Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layer
First Claim
1. A low temperature process for depositing a coating containing any of a semiconductor element, nitrogen, hydrogen or oxygen on a workpiece, said process comprising:
- placing the workpiece in a reactor chamber facing a processing region of the chamber;
introducing a process gas containing any of a semiconductor element, nitrogen, hydrogen or oxygen into the reactor chamber;
generating a torroidal RF plasma current in a reentrant path through the processing region by applying RF plasma source power at a first frequency to a portion of a reentrant conduit external of the chamber and forming a portion of the reentrant path.
2 Assignments
0 Petitions
Accused Products
Abstract
A low temperature process for depositing a coating containing any of silicon, nitrogen, hydrogen or oxygen on a workpiece includes placing the workpiece in a reactor chamber facing a processing region of the chamber, introducing a process gas containing any of silicon, nitrogen, hydrogen or oxygen into the reactor chamber, generating a torroidal RF plasma current in a reentrant path through the processing region by applying RF plasma source power at an HF frequency on the order of about 10 MHz to a portion of a reentrant conduit external of the chamber and forming a portion of the reentrant path, applying RF plasma bias power at an LF frequency on the order of one or a few MHz to the workpiece, and maintaining the temperature of the workpiece under about 100 degrees C.
201 Citations
64 Claims
-
1. A low temperature process for depositing a coating containing any of a semiconductor element, nitrogen, hydrogen or oxygen on a workpiece, said process comprising:
-
placing the workpiece in a reactor chamber facing a processing region of the chamber; introducing a process gas containing any of a semiconductor element, nitrogen, hydrogen or oxygen into the reactor chamber; generating a torroidal RF plasma current in a reentrant path through the processing region by applying RF plasma source power at a first frequency to a portion of a reentrant conduit external of the chamber and forming a portion of the reentrant path. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30)
-
-
31. A process for depositing a coating containing any of a semiconductor element, nitrogen, hydrogen or oxygen on a workpiece, said process comprising:
-
placing the workpiece in a reactor chamber facing a processing region of the chamber; introducing a process gas containing any of a semiconductor element, nitrogen, hydrogen or oxygen into the reactor chamber; generating a torroidal RF plasma current in each of a pair of mutually transverse reentrant paths passing through and intersecting one another in the processing region by applying RF plasma source power at a first frequency to a portion of a reentrant conduit external of the chamber and forming a portion of the reentrant path. - View Dependent Claims (32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59)
-
-
60. A process for depositing a coating containing any of a semiconductor element, nitrogen, hydrogen or oxygen on a workpiece, said process comprising:
-
placing the workpiece in a reactor chamber facing a processing region of the chamber; introducing a process gas containing any of a semiconductor element, nitrogen, hydrogen or oxygen into the reactor chamber through a gas distribution plate overlying said processing region; generating a torroidal RF plasma current in a reentrant path that extends around said gas distribution plate and across said processing region by applying RF plasma source power at a first frequency to a portion of a reentrant conduit external of the chamber and forming a portion of the reentrant path. - View Dependent Claims (61, 62)
-
-
63. A process for depositing a coating containing any of a semiconductor element, nitrogen, hydrogen or oxygen on a workpiece, said process comprising:
-
placing the workpiece in a reactor chamber facing a processing region of the chamber; introducing a process gas containing any of a semiconductor element, nitrogen, hydrogen or oxygen into the reactor chamber; generating a torroidal RF plasma current in a reentrant path passing outside of said chamber and across the processing region by applying RF plasma source power at a first frequency to a portion of a reentrant conduit external of the chamber and forming a portion of the reentrant path; restricting a cross-sectional area of the portion of said reentrant path within said processing region relative to the remaining portion of said reentrant path. - View Dependent Claims (64)
-
Specification