BJT with ESD self protection
First Claim
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1. A circuit comprising:
- a bipolar junction transistor having;
a semiconductor material of a first conductivity type;
an epitaxial material of the second conductivity type that contacts the semiconductor material, the epitaxial material having a top surface and a dopant concentration;
a base region of the first conductivity type that contacts the epitaxial material, the base region having a depth measured normal to the top surface of the epitaxial material;
an emitter region of the second conductivity type that contacts the base region, the emitter region having a dopant concentration;
a sinker down region of the second conductivity type that contacts the epitaxial material, the sinker down region having a dopant concentration; and
a ballasting region that contacts the top surface of the epitaxial material and lies between the base region and the sinker down region.
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Accused Products
Abstract
A ballasting region is placed between the base region and the collector contact of a bipolar junction transistor to relocate a hot spot away from the collector contact of the transistor. Relocating the hot spot away from the collector contact prevents the collector contact from melting during an electrostatic discharge (ESD) pulse.
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Citations
15 Claims
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1. A circuit comprising:
a bipolar junction transistor having; a semiconductor material of a first conductivity type; an epitaxial material of the second conductivity type that contacts the semiconductor material, the epitaxial material having a top surface and a dopant concentration; a base region of the first conductivity type that contacts the epitaxial material, the base region having a depth measured normal to the top surface of the epitaxial material; an emitter region of the second conductivity type that contacts the base region, the emitter region having a dopant concentration; a sinker down region of the second conductivity type that contacts the epitaxial material, the sinker down region having a dopant concentration; and a ballasting region that contacts the top surface of the epitaxial material and lies between the base region and the sinker down region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
Specification