Copper alloys for interconnections having improved electromigration characteristics and methods of making same

• US 7,220,674 B2
• Filed: 06/01/2004
• Issued: 05/22/2007
• Est. Priority Date: 12/18/2000
• Status: Expired due to Fees

• Current Assignee: Intel Corporation
• Original Assignee: Intel Corporation
• Inventors: McGregor, Paul, Block, Carolyn, Marieb, Thomas N., Jin, Shu
• Primary Examiner(s): HOANG, QUOC DINH
• Application Number:
  US10/859,327
• Publication Number:
  US 20040219788A1
• Time in Patent Office: 1,085 Days
• Field of Search: 438658-660, 438/678, 438/687, 438/691, 438/542, 438/558, 438/561, 438/902
• US Class Current: 438/687
• CPC Class Codes: H01L 21/76843 formed in openings in a dielectric
• CPC Class Codes: H01L 21/76849 the layer being positioned on top of the main fill metal
• CPC Class Codes: H01L 21/76864 Thermal treatment
• CPC Class Codes: H01L 21/76867 characterized by methods of formation other than PVD, CVD or deposition from a liquids PVD H01L21/2855; CVD H01L21/28556; deposition from liquids H01L21/288
• CPC Class Codes: H01L 21/76877 Filling of holes, grooves or trenches, e.g. vias, with conductive material
• CPC Class Codes: H01L 23/53238 Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

Formation of copper alloy interconnect lines on integrated circuits includes introducing dopant elements into a copper layer. Copper alloy interconnect lines may be formed by providing a doping layer over a copper layer, driving dopant material into the copper layer with a high temperature step, and polishing the copper layer to form individual lines. Copper alloy interconnect lines may be formed by implanting dopants into individual lines. Copper alloy interconnect lines may be formed by providing a doped seed layer with a capping layer to prevent premature oxidation, forming an overlying copper layer, driving in the dopants, and polishing to form individual lines. In this way, electromigration resistance and adhesion characteristics may be improved by having relatively higher doping concentrations at outer portions of an interconnect line while the desired low electrical resistivity of the interconnect is maintained by keeping the interior portions of the interconnect with a substantially lower doping concentration.

Claims

1. A method of forming a Cu alloy, comprising:

depositing a seed layer on a substrate, the seed layer comprising Cu and at least one first doping element;

forming a capping layer over the seed layer, wherein the seed layer and the capping layer are formed sequentially and without exposing the seed layer to an atmosphere prior to deposition of the capping layer;

forming a layer of Cu over the capping layer;

driving the at least one doping element from the seed layer into the Cu layer;

forming a dopant layer having a second doping element over said layer of Cu and driving said second doping element into said layer of Cu.

2. The method of claim 1, wherein the seed layer and the capping layer are formed sequentially and without exposing the seed layer to an atmosphere prior to deposition of the capping layer.

3. The method of claim 1, wherein the seed layer and the capping layer are deposited in the same PVD system without breaking vacuum.

4. The method of claim 1 wherein depositing the seed layer comprises sputtering a metal alloy, the metal alloy having at least one element that diffuses in Cu at temperature less than or equal to 400°

C.

5. The method of claim 4, wherein the metal alloy is selected from the group consisting of CuSn and CuMg.

6. The method of claim 4, wherein forming the capping layer comprises sputtering Cu.

7. The method of claim 1, wherein driving the at least one doping element from the seed layer into the Cu layer comprises heating the substrate to temperature in the range of 300°

C. to 400°

C.

8. The method of claim 7, further comprising exposing at least surface of the Cu layer to an ambient that reacts with the doping element.

9. The method of claim 8, wherein the ambient comprises nitrogen.

10. The method of claim 8, wherein the ambient comprises oxygen.

11. The method of claim 1, wherein the substrate comprises a patterned dielectric layer having a copper diffusion barrier disposed of a surface thereof;

depositing the seed layer comprises a physical vapor deposition in the absence of oxygen;

forming the capping layer comprises a physical vapor deposition of Cu;

forming the Cu layer comprises electroplating; and

driving the at least one doping element from the seed layer into the Cu layer comprises heating the substrate and, concurrently therewith, exposing the Cu layer to at least one chemical that will react with the at least one doping element such that the at least one doping element is drawn to an upper portion of the Cu layer.

12. The method of claim 1 wherein said first and said second doping elements are the same.

13. The method of claim 1 wherein said first and said second doping elements are different.