Dual band power amplifier module for wireless communication devices

• US 7,221,225 B2
• Filed: 07/02/2005
• Issued: 05/22/2007
• Est. Priority Date: 12/03/2004
• Status: Active Grant

• Current Assignee: Micro Mobio Corporation
• Original Assignee: Micro-Mobio
• Inventors: Wang, Weiping, Ichitsubo, Ikuroh, Wang, Guan-Wu
• Primary Examiner(s): Choe; Henry
• Application Number:
  US11/173,965
• Publication Number:
  US 20060119426A1
• Time in Patent Office: 689 Days
• Field of Search: 330/279, 330/129, 330/136, 330/307
• US Class Current: 330/279
• CPC Class Codes: H03F 1/0233 by using a signal derived from the output signal, e.g. bootstrapping the voltage supply
• CPC Class Codes: H03F 2200/111 the amplifier being a dual or triple band amplifier, e.g. 900 and 1800 MHz, e.g. switched or not switched, simultaneously or not
• CPC Class Codes: H03F 2200/451 the amplifier being a radio frequency amplifier
• CPC Class Codes: H03F 2200/465 Power sensing
• CPC Class Codes: H03F 3/195 in integrated circuits

Abstract

A power amplifier module for amplifying radio frequency signals includes first and second radio frequency power amplifiers each including one or more semiconductor transistors, adapted to receive an input radio frequency signal and a processed power-sensing control signal, and to output an amplified radio frequency signal; first and second power-sensing circuits each coupled to said first and second radio frequency power amplifiers and adapted to receive each amplified radio frequency signal and to output the power-sensing control signal; and control logic that receives and processes the power-sensing control signals, and outputs a processed power-sensing control signal in response to each quality or magnitude of each amplified radio frequency signal.

Claims

1. A power amplifier module for amplifying radio frequency signals, comprising:

a) one or more radio frequency power amplifiers each including one or more semiconductor transistors, adapted to receive an input radio frequency signal and a processed power-sensing control signal, and to output an amplified radio frequency signal;

b) one or more power-sensing circuits each coupled to said one or more radio frequency power amplifiers and adapted to receive each amplified radio frequency

c) a substrate wherein each side of the substrate is approximately 4 millimeters, wherein the substrate comprises a thickness of approximately 1 millimeter and wherein the substrate includes a plurality of pads positioned around the perimeter of the substrate, each pad having a pitch of about 0.65 millimeter, a width of about 0.23 millimeter, and a length of about 0.4 millimeter.

2. The power amplifier module of claim 1, comprising a control logic that receives and processes the power-sensing control signals, and outputs a processed power-sensing control signal in response to each quality or magnitude of each amplified radio frequency signal.

3. The module of claim 1 wherein the quality of the amplified radio frequency signal includes one or more of inter-modulation components of the amplified radio frequency signal.

4. The module of claim 1 wherein the magnitude of the amplified radio frequency signal includes one or more of the gain, the voltage, the current, and the power of the amplified radio frequency signal.

5. The module of claim 1 wherein the radio frequency power amplifier outputs the amplified radio frequency signal under the control of a bias signal.

6. The module of claim 5 wherein the bias signal is controlled by the power-sensing control signal.

7. The module of claim 1, wherein the impedance of the external circuit that provides the input radio frequency signal is matched by an input impedance matching circuit.

8. The module of claim 1, wherein the impedance of external circuit that receives the amplified radio frequency signal is matched by an output impedance matching circuit.

9. The module of claim 1, further comprising a substrate.

10. The module of claim 9, wherein the substrate comprises one of:

a lead frame, a low-temperature co-fired ceramic (LTCC) material, a printed circuit board.

11. A power amplifier module for amplifying radio frequency signals, comprising:

a) an electronic circuit including

i) one or more radio frequency power amplifiers each including one or more semiconductor transistors adapted to receive an input radio frequency signal and a power-sensing control signal and to output an amplified radio frequency signal;

ii) one or more power-sensing circuits coupled to said one or more radio frequency power amplifiers and each adapted to receive the amplified radio frequency signal and to output the power-sensing control signal; and

b) a substrate to support the electronic circuit; and

a central square pad side of about 2.7 millimeter, and wherein each side of the substrate is approximately 4 millimeters, wherein the substrate comprises a thickness of approximately 1 millimeter and wherein the substrate includes a plurality of pads positioned around the perimeter of the substrate, each pad having a pitch of about 0.65 millimeter, a width of about 0.23 millimeter, and a length of about 0.4 millimeter.

12. The module of claim 11 wherein the substrate comprises one of:

a lead frame, a low-temperature co-fired ceramic (LTCC) material, a printed circuit board.