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Sequential lithographic methods to reduce stacking fault nucleation sites

  • US 7,226,805 B2
  • Filed: 06/22/2006
  • Issued: 06/05/2007
  • Est. Priority Date: 03/18/2004
  • Status: Active Grant
First Claim
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1. A method of fabricating an epitaxial silicon carbide layer comprising:

  • forming a plurality of first features in a surface of a silicon carbide substrate having an off-axis orientation toward a predetermined crystallographic direction, the plurality of first features including at least one first sidewall that is oriented nonparallel to the predetermined crystallographic direction;

    growing a first epitaxial silicon carbide layer on the surface of the silicon carbide substrate that includes the plurality of first features therein, the first epitaxial silicon carbide layer being thicker than a depth of the at least one first sidewall;

    forming a plurality of second features in a surface of the first epitaxial layer, the plurality of second features including at least one second sidewall that is oriented nonparallel to the predetermined crystallographic direction; and

    growing a second epitaxial silicon carbide layer on the surface of the first epitaxial layer that includes the plurality of second features therein, the second epitaxial silicon carbide layer being thicker than a depth of the at least one second sidewall.

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