Semiconductor component and method of manufacture
First Claim
1. A method for manufacturing a semiconductor component, comprising:
- providing a Semiconductor-on-Insulator (SOI) substrate having a major surface, the SOI substrate comprising a first layer of semiconductor material, a layer of dielectric material disposed on the first layer of semiconductor material, and a second layer of semiconductor material disposed on the layer of dielectric material;
forming first and second trenches in the SOI substrate, the first and second trenches laterally spaced apart horn each other and extending from the major surface into the first layer of semiconductor material;
forming first and second epitaxial semiconductor materials in the first and second trenches, respectively, wherein a portion of the first epitaxial semiconductor material in the first trench contacts the first layer of semiconductor material and has a first dopant concentration and a portion of the first epitaxial semiconductor material in the first trench that is spaced apart from the first layer of semiconductor material has a second dopant concentration and wherein a portion of the second epitaxial semiconductor material in the second trench contacts the first layer of semiconductor material and has a first dopant concentration and a portion of the second epitaxial semiconductor material that is spaced apart from the first layer of semiconductor material has a second dopant concentration;
forming a first semiconductor device from the portion of the first epitaxial semiconductor material in the first trench; and
forming a second semiconductor device from a portion of the second layer of semiconductor material.
1 Assignment
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Accused Products
Abstract
A semiconductor component having analog and logic circuit elements manufactured from an SOI substrate and a method for manufacturing the semiconductor component. An SOI substrate has a support wafer coupled to an active wafer through an insulating material. Openings are formed in the active wafer, extend through the insulating material, and expose portions of the support wafer. Epitaxial semiconductor material is grown on the exposed portions of the support wafer. Analog circuitry is manufactured from the epitaxially grown semiconductor material and high performance logic circuitry is manufactured from the active wafer. The processing steps for manufacturing the analog circuitry are decoupled from the steps for manufacturing the high performance logic circuitry. A substrate contact is made from a portion of the epitaxially grown semiconductor material that is electrically isolated from the portion in which the analog circuitry is manufactured.
24 Citations
13 Claims
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1. A method for manufacturing a semiconductor component, comprising:
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providing a Semiconductor-on-Insulator (SOI) substrate having a major surface, the SOI substrate comprising a first layer of semiconductor material, a layer of dielectric material disposed on the first layer of semiconductor material, and a second layer of semiconductor material disposed on the layer of dielectric material; forming first and second trenches in the SOI substrate, the first and second trenches laterally spaced apart horn each other and extending from the major surface into the first layer of semiconductor material; forming first and second epitaxial semiconductor materials in the first and second trenches, respectively, wherein a portion of the first epitaxial semiconductor material in the first trench contacts the first layer of semiconductor material and has a first dopant concentration and a portion of the first epitaxial semiconductor material in the first trench that is spaced apart from the first layer of semiconductor material has a second dopant concentration and wherein a portion of the second epitaxial semiconductor material in the second trench contacts the first layer of semiconductor material and has a first dopant concentration and a portion of the second epitaxial semiconductor material that is spaced apart from the first layer of semiconductor material has a second dopant concentration; forming a first semiconductor device from the portion of the first epitaxial semiconductor material in the first trench; and forming a second semiconductor device from a portion of the second layer of semiconductor material. - View Dependent Claims (2, 3, 4, 5)
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6. A method for manufacturing a semiconductor component, comprising:
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providing a Semiconductor-on-Insulator (SOL) substrate having a major surface, the SOI substrate comprising a first layer of semiconductor material, a layer of dielectric material disposed on the first layer of semiconductor material, and a second layer of semiconductor material on the layer of dielectric material; forming a first active semiconductor device from the first layer of semiconductor material; and forming a second active semiconductor device from the second layer of semiconductor material; forming an electrical contact to the first layer of semiconductor material, wherein forming the electrical contact includes forming a first shallow trench that extends through the second layer of semiconductor material and the layer of dielectric material; forming a second shallow trench that extends through the second layer of semiconductor material, and the layer of dielectric material, the second shallow trench laterally spaced apart from the first shallow trench, wherein forming the second shallow trench includes extending the second shallow trench into the first layer of semiconductor material; forming semiconductor material of a first conductivity type in the first and second shallow trenches, wherein forming the semiconductor material in the first and second shallow trenches includes epitaxially growing the semiconductor material in the first and second shallow trenches. - View Dependent Claims (7, 8, 9, 10, 11, 12, 13)
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Specification