrystalline or single crystal thin film produced by the sequential lateral solidification process are disclosed. In one arrangement, the system includes an excimer laser (110) for generating a plurality of excimer laser pulses of a predetermined fluence, an energy density modulator (120) for controllably modulating the fluence of the excimer laser pulses such that the fluence is below that which is required to completely melt the thin film, a beam homoginizer (144) for homoginizing modulated laser pulses in a predetermined plane, a sample stage (170) for receiving homoginized laser pulses to effect melting of portions of the polycrystalline or single crystal thin film corresponding to the laser pulses, translating means for controllably translating a relative position of the sample stage (170) with respect to the laser pulses, and a computer (110) for coordinating the excimer pulse generation and fluence modulation with the relative positions of the sample stage (170) to thereby process the polycrystalline or single crystal thin film by sequential translation of the sample stage (170) relative to the laser pulses.

Claims

1. A method for processing an amorphous silicon thin film sample into a single or polycrystalline silicon thin film having a reduced surface roughness, comprising the steps of:

(a) forming a rigid cap layer on said amorphous silicon thin film sample having sufficient thickness to withstand contractions and expansions during melting and resolidification of said silicon thin film;

(b) generating a sequence of excimer laser pulses;

(c) controllably modulating each excimer laser pulse in said sequence to a predetermined fluence;

(d) homogenizing each modulated laser pulse in said sequence in a predetermined plane;

(e) masking portions of each homogenized fluence controlled laser pulse in said sequence to generate a sequence of fluence controlled pulses of patterned beamlets;

(f) irradiating said amorphous silicon thin film sample with said sequence of fluence controlled patterned beamlets to effect melting of portions thereof corresponding to each fluence controlled patterned beamlet pulse in said sequence of pulses of patterned beamlets;

(g) controllably sequentially translating said sample relative to each of said fluence controlled pulse of patterned beamlets to thereby process said amorphous silicon thin film sample into a single or polycrystalline silicon thin film; and

(h) removing said cap layer from said single or polycrystalline silicon thin film.

2. The method of claim 1, wherein said excimer laser pulses comprise ultraviolet excimer laser pulses.

3. The method of claim 1, wherein said step of forming a rigid cap layer on said amorphous silicon thin film sample comprises forming a silicon oxide layer on said amorphous silicon thin film sample.

4. The method of claim 1, wherein said step of forming a rigid cap layer on said amorphous silicon thin film sample comprises forming a silicon oxide layer approximately 2 microns thick on said amorphous silicon thin film sample.