Pulsed electron jump generator

• US 7,223,914 B2
• Filed: 08/24/2001
• Issued: 05/29/2007
• Est. Priority Date: 05/04/1999
• Status: Expired due to Fees

• Current Assignee: NeoKismet, LLC
• Original Assignee: NeoKismet, LLC
• Inventors: Gidwani, Jawahar M, Zuppero, Anthony C
• Primary Examiner(s): Nguyen; Nam
• Assistant Examiner(s): FICK, ANTHONY D
• Application Number:
  US09/682,363
• Publication Number:
  US 20020017827A1
• Time in Patent Office: 2,104 Days
• Field of Search: 136/252, 136/253, 136/248, 136/291, 136/254, 136/205, 136/201, 310/300, 310/314, 310/322, 607/21, 605/32
• US Class Current: 136/253
• CPC Class Codes: H01L 29/66 Types of semiconductor device ; Multistep manufacturing processes therefor
• CPC Class Codes: H01M 14/005 Photoelectrochemical storage cells light sensitive devices H01G9/20, semiconductors sensitive to light H01L31/00
• CPC Class Codes: H02N 11/002 Generators
• CPC Class Codes: H02S 99/00 Subject matter not provided for in other groups of this subclass
• CPC Class Codes: Y02E 10/50 Photovoltaic [PV] energy
• CPC Class Codes: Y10S 136/291 Applications

Abstract

A device and method for stimulating pulsed chemical reactions in a small volume of gaseous reactants. An emitter stimulates the reactions of a fuel oxidizer mixture and a collector converts the vibrational energy of the resulting products into useful energy. The device may also include a reaction region, a collector, and reactants such as fuel and oxidizer. In one embodiment, air including exhausts is made to flow into and out of the reaction region, and fuel is made to flow into the reaction region. The device may be configured in several geometries, including but not limited to, a V-channel, a box and a plane.

Claims

1. A gas-phase-reactant-pulsed electric generator, comprising:

an emitter having at least a reaction surface, the emitter operable to emit hot electrons in pulses into the reaction surface to initiate chemical reactions,

a reaction region surrounding the emitter operable to contain the chemical reactions initiated on the reaction surface, the chemical reactions producing highly vibrationally excited products; and

a collector near the reaction region, the collector comprising at least a conductor whose first surface is in contact with a reaction region that is completely or partly enclosed by the first surface and whose second surface is in contact with a semiconductor, the thickness of the conductor from the first surface to the second surface being sufficiently thin to permit hot electrons emitted from highly vibrationally excited products to the conductor to travel through the conductor into the semiconductor, charging the semiconductor to a useful forward bias that is converted into electrical energy.

2. The device of claim 1, wherein the reaction region includes a surface of the emitter.

3. The device of claim 1, wherein the reaction region includes a surface of the collector.

4. The device of claim 1, wherein the emitter and the collector are on a same surface.

5. The device of claim 1, wherein the emitter and the collector are a same one device.

6. The device of claim 1, wherein the reaction region is formed as a V-channel by the surrounding collector.

7. The device of claim 1, wherein the reaction region is partly enclosed by the surrounding collector.

8. The device of claim 1, wherein the emitter includes:

an insulator;

a first electrode connected to a first side of the insulator; and

a second electrode connected to a second side of the insulator, the second electrode forming the reaction surface,

wherein energy pulses can be applied across the first electrode and the second electrode to stimulate reaction on the reaction surface.

9. The device of claim 8, wherein the insulator has thickness dimension that is less than three times the energy diffusion length of hot electrons traversing the insulator.

10. The device of claim 1, wherein the emitter includes one or more of a forward biased diode, a metal-insulator-metal device, a semiconductor-insulator metal device, a semiconductor-metal device, an optical device, and a quantum well.

11. The device of claim 1, wherein the device further includes a strip transmission line connected to the emitter for driving energy pulses into the emitter.

12. The device of claim 11, wherein the strip transmission line includes a dielectric material in contact with one or more electrodes.

13. The device of claim 11, wherein the strip transmission line includes a dispersive transmission line designed to compress pulses.

14. The device of claim 1, wherein the reaction surface includes a catalyst.

15. The device of claim 1, wherein the collector includes a reaction surface.

16. The device of claim 1, wherein the emitter includes a semiconductor whose p side is ohmically or almost ohmically attached to the reaction surface.

17. The device of claim 1, wherein the emitter includes an electrically pulsed solid state optically emitting diode.

18. The device for generating energy as claimed in claim 1, wherein the collector further includes:

a conductor electrode connected to the conductor; and

a collector electrode in ohmic contact with the semiconductor,

wherein the hot electrons created in the collector cause the semiconductor to become forward biased and produces useful voltage across the collector electrode and the conductor electrode.

19. The device of claim 1, wherein the collector further includes:

a quantum well structure directly connected to the first conductor surface.

20. The device of claim 1, wherein the collector includes:

a Schottky diode directly connected to the second conductor surface.

21. The device of claim 20, wherein the semiconductor forms part of the Schottky diode.

22. The device of claim 1, wherein the first conductor conducting surface is supplied with one or combination of fuel and oxidizer additives.

23. The device of claim 1, wherein the first conducting surface with includes superlattice structures.

24. The device of claim 1, wherein the conductor is formed from material with a Debye temperature property chosen to optimize the ratio of hot electrons and phonons generated upon exposure to reaction products.

25. The device of claim 1, wherein the collector collects electromagnetic radiation.

26. The device of claim 1, wherein the semiconductor includes:

a highly doped p+ region;

a p doped region; and

a n doped region.

27. The device of claim 1, wherein the device further includes a fuel port in close proximity to the emitter.

28. The device of claim 1, wherein the electrical energy is stored and used to energize the emitter to emit hot electrons.

29. The device of claim 1, wherein the emitter is energized initially from one or more of pulse of energy, reaction intermediates, autocatalysts, monopropellant, reaction stimulators, optical pulses, pulsed laser radiation, optical radiation.

30. The device of claim 1, wherein the conductor includes catalysts.

31. The device of claim 1, wherein the conductor includes a plurality of layers of one or more materials.

32. The device of claim 1, wherein the reaction surface and the first conductor surface are formed from same material.

33. The device of claim 1, wherein the emitter and the collector are next to one another.

34. The device of claim 1, wherein the emitter and the collector are one same component and the reaction surface is the first conductor surface.

35. A device for extracting a net excess of useful work, comprising:

an emitter having at least a reaction surface, the emitter operable to emit hot electrons in pulses into the reaction surface to initiate chemical reactions,

a reaction region surrounding the emitter operable to contain the chemical reactions initiated on the reaction surface, the chemical reactions producing highly vibrationally excited products; and

a collector near the reaction region, comprising at least a conductor whose first surface is in contact with a reaction region that is completely or partly enclosed by the first surface and whose second surface is in contact with a semiconductor, the thickness of the conductor from the first surface to the second surface being sufficiently thin to permit hot electrons emitted from highly vibrationally excited products to the conductor to travel through the conductor into the semiconductor, charging the semiconductor to a useful forward bias that is converted into electrical energy,

the dimension of the reaction region being such that a distance from a geometric center of the reaction region to a nearest collector surface is less than three times an energy diffusion length of the highly vibrationally excited reaction products.