Surface plasmon resonance sensor

• US 7,221,456 B2
• Filed: 11/24/2004
• Issued: 05/22/2007
• Est. Priority Date: 11/27/2003
• Status: Expired due to Fees

• Current Assignee: Aisin Seiki Co., Ltd. (Aisin Corp.)
• Original Assignee: Aisin Seiki Co., Ltd. (Aisin Corp.)
• Inventors: Shimoyama, Isao, Matsumoto, Kiyoshi, Hoshino, Kazunori, Kanai, Naritoshi
• Primary Examiner(s): STAFIRA, MICHAEL PATRICK
• Application Number:
  US10/995,368
• Publication Number:
  US 20050117158A1
• Time in Patent Office: 909 Days
• Field of Search: None
• US Class Current: 356/445
• CPC Class Codes: G01N 21/553 and using surface plasmons fluorescence excitation G01N21/648; enhanced Raman G01N21/658

Abstract

A surface plasmon resonance sensor comprises a prism having parallel surfaces, a light source provided on one surface of the prism, a detecting means provided on the same surface where the light source is provided, a metal thin film provided on the other surface of the prism, and at least one of light absorbing members provided in the prism for blocking light emitted from the light source at any angle except a predetermined angle so that the metal thin film is illuminated by the light emitted from the light source at the predetermined angle, and such light is totally reflected at the metal thin film so as to reach the detecting means.

Claims

1. A surface plasmon resonance sensor comprising:

a prism having parallel surfaces;

a light source provided on one surface of the prism;

a detecting means provided on the same surface where the light source is provided;

a metal thin film provided on the other surface of the prism, and

at least one of light absorbing members provided in the prism for blocking light emitted from the light source at any angle except a predetermined angle so that the metal thin film is illuminated by the light emitted from the light source at the predetermined angle, and such light is totally reflected at the metal thin film so as to reach the detecting means.

2. A surface plasmon resonance sensor according to claim 1, wherein the prism includes a semiconductor silicon substrate, the light source includes an organic EL element or a light emitting diode which emits infrared light, and the detecting means includes a photodiode.

3. A surface plasmon resonance sensor according to claim 2, wherein the photodiode is formed by doping on the one surface of the semiconductor silicon substrate;

the organic EL element includes an anode made of a transparent conductive film and formed in a predetermined pattern form, an organic layer formed on the anode and made of a thin film of organic compound material including a light emitting molecule for emitting infrared light and a cathode formed on the organic layer by deposition in a predetermined pattern form;

a gold thin film as the metal thin film is deposited on the other surface of the semiconductor silicon substrate; and

a groove formed by etching on the semiconductor silicon substrate is filled with the light absorbing member.

4. A surface plasmon resonance sensor according to claim 1, wherein a polarizing means is provided between the prism and the light source so that the metal thin film is illuminated by only the light whose polarizing direction is P-polarized emitted form the light source to the prism.

5. A surface plasmon resonance sensor according to claim 2, wherein a polarizing means is provided between the prism and the light source so that the metal thin film is illuminated by only the light whose polarizing direction is P-polarized emitted form the light source to the prism of the semiconductor silicon substrate.

6. A surface plasmon resonance sensor according to claim 3, wherein a polarizing means is provided between the prism and the light source so that the metal thin film is illuminated by only the light whose polarizing direction is P-polarized emitted form the light source to the prism of the semiconductor silicon substrate.

7. A surface plasmon resonance sensor according to claim 4, wherein the polarizing means is including a metallic slit pattern formed by deposition.

8. A surface plasmon resonance sensor according to claim 5, wherein the polarizing means is including a metallic slit pattern formed by deposition.

9. A surface plasmon resonance sensor according to claim 6, wherein the polarizing means is including a metallic slit pattern formed by deposition.

10. A surface plasmon resonance sensor comprising:

a semiconductor silicon substrate as a prism;

a light source formed on one surface of the semiconductor silicon substrate and including an organic EL element or a light emitting diode for emitting light which transmits through the semiconductor silicon substrate toward at least the other surface of the semiconductor silicon substrate facing to the one surface thereof;

a metal thin film formed at the other surface of the semiconductor silicon substrate to be illuminated by the light emitted from the light source and transmitting through the semiconductor silicon substrates;

a photodiode formed on the one surface of the semiconductor silicon substrate by doping for receiving the light emitted from the light source and totally reflected at an interface between the semiconductor silicon substrate and the metal thin film, and

a first light path formed in the semiconductor silicon substrate so that only the light emitted from the light source at a predetermined angle reaches the metal thin film.

11. A surface plasmon resonance sensor according to claim 10, wherein the first light path is formed by providing a light absorbing member in the semiconductor silicon substrate for blocking the light emitted from the light source at any angle except at the predetermined angle.

12. A surface plasmon resonance sensor according to claim 10, wherein a second light path is formed in the semiconductor silicon substrate so that only the light reflected at the metal thin film at a predetermined angle reaches the photodiode.

13. A surface plasmon resonance sensor according to claim 12, wherein the second light path is formed by providing a light absorbing member in the semiconductor silicon substrate for blocking the light reflected at the metal thin film at any angle except at the predetermined angle.

14. A surface plasmon resonance sensor according to claim 11, wherein the first light path is formed by filling a groove formed by etching with the light absorbing member.

15. A surface plasmon resonance sensor according to claim 13, wherein the second light path is formed by filling a groove formed by etching with the light absorbing member.

16. A surface plasmon resonance sensor according to claim 10, wherein the light source includes a first electrode made of a transparent conductive film formed on the one surface of the semiconductor silicon substrate in a predetermined pattern form, an organic layer formed on the first electrode and made of a thin film of organic compound material including emission molecule emitting infrared light and a second electrode formed on the organic layer in a predetermined pattern form.

17. A surface plasmon resonance sensor according to claim 16, wherein the transparent conductive film includes an ITO transparent conductive film.

18. A surface plasmon resonance sensor according to claim 10, wherein a polarizing means is provided between the semiconductor silicon substrate and the light source so that the metal thin film is illuminated by only the light whose polarizing direction is P-polarized emitted form the light source to the prism of the semiconductor silicon substrate.

19. A surface plasmon resonance sensor according to claim 18, the polarizing means including a metallic slit pattern is formed by deposition.