Alignment of MTJ stack to conductive lines in the absence of topography
First Claim
1. A method of manufacturing a semiconductor device, comprising:
- providing a workpiece, the workplace including a first region and a second region;
forming a first insulating layer over the workplace;
forming at least one first alignment mark over the first region of the workpiece and a plurality of first conductive lines over the second region of the workpiece within the first insulating layer, the at least one first alignment mark being filled with a conductive material;
forming a second insulating layer over the at least one first alignment mark, the plurality of first conductive lines, and the first insulating layer;
forming a conductive via in the second insulating layer over the second region of the workpiece using a first lithography mask;
forming at least one second alignment mark within at least the second insulating layer over the first region of the workpiece using a second lithography mask, the second lithography mask being different from the first lithography mask, the at least one second alignment mark comprising a trench having a bottom and sidewalls;
depositing an opaque material layer over the at least one second alignment mark and the second insulating layer, the opaque material layer lining the bottom and sidewalls of the trench of the at least one second alignment mark, leaving a depression in the opaque material layer over each at least one second alignment mark;
depositing a first masking layer over the opaque material layer;
patterning the first masking layer using a lithography mask or tool, removing the first masking layer from over the at least one first alignment mark, using the depression over the at least one second alignment mark to align the lithography mask or tool used to pattern the first masking layer over the opaque material layer;
removing the opaque material layer from over the at least one first alignment mark using the first masking layer as a mask;
removing the first masking layer;
depositing a second masking layer over the opaque material layer and the at least one first alignment mark;
patterning the second masking layer with a pattern for the opaque material layer using the at least one first alignment mark for alignment; and
patterning the opaque material layer using the second masking layer as a mask.
5 Assignments
0 Petitions
Accused Products
Abstract
A scheme for aligning opaque material layers of a semiconductor device. Alignment marks are formed in a via level of the semiconductor device. The alignment marks are formed using a separate lithography mask, and may have about the same length as vias formed in the via layer. The alignment marks comprise trenches that are not filled with material and are not exposed to a CMP process. An opaque material layer is deposited, and depressions are formed in the opaque material layer over the alignment mark trenches. The depressions in the opaque material layer are used to align a lithography process to open the opaque material layer over alignment marks in an underlying metallization layer. The alignment marks in the metallization layer are then used to align the lithography process used to pattern the opaque material layer.
265 Citations
34 Claims
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1. A method of manufacturing a semiconductor device, comprising:
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providing a workpiece, the workplace including a first region and a second region; forming a first insulating layer over the workplace; forming at least one first alignment mark over the first region of the workpiece and a plurality of first conductive lines over the second region of the workpiece within the first insulating layer, the at least one first alignment mark being filled with a conductive material; forming a second insulating layer over the at least one first alignment mark, the plurality of first conductive lines, and the first insulating layer; forming a conductive via in the second insulating layer over the second region of the workpiece using a first lithography mask; forming at least one second alignment mark within at least the second insulating layer over the first region of the workpiece using a second lithography mask, the second lithography mask being different from the first lithography mask, the at least one second alignment mark comprising a trench having a bottom and sidewalls; depositing an opaque material layer over the at least one second alignment mark and the second insulating layer, the opaque material layer lining the bottom and sidewalls of the trench of the at least one second alignment mark, leaving a depression in the opaque material layer over each at least one second alignment mark; depositing a first masking layer over the opaque material layer; patterning the first masking layer using a lithography mask or tool, removing the first masking layer from over the at least one first alignment mark, using the depression over the at least one second alignment mark to align the lithography mask or tool used to pattern the first masking layer over the opaque material layer; removing the opaque material layer from over the at least one first alignment mark using the first masking layer as a mask; removing the first masking layer; depositing a second masking layer over the opaque material layer and the at least one first alignment mark; patterning the second masking layer with a pattern for the opaque material layer using the at least one first alignment mark for alignment; and patterning the opaque material layer using the second masking layer as a mask. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A method of manufacturing a magnetic memory device, comprising:
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providing a workpiece, the workplace including a plurality of die regions, each die region comprising an alignment mark region at the edges thereof, and an array region disposed within the alignment mark region; forming a first insulating layer over the workpiece; forming at least one first alignment mark over the alignment mark region of the workpiece and a plurality of first conductive lines over the array region of the workpiece within the first insulating layer, the at least one first alignment mark being filled wit a conductive material; forming a second insulating layer over the at least one first alignment mark, the plurality of first conductive lines, and the first insulating layer; forming a conductive via in the second insulating layer over the array region of the workpiece using a first lithography mask; forming at least one second alignment mark within at least the second insulating layer over the alignment mark region of the workpiece using a second lithography mask, the second lithography mask being different from the first lithography mask, the at least one second alignment mark comprising a trench having a bottom and sidewalls, the at least one second alignment mark not being disposed over the at least one first alignment mark; depositing a first magnetic stack over the at least one second alignment mark mid the second insulating layer, the first magnetic stack lining the bottom and sidewalls of the trench of the at least one second alignment mark, leaving a depression in the first magnetic stack over the at least one second alignment mark; depositing a first masking layer over the first magnetic stack; patterning the first masking layer using a lithography mask or tool, removing the first masking layer from over the at least one first alignment mark, using the depression over the at least one second alignment mark to align the lithography mask or tool used to pattern the first masking layer over the first magnetic stack; removing the first magnetic stack from over the at least one first alignment mark using the first masking layer as a mask; removing the first masking layer; depositing a second masking layer over the first magnetic stack and the at least one first alignment mark; patterning the second masking layer with a pattern for the first magnetic stack using the at least one first alignment mark for alignment; and patterning the first magnetic stack using the second masking layer as a mask. - View Dependent Claims (19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32)
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33. A semiconductor device, comprising:
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a workpiece, The workpiece including a first region and a second region; a first insulating layer disposed over the workpiece; at least one first alignment mark disposed over the first region of the workpiece and a plurality of first conductive lines disposed over the second region of the workpiece within the first insulating layer, the at least one first alignment mark being filled with a conductive material; a second insulating layer disposed over the at least one first alignment mark, the plurality of first conductive lines, and the first insulating layer; at least one second alignment mark disposed within the second insulating layer and a portion of the first insulating layer over the first region of the workpiece, the at least one second alignment mark comprising a trench having a bottom and sidewalls; and an opaque material layer disposed over the second insulating layer, and over the at least one second alignment mark, the opaque material layer lining the bottom and sidewalls of the trench of the second alignment mark, leaving a depression in the opaque material layer over the second alignment mark. - View Dependent Claims (34)
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Specification