High-voltage vertical transistor with a multi-gradient drain doping profile

• US 7,221,011 B2
• Filed: 01/25/2005
• Issued: 05/22/2007
• Est. Priority Date: 09/07/2001
• Status: Expired due to Term

• Current Assignee: Power Integrations Incorporated
• Original Assignee: Power Integrations Incorporated
• Inventors: Banerjee, Sujit, Disney, Donald Ray
• Primary Examiner(s): Tran; Minhloan
• Assistant Examiner(s): LIU, BENJAMIN T
• Application Number:
  US11/042,665
• Publication Number:
  US 20050133858A1
• Time in Patent Office: 847 Days
• Field of Search: 257/488, 257491-493, 257/496, 257/327, 257/328, 257/329, 257/341, 257/342, 257/487, 257/340, 257/345, 257/E29.009, 257/E29.01, 257/E29.012, 257/E29.256
• US Class Current: 257/288
• CPC Class Codes: H01L 29/0653 adjoining the input or output region of a field-effect device, e.g. the source or drain region
• CPC Class Codes: H01L 29/0847 of field-effect transistors with insulated gate H01L29/0653 takes precedence; with a passive supplementary region between source or drain and substrate related to punch-through, capacity or isolation phenomena H01L29/1079; with LDD or DDD structure H01L29/7833; for thin film transistors H01L29/78618
• CPC Class Codes: H01L 29/0878 Impurity concentration or distribution
• CPC Class Codes: H01L 29/402 Field plates
• CPC Class Codes: H01L 29/407 Recessed field plates, e.g. trench field plates, buried field plates
• CPC Class Codes: H01L 29/41741 for vertical or pseudo-vertical devices
• CPC Class Codes: H01L 29/42368 the thickness being non-uniform
• CPC Class Codes: H01L 29/66734 with a step of recessing the gate electrode, e.g. to form a trench gate electrode
• CPC Class Codes: H01L 29/7802 Vertical DMOS transistors, i.e. VDMOS transistors
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236
• CPC Class Codes: H01L 29/7824 with a substrate comprising an insulating layer, e.g. SOI-LDMOS transistors
• CPC Class Codes: H01L 29/7825 with trench gate electrode trench gate electrodes per se H01L29/4236
• CPC Class Codes: H01L 29/7828 without inversion channel, e.g. vertical ACCUFETs, normally-on vertical MISFETs
• CPC Class Codes: Y10S 438/925 Fluid growth doping control, e.g. delta doping

Abstract

A high-voltage transistor includes first and second trenches that define a mesa in a semiconductor substrate. First and second field plate members are respectively disposed in the first and second trenches, with each of the first and second field plate members being separated from the mesa by a dielectric layer. The mesa includes a plurality of sections, each section having a substantially constant doping concentration gradient, the gradient of one section being at least 10% greater than the gradient of another section. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims. 37 CFR 1.72(b).

Claims

1. A high-voltage transistor comprising:

a drain region of a first conductivity type;

a source region of the first conductivity type;

a body region of a second conductivity type opposite to the first conductivity type, the body region adjoining the source region;

a drift region of the first conductivity type extending in a first direction from the drain region to the body region, the drift region comprising first and second sections, each disposed below the body region and each having substantially different first and second doping concentration gradients, respectively, the first doping concentration gradient being less than the second doping concentration gradient the first section being nearest the source region and the second section being nearest the drain region;

first and second field plate members respectively disposed on opposite sides of the drift region, the first and second field plate members being fully insulated from the drift region; and

an insulated gate disposed adjacent the body region.

2. A high-voltage transistor comprising:

a drain region of a first conductivity type;

a source region of the first conductivity type;

a body region of a second conductivity type opposite to the first conductivity type, the body region adjoining the source region;

a drift region of the first conductivity type extending in a first direction from the drain region to the body region, the drift region comprising first and second sections, each disposed below the body region and each having substantially different first and second doping concentration gradients, respectively the first doping concentration gradient being less than the second doping concentration;

the first section being nearest the source region and the second section being nearest the drain region,

first and second field plate members respectively disposed on opposite sides of the drift region, the first and second field plate members each being insulated from the drift region by a dielectric layer, the drift region and the dielectric layer each having a width in a second direction orthogonal to the first direction, the width of the dielectric layer being greater than the width of the drift region; and

an insulated gate disposed adjacent the body region.

3. A high-voltage transistor comprising:

a drain of a first conductivity type;

a source of the first conductivity type;

a drift region of the first conductivity type extending in a first direction from the drain to the source, and comprising first and second sections having substantially different first and second doping concentration gradients, respectively, the first doping concentration gradient having a lowest doping concentration at a point in the first section nearest the source, with the first doping concentration gradient being lower than the second doping concentration gradient; and

first and second field plate members respectively disposed on opposite sides of the drift region, each of the field plate members being insulated from the drift region by a dielectric layer.

4. The high-voltage transistor according to claim 3 wherein the first and second doping concentration gradients differ by at least 10%.

5. The high-voltage transistor according to claim 3 wherein the high-voltage transistor is fabricated on a semiconductor substrate having a planar bottom surface, the first direction being oriented perpendicular to the planar bottom surface.

6. The high-voltage transistor according to claim 3 wherein the first conductivity type comprises n-type.

7. The high-voltage transistor according to claim 3 wherein the drift region has a length oriented in the first direction and a width oriented in a second direction orthogonal to the first direction, the length being more than five times the width.

8. The high-voltage transistor according to claim 3 wherein the field plate members are oriented parallel to the drift region.

9. The high-voltage transistor according to claim 3 wherein the first section is located nearest the source region and the second section is located nearest the drain region.

10. The high-voltage transistor according to claim 9 wherein the first doping concentration gradient is less than the second doping concentration gradient.

11. A high-voltage transistor comprising:

a substrate;

first and second trenches in the substrate that define a mesa;

first and second field plate members respectively disposed in the first and second trenches, each of the first and second field plate members being separated from the mesa by a dielectric layer; and

wherein the mesa comprises a plurality of sections, each section having a substantially linear doping concentration gradient, an uppermost section having a doping concentration gradient that is at least 10% lower than a doping concentration gradient of a lowermost section.

12. The high-voltage transistor according to claim 11 wherein the plurality of sections are adjoined in a stack, with each successive section in the stack having a larger doping concentration gradient than a preceding section.

13. A high-voltage transistor comprising:

a drain of a first conductivity type;

a source of the first conductivity type;

a body region of a second conductivity type opposite to the first conductivity type, the body region adjoining the source region;

a drift region of the first conductivity type extending in a vertical direction from the drain region to the body region, the drift region comprising first, second, and third sections, the first section being nearest the body region and the third region being farthest from the body region, the first section having a substantially constant doping concentration, the second section having a first doping concentration gradient with a lowest doping concentration level nearest the first section, and the third section having a second doping concentration gradient at least 10% higher that the first doping concentration gradient;

first and second field plate members respectively disposed on opposite sides of the drift region, the first and second field plate members being fully insulated from the drift region; and

an insulated gate disposed adjacent the body region.

14. The high-voltage transistor according to claim 13 wherein the first section extends from the body region to a depth between about 1.0 μ

m to 5.0 μ

m deep.

15. The high-voltage transistor according to claim 13 wherein the first section adjoins the second section and the third section adjoins the second section.

16. The high-voltage transistor according to claim 13 wherein the drift region further comprises a fourth section that adjoins the third section, the fourth section having a third doping concentration gradient higher than the second doping concentration gradient.

17. A high-voltage transistor comprising:

a drain of a first conductivity type;

a source of the first conductivity type;

a drift region of the first conductivity type extending in a vertical direction from the drain to the source, the drift region comprising first and second sections having substantially different first and second doping concentration gradients, respectively, the first section being disposed near the source with the second section being disposed directly beneath the first section, the first section having a lowest doping concentration nearest the source and a highest doping concentration nearest the second section, the second section having a lowest doping concentration nearest the first section, the highest doping concentration of the first section being substantially equal to the lowest doping concentration of the second section, and the first doping concentration gradient being less than the second doping concentration gradient; and

first and second field plate members respectively disposed on opposite sides of the drift region, each of the field plate members being insulated from the drift region by a dielectric layer.

18. The high-voltage transistor according to claim 17 wherein the first and second doping concentration gradients are each substantially linear.

19. The high-voltage transistor according to claim 17 wherein the second doping concentration gradient is at least 10% higher that the first doping concentration gradient.

20. The high-voltage transistor according to claim 17 further comprising a body region that separates the source from the drift region.

21. The high-voltage transistor according to claim 20 further comprising a third section of the drift region that separates the body region from the first section, the third section having a constant doping concentration.

22. The high-voltage transistor according to claim 21 wherein the third section has a vertical thickness greater than 0 μ

m, but not greater than 5.0 μ

m.

23. A high-voltage transistor comprising:

a drain of a first conductivity type;

a source of the first conductivity type;

a drift region of the first conductivity type extending in a first direction from the drain to the source, and comprising first and second sections having first and second doping concentration gradients, respectively, the first section being disposed a first vertical distance below the source and having a lowest doping concentration nearest the source and a highest doping concentration farthest from the source, the second section being disposed beneath the first section and having a lowest doping concentration nearest the first section and a highest doping concentration farthest from the first section, the highest doping concentration of the first section being substantially the same as the lowest doping concentration of the second section; and

first and second field plate members respectively disposed on opposite sides of the drift region, each of the field plate members being insulated from the drift region by a dielectric layer.

24. The high-voltage transistor according to claim 23 wherein the first and second doping concentration gradients are each substantially linear.

25. The high-voltage transistor according to claim 23 wherein the second doping concentration gradient is at least 10% higher that the first doping concentration gradient.

26. The high-voltage transistor according to claim 23 further comprising a body region that separates the source from the drift region.

27. The high-voltage transistor according to claim 26 wherein the first section is disposed a second vertical distance below the body region.

28. The high-voltage transistor according to claim 27 wherein the second vertical distance is greater than 0 μ

m, but not greater than 5.0 μ

m.