BJT with ESD self protection

• US 7,221,036 B1
• Filed: 05/16/2005
• Issued: 05/22/2007
• Est. Priority Date: 05/16/2005
• Status: Active Grant

• Current Assignee: National Semiconductor Corporation (Texas Instruments, Inc.)
• Original Assignee: National Semiconductor Corporation (Texas Instruments, Inc.)
• Inventors: Vashchenko, Vladislav, Mirgorodski, Yuri, Hopper, Peter J.
• Primary Examiner(s): Smith; Zandra V.
• Assistant Examiner(s): Tran; Thanh Y.
• Application Number:
  US11/129,957
• Time in Patent Office: 736 Days
• Field of Search: 257/205, 257/273, 257355-357, 257/370, 257/378, 257/474, 257/477, 257/526, 257/539, 257/542, 257/552, 257555-558, 257/563, 257/565
• US Class Current: 257/565
• CPC Class Codes: H01L 27/0259 using bipolar transistors as protective elements
• CPC Class Codes: H01L 29/0821 Collector regions of bipolar transistors
• CPC Class Codes: H01L 29/7322 having emitter-base and base-collector junctions leaving at the same surface of the body, e.g. planar transistor

Abstract

A ballasting region is placed between the base region and the collector contact of a bipolar junction transistor to relocate a hot spot away from the collector contact of the transistor. Relocating the hot spot away from the collector contact prevents the collector contact from melting during an electrostatic discharge (ESD) pulse.

Claims

1. A circuit comprising:

a bipolar junction transistor having;

a semiconductor material of a first conductivity type;

an epitaxial material of the second conductivity type that contacts the semiconductor material, the epitaxial material having a top surface and a dopant concentration;

a base region of the first conductivity type that contacts the epitaxial material, the base region having a depth measured normal to the top surface of the epitaxial material;

an emitter region of the second conductivity type that contacts the base region, the emitter region having a dopant concentration;

a sinker down region of the second conductivity type that contacts the epitaxial material, the sinker down region having a dopant concentration; and

a ballasting region that contacts the top surface of the epitaxial material and lies between the base region and the sinker down region.

2. The circuit of claim 1 and further comprising:

a layer of isolation material formed on the epitaxial material; and

a contact formed through the layer of isolation material to make an electrical connection with the sinker down region, a lattice temperature adjacent to the contact being insufficient to melt the contact during an ESD event.

3. The circuit of claim 2 wherein the ballasting region has a second conductivity type and a depth measured normal to the top surface of the epitaxial material, the depth of the ballasting region being substantially less than the depth of the base region.

4. The circuit of claim 2 wherein the ballasting region has a first conductivity type.

5. The circuit of claim 2 wherein the ballasting region has a finger shape.

6. The circuit of claim 2 and further comprising a bipolar junction device having:

an epitaxial material of the second conductivity type that contacts the semiconductor material;

a base region of the first conductivity type that contacts the epitaxial material of the bipolar junction device;

an emitter region of the second conductivity type that contacts the base region of the bipolar junction device;

a sinker down region of the second conductivity type that contacts the epitaxial material of the bipolar junction device; and

a contact formed through the layer of isolation material to make an electrical connection with the sinker down region of the bipolar junction device.

7. The circuit of claim 6 wherein a lattice temperature adjacent to the contact of the bipolar junction device is sufficient to melt the contact during an ESD event.

8. The circuit of claim 7 wherein the ballasting region has a second conductivity type and a depth measured normal to the top surface of the epitaxial material, the depth of the ballasting region being substantially less than the depth of the base region.

9. The circuit of claim 7 wherein the ballasting region has a first conductivity type.

10. The circuit of claim 7 wherein the ballasting region has a finger shape.

11. The circuit of claim 7 wherein:

a first separation distance exists between the base region and the contact of the bipolar junction transistor, and a second separation distance exists between the base region and the contact of the bipolar junction device, the first separation distance being greater than the second separation distance.

12. The circuit of claim 11 wherein the first separation distance is substantially greater than the second separation distance.

13. The circuit of claim 11 wherein the ballasting region has a second conductivity type and a depth measured normal to the top surface of the epitaxial material, the depth of the ballasting region being substantially less than the depth of the base region.

14. The circuit of claim 11 wherein the ballasting region has a first conductivity type.

15. The circuit of claim 11 wherein the ballasting region has a finger shape.