Method for producing a fluid device, fluid device and analysis apparatus

• US 7,226,862 B2
• Filed: 06/04/2001
• Issued: 06/05/2007
• Est. Priority Date: 12/05/2000
• Status: Expired due to Fees

• Current Assignee: Febit Holding GmbH (FEBIT), Hahn-Schickard-Gesellschaft für angewandte Forschung e.V.
• Original Assignee: Febit Biotech GmbH
• Inventors: Mueller, Martin, Staehler, Cord F., Frech, Johannes, Nommensen, Peter, Strobelt, Tilo
• Primary Examiner(s): SINES, BRIAN J
• Application Number:
  US09/873,455
• Publication Number:
  US 20020068021A1
• Time in Patent Office: 2,192 Days
• Field of Search: 422/50, 422/55, 422/58, 422/61, 422/63, 422/68.1, 422/81, 422/82.05, 422100-103, 436/43, 436/52, 436/164, 436/174, 436/180, 438/14, 438/16, 438/17, 438/22, 438/48, 438/49, 438/51, 438/478, 438/455, 438/689
• US Class Current: 438/689
• CPC Class Codes: B01L 2200/12 Specific details about manufacturing devices
• CPC Class Codes: B01L 3/502707 characterised by the manufacture of the container or its components by shaping or joining plastic parts B29C59/00, B29C65/00; by laminating B32B37/00; manufacture of microstructural devices in general B81C
• CPC Class Codes: B81B 1/00 Devices without movable or flexible elements, e.g. microcapillary devices
• CPC Class Codes: B81B 2201/058 Microfluidics not provided for in B81B2201/051 - B81B2201/054
• CPC Class Codes: B81B 2203/0338 Channels
• CPC Class Codes: B81C 1/00119 Arrangement of basic structures like cavities or channels, e.g. suitable for microfluidic systems
• CPC Class Codes: B81C 1/00357 involving bonding one or several substrates on a non-temporary support, e.g. another substrate
• CPC Class Codes: B81C 2201/019 Bonding or gluing multiple substrate layers
• CPC Class Codes: Y10T 436/11 Automated chemical analysis
• CPC Class Codes: Y10T 436/25 including sample preparation
• CPC Class Codes: Y10T 436/2575 Volumetric liquid transfer

Abstract

In the case of a method for producing a fluid device with a fluid structure having an active height, a basic wafer is provided, which comprises a supporting substrate, an insulating layer on the supporting substrate and a patterned layer on the supporting substrate, the thickness of the patterned layer determining the active height of the fluid structure. Following this, the fluid structure is produced in the patterned layer of the basic wafer, said fluid structure extending through the semiconductor layer. A transparent wafer is then applied so that the fluid structure is covered. Subsequently, the supporting substrate and the insulating layer are removed from the back so that the fluid structure is exposed at a second surface of the patterned layer. Finally, a second transparent wafer is attached to the exposed second surface of the semiconductor layer so that the fluid structure is covered. The essential parameter of the fluid device, viz. the active height of the fluid structure, need no longer be controlled making use of the etching parameters, but is already determined by the specifications of the starting material, e.g. an SOI wafer. This means that economy-priced fluid devices can be produced with high precision.

Claims

1. A method of producing a fluid device with a fluid structure having an active height, said method comprising the following steps:

providing a basic wafer comprising a supporting substrate, an intermediate layer on the supporting substrate and a to be patterned layer on the supporting substrate, the thickness of the to be patterned layer determining the active height of the fluid structure, said intermediate layer being of such a material that it is essentially not impaired by a patterning step to pattern the to be patterned layer;

p1 patterning the to be patterned layer so as to obtain a patterned layer and to produce the fluid structure of the fluid device, the fluid structure extending from a first surface of the patterned layer to the intermediate layer;

attaching a first transparent wafer so that the fluid structure is covered;

removing the supporting substrate and the intermediate layer so that the fluid structure is exposed at a second surface of the patterned layer; and

attaching a second transparent wafer so that the fluid structure is covered.

2. A method according to claim 1, wherein the basic wafer is an SOI structure comprising a supporting wafer of silicon, an insulating layer of oxide as an intermediate layer and a silicon layer as a patterned layer on the oxide layer.

3. A method according to claim 2, wherein the patterning step is carried out by means of dry etching silicon, the oxide layer acting as an etch stop.

4. A method according to claim 1, wherein the first transparent wafer is a glass wafer which is attached to the patterned layer by means of anodic bonding.

5. A method according to claim 1, wherein the fluid structure is passivated by means of an oxide layer prior to the step of attaching the first transparent wafer.

6. A method according to claim 1, wherein the second transparent wafer is a glass wafer which is attached to the second surface of the patterned layer by means of anodic banding.

7. A method according to claim 1, wherein, in the step of removing the supporting substrate and the intermediate layer, the supporting substrate is removed by etching, the intermediate layer acting as an etch stop, whereupon the etching method is changed so that the intermediate layer is etched and the patterned layer acts as an etch stop.

8. A method according to claim 1, wherein the fluid device is a capillary path, the providing step including the step of selecting a basic wafer whose patterned layer has a height of such a material that a fluid to be transported in the fluid structure is transportable by capillary forces.

9. A method of producing a fluid device with a fluid structure having an active height, said method comprising the steps of:

providing a basic wafer comprising a supporting substrate, an intermediate layer on the supporting substrate and a to be patterned layer on the intermediate layer, the intermediate layer being transparent and of such a material that it is essentially not impaired by a patterning step to pattern the to be patterned layer, and the thickness of the to be patterned layer determining the active height of the fluid structure,

patterning the to be patterned layer so as to obtain a patterned layer and to produce the fluid structure of the fluid component) the fluid structure extending from a first surface of the patterned layer to the intermediate layer;

attaching a first transparent wafer so that the fluid structure is covered;

removing the supporting substrate so that the transparent intermediate layer is exposed; and

attaching a second transparent wafer to the intermediate layer.