Methods for removal of organic materials
First Claim
Patent Images
1. A method for removing organic materials, comprising removing at least a portion of an organic-material-comprising layer from a barrier material surface with a pad and a fluid, the fluid being substantially unreactive with the surface and comprising less than or equal to about 0.1 weight percent particles at an initiation of the removing.
0 Assignments
0 Petitions
Accused Products
Abstract
The invention includes methods of forming capacitor structures and removing organic material. An organic material, such as a photoresist, is disposed on a substrate. The organic material is contacted with a chemical mechanical polishing pad and a polishing fluid to remove the organic material from the substrate. The polishing fluid can be essentially free of particles, and can be water.
9 Citations
36 Claims
- 1. A method for removing organic materials, comprising removing at least a portion of an organic-material-comprising layer from a barrier material surface with a pad and a fluid, the fluid being substantially unreactive with the surface and comprising less than or equal to about 0.1 weight percent particles at an initiation of the removing.
- 8. A method for removing organic materials, comprising removing at least a portion of an organic-material-comprising layer from a semiconductive substrate surface with a pad and a fluid, the fluid being substantially unreactive with the surface and comprising less than or equal to about 0.1 weight percent particles at an initiation of the removing, wherein at least some of the particles comprise silica.
- 11. A method for removing organic materials, comprising removing at least a portion of an organic-material-comprising layer from a semiconductive substrate surface with a pad and a fluid, the fluid being substantially unreactive with the surface and comprising less than or equal to about 0.1 weight percent particles at an initiation of the removing, wherein the surface comprises at least two layers, a first conductive layer of the two layers comprising N and Si, and a second conductive layer of the two layers comprising N.
-
17. A material removal method comprising:
-
providing a substrate supporting a barrier-material-comprising layer, the barrier-material-comprising layer having an organic-material-comprising layer thereover; selectively removing at least a portion of the organic-material-comprising layer with a first polishing process utilizing a first liquid to thereby expose at least a portion of an upper surface of the barrier-material-comprising layer, wherein the first liquid is substantially unreactive with the barrier-material-comprising layer and comprises less than or equal to 0.1 weight percent particles at an initiation of the removing; and removing at least a portion of the barrier-material-comprising layer with a second polishing process utilizing a second liquid. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24, 25, 26)
-
-
27. A material removal method comprising:
-
providing a substrate supporting a conductive-material-comprising layer, the conductive-material-comprising layer having an organic-material-comprising layer thereover; selectively removing at least a portion of the organic-material-comprising layer with a first polishing process utilizing a first liquid to thereby expose at least a portion of an upper surface of the conductive-material-comprising layer, wherein the first liquid is substantially unreactive with the conductive-material-comprising layer and comprises less than or equal to 0.1 weight percent particles at an initiation of the removing; and removing at least a portion of the conductive-material-comprising layer with a second polishing process utilizing a second liquid, wherein the second liquid is reactive with the conductive-material-comprising layer. - View Dependent Claims (28, 29, 30, 31, 32, 33, 34, 35, 36)
-
Specification