Method of modifying interlayer adhesion
First Claim
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1. A method for processing a substrate, comprising:
- depositing a barrier layer on the substrate, wherein the barrier layer comprises silicon and carbon and has a dielectric constant less than 4;
depositing a dielectric initiation layer adjacent the barrier layer, wherein the dielectric initiation layer is a silicon oxycarbide layer and is deposited by introducing a first processing gas comprising an organosilicon compound and an oxidizing compound into a processing chamber at a first organosilicon flow rate and reacting the first processing gas; and
depositing a first dielectric layer adjacent the dielectric initiation layer, wherein the first dielectric layer comprises silicon, oxygen, and carbon and has a dielectric constant of about 3 or less and is deposited by introducing a second processing gas comprising an organosilicon compound and an oxidizing compound into the processing chamber at a second organosilicon flow rate and reacting the second processing gas, wherein the second organosilicon flow rate is greater than the first organosilicon flow rate.
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Abstract
Methods are provided for processing a substrate for depositing an adhesion layer having a low dielectric constant between two low k dielectric layers. In one aspect, the invention provides a method for processing a substrate including depositing a barrier layer on the substrate, wherein the barrier layer comprises silicon and carbon and has a dielectric constant less than 4, depositing a dielectric initiation layer adjacent the barrier layer, and depositing a first dielectric layer adjacent the dielectric initiation layer, wherein the dielectric layer comprises silicon, oxygen, and carbon and has a dielectric constant of about 3 or less.
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Citations
7 Claims
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1. A method for processing a substrate, comprising:
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depositing a barrier layer on the substrate, wherein the barrier layer comprises silicon and carbon and has a dielectric constant less than 4; depositing a dielectric initiation layer adjacent the barrier layer, wherein the dielectric initiation layer is a silicon oxycarbide layer and is deposited by introducing a first processing gas comprising an organosilicon compound and an oxidizing compound into a processing chamber at a first organosilicon flow rate and reacting the first processing gas; and depositing a first dielectric layer adjacent the dielectric initiation layer, wherein the first dielectric layer comprises silicon, oxygen, and carbon and has a dielectric constant of about 3 or less and is deposited by introducing a second processing gas comprising an organosilicon compound and an oxidizing compound into the processing chamber at a second organosilicon flow rate and reacting the second processing gas, wherein the second organosilicon flow rate is greater than the first organosilicon flow rate. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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Specification