RF power amplifier and method for packaging the same
First Claim
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1. An RF power amplifier suitable for transmitting signals in a mobile telephone system comprising:
- a ceramic chip carrier having a top conductive layer, one or more middle conductive layers, and a bottom conductive layer, wherein and the bottom conductive layer is adapted to be mounted to a printed circuit board;
a complimentary metal-oxide semiconductor (CMOS) device, the CMOS device having a plurality of connection points adapted to be mounted to the top conductive layer of the ceramic chip carrier, and wherein the CMOS device and the ceramic chip carrier are packaged together to form the RE power amplifier; and
a plurality of RE amplifier stages, each of the plurality of RE amplifier stages including one or more inductive elements formed in the chip carrier, one or more capacitive elements formed in the CMOS device, and one or more switching devices formed in the CMOS device.
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Abstract
A method and apparatus is provided for use in power amplifiers for reducing the peak voltage that transistors are subjected to. A power amplifier is provided with first and second switching devices and an inductor connected between the switching devices. The switching devices are driven such that the switching devices are turned on and off during the same time intervals.
68 Citations
20 Claims
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1. An RF power amplifier suitable for transmitting signals in a mobile telephone system comprising:
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a ceramic chip carrier having a top conductive layer, one or more middle conductive layers, and a bottom conductive layer, wherein and the bottom conductive layer is adapted to be mounted to a printed circuit board; a complimentary metal-oxide semiconductor (CMOS) device, the CMOS device having a plurality of connection points adapted to be mounted to the top conductive layer of the ceramic chip carrier, and wherein the CMOS device and the ceramic chip carrier are packaged together to form the RE power amplifier; and a plurality of RE amplifier stages, each of the plurality of RE amplifier stages including one or more inductive elements formed in the chip carrier, one or more capacitive elements formed in the CMOS device, and one or more switching devices formed in the CMOS device. - View Dependent Claims (2, 3, 4, 5)
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6. An RF power amplifier suitable for transmitting signals in a mobile telephone system comprising:
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a chip carrier, the chip carrier having an upper surface, one or more conductive layers, and a bottom surface having a plurality of connection points adapted to be mounted to a circuit board; a complimentary metal-oxide semiconductor (CMOS) device, the CMOS device having a plurality of connection points adapted to be mounted to the upper surface of the chip carrier, wherein the CMOS device and the chip carrier are packaged together to form the RF power amplifier; and a plurality of tuned RF amplifier stages, each tuned RF amplifier stage further comprising one or more passive elements formed in the chip carrier and one or more active devices formed in the CMOS device. - View Dependent Claims (7, 8, 9, 10, 11, 12, 13, 14)
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15. A method of amplifying signals for a mobile telephone system comprising:
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providing a chip carrier having an upper surface, one or more conductive layers, and a bottom surface; forming a plurality of connection points on the bottom surface of the chip carrier adapted to be mounted to a circuit board; providing a complimentary metal-oxide semiconductor (CMOS) device; forming a plurality of connection points on the CMOS device; mounting the CMOS device to the upper surface of the chip carrier with the plurality of connection points on the CMOS device making electrical contact with the upper surface of the chip carrier; and forming a plurality of tuned RF amplifier stages, wherein each tuned RF amplifier stage is formed using one or more passive elements formed in the chip carrier and one or more active devices formed in the CMOS device. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification