Versatile method and system for single mode VCSELs
First Claim
Patent Images
1. An optoelectronic device, comprising:
- a first mirror;
a second mirror;
one or more heat conduction layers formed between the first mirror and the second mirror, at least one of the heat conduction layers being periodically doped to maximize doping at minima of electric fields in the optoelectronic device;
an active region situated between the first mirror and the second mirror;
an insulating layer positioned in or adjacent to the first mirror, the insulating layer defining an aperture; and
an isolation implant region extending around, and spaced outwardly from, at least part of the aperture of the insulating layer and traversing through the insulating layer and at least part of the first mirror.
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Abstract
A system and method for providing a single mode VCSEL (vertical cavity surface emitting laser). A lower mirror is formed on a substrate. An active region including one or more quantum wells is formed over the lower mirror. The upper mirror formed over the active region can include multiple layers and may be formed to be have substantially isotropic conductivity. The layers in the upper mirror can include a lightly doped DBR layer, a heavily doped second layer including an isolation region, and a third heavily doped DBR layer. The active region may include conduction layers, which may be periodically doped, to improve conductivity and reduce free carrier absorption.
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Citations
16 Claims
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1. An optoelectronic device, comprising:
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a first mirror; a second mirror; one or more heat conduction layers formed between the first mirror and the second mirror, at least one of the heat conduction layers being periodically doped to maximize doping at minima of electric fields in the optoelectronic device; an active region situated between the first mirror and the second mirror; an insulating layer positioned in or adjacent to the first mirror, the insulating layer defining an aperture; and an isolation implant region extending around, and spaced outwardly from, at least part of the aperture of the insulating layer and traversing through the insulating layer and at least part of the first mirror. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method for forming an optoelectronic device, the method comprising the steps of:
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providing a lower mirror; providing an active region above the lower mirror; providing a first DBR layer in an upper mirror above the active region, the first DBR layer having a first doping level; providing a second DBR layer in the upper mirror, the second DBR layer including an insulating layer that defines an aperture, the second DBR layer further having a second doping level that is higher than the first doping level; providing an isolation implant in an implant region, wherein the implant region extends around, and is spaced outwardly from, at least part of the aperture of the insulating layer and traverses down through at least part of the upper mirror and through the insulating layer; providing a third DBR layer formed above the second DBR layer; and providing one or more conduction layers formed between the lower mirror and the upper mirror, the one or more conduction layers being periodically doped such that heavy doping occurs at nulls of an electric field in the optoelectronic device. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
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Specification