Substrate support having heat transfer system

• US 7,221,553 B2
• Filed: 04/22/2003
• Issued: 05/22/2007
• Est. Priority Date: 04/22/2003
• Status: Active Grant

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Ye, Yan, Hoffman, Daniel J., Ramaswamy, Kartik, Hanawa, Hiroji, Ishikawa, Tetsuya, Nguyen, Andrew, Lue, Brian C., Cheng, Wing Lau, Wong, Kwok Manus, Kats, Semyon L.
• Primary Examiner(s): Sircus; Brian
• Assistant Examiner(s): Nguyen; Danny
• Application Number:
  US10/421,473
• Publication Number:
  US 20040212947A1
• Time in Patent Office: 1,491 Days
• Field of Search: 361/230, 361/231, 361/232, 361/233, 361/234, 361/235, 165/80.1
• US Class Current: 361/234
• CPC Class Codes: H01L 21/67109 mainly by convection

Abstract

A support for a substrate processing chamber has upper and lower walls that are joined by a peripheral sidewall to define a reservoir. A fluid inlet supplies a heat transfer fluid to the reservoir. In one version, a plurality of protrusions extends into the reservoir to perturb the flow of the heat transfer fluid through the reservoir. In another version, the reservoir is an elongated channel having one or more of (i) serpentine convolutions, (ii) integral fins extending into the channel, (iii) a roughened internal surface, or (iv) a changing cross-section. A fluid outlet discharges the heat transfer fluid from the reservoir.

Claims

1. A substrate support for a substrate processing chamber, the substrate support comprising:

(a) a chuck having a substrate receiving surface;

(b) a fluid circulating reservoir and a second reservoir below the chuck, the fluid circulating reservoir comprising upper and lower walls that are joined by a peripheral sidewall extending outwardly from the upper wall, and the second reservoir comprising a third wall that is joined by the peripheral sidewall to the lower wall;

(c) a fluid inlet to supply a heat transfer fluid to the fluid circulating reservoir;

(d) a plurality of protrusions comprising spaced apart mesas that extend into the fluid circulating reservoir a sufficient length to cause the heat transfer fluid to flow around the protrusions, thereby perturbing the flow of heat transfer in the fluid circulating reservoir; and

(e) a fluid outlet to discharge the heat transfer fluid from the fluid circulating reservoir into the second reservoir.

2. A substrate support according to claim 1 wherein the chuck comprises an electrostatic chuck having an electrode covered by a dielectric, and an electrical contact to charge the electrode.

3. A substrate support according to claim 1 wherein the peripheral sidewall of the reservoir is about a perimeter of the substrate.

4. A substrate support according to claim 1 wherein the substrate receiving surface covers an area, and the fluid circulating reservoir extends across at least about 60% of the area of the substrate receiving surface.

5. A support according to claim 1 wherein the spaced apart mesas extend downwardly from the upper wall.

6. A support according to claim 1 wherein the protrusions are of a three-dimensional metal foil.

7. A support according to claim 1 wherein the fluid inlet comprises an inlet port near a peripheral portion of the fluid circulating reservoir;

and the fluid outlet comprises an outlet port near a central portion of the fluid circulating reservoir.

8. A substrate processing chamber comprising a substrate support according to claim 1, the chamber further comprising:

a gas supply conduit to provide a gas into the chamber;

a gas energizer to energize the gas to form a plasma; and

an exhaust port to exhaust the gas from the chamber.

9. A support for a substrate processing chamber, the support comprising:

(a) an upper wall having a channel comprising serpentine convolutions, and comprising integral fins that are spaced apart and extend outwardly from the upper wall and into the channel, the fins having tips;

(b) a lower wall to cover the channel such that the tips of the fins define gaps with the lower wall;

(c) a fluid inlet to pass a heat transfer fluid into the channel; and

(d) a fluid outlet to discharge the heat transfer fluid.

10. A support according to claim 9 wherein the channel comprises a roughened internal surface having a root mean square roughness value of at least about 125 microns.

11. A support according to claim 9 wherein the upper wall comprises a recessed trench having the channel therein, and wherein the lower wall is sized to seat in the recessed trench to close the channel.

12. A support according to claim 9 wherein the channel comprises a roughened internal surface having a root mean square roughness value of at least about 125 microns.

13. A support according to claim 9 wherein the channel comprises a first cross-section along a first length of the channel and a second cross-section along a second length of the channel.

14. A substrate processing chamber comprising a substrate support according to claim 9, the chamber further comprising:

a gas supply conduit to provide a gas into the chamber;

a gas energizer to energize the gas to form a plasma; and

an exhaust port to exhaust the gas in the chamber.

15. A support for a substrate processing chamber, the support comprising:

(a) a chuck having a substrate receiving surface;

(b) a fluid circulating reservoir below the chuck, the reservoir comprising upper and lower walls that are joined together to form a channel therebetween, the channel comprising serpentine convolutions and having a roughened internal surface with a root mean square roughness value of at least about 125 microns;

(c) a fluid inlet to pass a heat transfer fluid into the channel; and

(d) a fluid outlet to discharge the heat transfer fluid.

16. A support according to claim 15 wherein the channel comprises one or more spaced apart integral fins that extend into the channel.

17. A support according to claim 15 wherein the channel comprises a first cross-section along a first length of the channel and a second cross-section along a second length of the channel.

18. A support for a substrate processing chamber, the support comprising:

(a) a chuck having a substrate receiving surface;

(b) a fluid circulating reservoir below the chuck, the reservoir comprising upper and lower walls that are joined together to form a channel therebetween, the channel having a first cross-section along a first length of the channel and a second cross-section along a second length of the channel, and the channel comprises serpentine convolutions;

(c) a fluid inlet to pass a heat transfer fluid into the channel; and

(d) a fluid outlet to discharge the heat transfer fluid.

19. A support according to claim 18 wherein the channel comprises one or more spaced apart integral fins that extend into the channel.

20. A support for a substrate processing chamber, the support comprising:

(a) a chuck having a substrate receiving surface;

(b) a fluid circulating reservoir below the chuck, the reservoir comprising upper and lower walls that are joined together to form a channel therebetween,

(i) the upper wall comprising integral fins that are spaced apart and extend outwardly from the upper wall and into the channel, the integral fins have tips that define gaps with lower wall;

(ii) the channel having a first cross-section along a first length of the channel and the second cross-section along a second length of the channel, and

(iii) the channel turning back upon itself and comprising serpentine convolutions along its length;

(c) a fluid inlet to pass a heat transfer fluid into the channel; and

(d) a fluid outlet to discharge the heat transfer fluid.

21. A substrate support for a substrate processing chamber, the substrate support comprising:

(a) a chuck having a substrates receiving surface;

(b) first and second fluid circulating reservoirs below the chuck, the first reservoir comprising upper and lower walls that are joined by a peripheral sidewall, and a third wall that is joined along a peripheral lip to the lower wall to define the second reservoir;

(c) a fluid inlet to supply a heat transfer fluid to the first reservoir,

(d) a plurality of protrusions that extend into the first reservoir to perturb the flow of the heat transfer fluid in the first reservoir, and

(e) a fluid outlet to discharge the heat transfer fluid from the first reservoir to the second reservoir.

22. A support for a substrate processing chamber, the support comprising:

(a) an upper wall comprising a recessed trench having a channel therein;

(b) a lower wall to sized to seat in the recessed trench to close the channel;

(c) integral fins that are spaced apart and extend outwardly from the upper wall and into the channel;

(d) a fluid inlet to pass a heat transfer fluid into the channel; and

(e) a fluid outlet to discharge the heat transfer fluid.

23. A support for a substrate processing chamber, the support comprising:

(a) an upper wall comprising a recessed trench having a channel therein and comprising integral fins that are spaced apart and extend outwardly from the upper wall and into the channel, the fins having tips;

(b) a lower wall sized to seat in the recessed trench to close and cover the channel such that the tips of the fins define gaps with the lower wall;

(c) a fluid inlet to pass a heat transfer fluid into the channel; and

(d) a fluid outlet to discharge the heat transfer fluid.