Thin film device provided with coating film, liquid crystal panel and electronic device, and method for making the thin film device

• US 7,229,859 B2
• Filed: 01/29/2003
• Issued: 06/12/2007
• Est. Priority Date: 05/15/1996
• Status: Expired due to Fees

• Current Assignee: Seiko Epson Corporation (Seiko Group)
• Original Assignee: Seiko Epson Corporation (Seiko Group)
• Inventors: Kanbe, Sadao, Shimoda, Tatsuya, Miyazawa, Wakao, Yudasaka, Ichio
• Primary Examiner(s): Whitehead, Jr.; Carl
• Assistant Examiner(s): Au; Bac H.
• Application Number:
  US10/353,005
• Publication Number:
  US 20030134519A1
• Time in Patent Office: 1,595 Days
• Field of Search: 438/149, 438/608, 438/609, 438/626, 438/627, 438/787, 438/789, 438/790, 438/758, 438/759, 257/57, 257/58, 257/59
• US Class Current: 438/149
• CPC Class Codes: C09K 2323/051 Inorganic, e.g. glass or silicon oxide
• CPC Class Codes: G02F 1/136227 Through-hole connection of the pixel electrode to the active element through an insulation layer
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/1285 using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
• CPC Class Codes: H01L 27/1292 using liquid deposition, e.g. printing
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: H01L 29/66765 Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
• CPC Class Codes: Y10T 428/31663 As siloxane, silicone or silane

Abstract

Any one of an insulating film forming a TFT, a silicon film and a conductive film is formed by applying a solution and annealing it. In a spin coater (102), a coating solution containing a thin film component which is supplied from a solution storage section (105) is spin-coated onto a substrate. The substrate after coating the coating solution is annealed in an annealing section (103) to form a coating film on the substrate. Additional laser annealing improves one of film characteristics, i.e., crystallinity, density and adhesiveness. Application of the coating solution or a resist by an ink jet process increases utilization of the solution and permits forming a patterned coating film. Because a thin film device in accordance with the present invention is inexpensive and has a high throughput, TFT production by a production system having high utilization of the coating solution drastically reduces initial investment and production cost of a liquid crystal display device.

Claims

1. A method of forming a device, the method comprising:

applying a first solution to form a first applied film over a portion of a substrate, the first applied film being patterned, the first solution including a first solvent and a first solute;

heating the first applied film at a temperature ranging from 250°

C. to 500°

C. to form a first film over the portion, the first solvent being evaporated during a period in which the heating of the first applied film is carried out;

applying a second solution to form a second applied film over the portion of the substrate, the second applied film being patterned, the second solution including a second solvent and a second solute;

heating the second applied film at a temperature ranging from 250°

C. to 500°

C. to form a second film over the portion, the second solvent being evaporated during a period in which the heating of the second applied film is carried out;

applying a dispersion liquid to form a third applied film over the portion of the substrate, the dispersion liquid including a dispersion medium and a dispersoid, the dispersoid being a metal particle with a size of 80 to 100 angstroms; and

heating the third applied film at a temperature ranging from 250°

C. to 500°

C. to form a third film over the portion.

2. The method of forming a device according to claim 1, the first solvent being a terpineol.

3. The method of forming a device according to claim 1, the first solute being a semiconductor material.

4. A method of forming a device, the method comprising:

applying a first solution to form a first applied film over a portion of a substrate, the first applied film being patterned, the first solution including a first solvent and a first solute;

heating the first applied film at a temperature ranging from 250°

C. to 500°

C. to form a first film over the portion, the first solvent being evaporated during a period in which the heating of the first applied film is carried out;

applying a second solution to form a second applied film over the portion of the substrate, the second applied film being patterned, the second solution including a second solvent and a second solute;

heating the second applied film at a temperature ranging from 250°

C. to 500°

C. to form a second film over the portion, the second solvent being evaporated during a period in which the heating of the second applied film is carried out;

applying a dispersion liquid to form a third applied film over the portion of the substrate, the dispersion liquid including a dispersion medium and a dispersoid, the dispersoid being an Al particle; and

heating the third applied film at a temperature ranging from 250°

C. to 500°

C. to form a third film over the portion.

5. A method of forming a device, the method comprising:

applying a first solution to form a first applied film over a portion of a substrate, the first applied film being patterned, the first solution including a first solvent and a first solute;

heating the first applied film at a temperature ranging from 250°

C. to 500°

C. to form a first film over the portion, the first solvent being evaporated during a period in which the heating of the first applied film is carried out;

applying a second solution to form a second applied film over the portion of the substrate, the second applied film being patterned, the second solution including a second solvent and a second solute;

heating the second applied film at a temperature ranging from 250°

C. to 500°

C. to form a second film over the portion, the second solvent being evaporated during a period in which the heating of the second applied film is carried out;

applying a dispersion liquid to form a third applied film over the portion of the substrate, the dispersion liquid including a dispersion medium and a dispersoid, the dispersoid being an Ag article; and

heating the third applied film at a temperature ranging from 250°

C. to 500°

C. to form a third film over the portion.

6. A method of forming a device, the method comprising:

applying a first solution to form a first applied film over a portion of a substrate, the first applied film being patterned, the first solution being patterned, the first solution including a first solvent and a first solute;

heating the first applied film at a temperature ranging from 250°

C. to 500°

C. to form a first film over the portion, the first solvent being evaporated during a period in which the heating of the first applied film is carried out;

applying a second solution to form a second applied film over the portion of the substrate, the second applied film being patterned, the second solution including a second solvent and a second solute;

heating the second applied film at a temperature ranging from 250°

C. to 500°

C. to form a second film over the portion, the second solvent being evaporated during a period in which the heating of the second applied film is carried out;

applying a dispersion liquid to form a third applied film over the portion of the substrate, the dispersion liquid including a dispersion medium and a dispersoid, the dispersoid being an Cu particle; and

heating the third applied film at a temperature ranging from 250°

C. to 500°

C. to form a third film over the portion.