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Vertical JFET limited silicon carbide power metal-oxide semiconductor field effect transistors

  • US 7,221,010 B2
  • Filed: 10/30/2003
  • Issued: 05/22/2007
  • Est. Priority Date: 12/20/2002
  • Status: Active Grant
First Claim
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1. A silicon carbide metal-oxide semiconductor field effect transistor unit cell, comprising:

  • an n-type silicon carbide drift layer;

    a first p-type silicon carbide region in close proximity to the drift layer;

    a first n-type silicon carbide region within the first p-type silicon carbide region;

    an oxide layer on the drift layer, the first p-type silicon carbide region, and the first n-type silicon carbide region; and

    an n-type silicon carbide limiting region disposed between the drift layer and the first p-type silicon carbide region, wherein the n-type limiting region comprises a first portion disposed in close proximity to a floor of the first p-type silicon carbide region and a second portion disposed in close proximity to a sidewall of the first p-type silicon carbide region, wherein the n-type limiting region has a carrier concentration that is greater than a carrier concentration of the drift layer and wherein the first portion has a carrier concentration greater than a carrier concentration of the second portion.

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