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Design and fabrication of 6.1-Å family semiconductor devices using semi-insulating A1Sb substrate

  • US 7,224,041 B1
  • Filed: 05/28/2004
  • Issued: 05/29/2007
  • Est. Priority Date: 09/30/2003
  • Status: Expired due to Fees
First Claim
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1. A method of forming a semiconductor device, comprising:

  • providing a bulk single crystal semi-insulating AlSb substrate having a resistivity of greater than about 107 Ω

    ·

    cm; and

    growing one or more semiconductor layers substantially lattice matched to said bulk single crystal semi-insulating AlSb substrate.

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  • 4 Assignments
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