Precision creation of inter-gates insulator
First Claim
1. An isolation providing method comprising:
- (a) defining a first oxidation stop layer at a top surface portion of a first conductively-doped semiconductor layer;
(b) using atomic layer deposition (ALD) to adhere a first intrinsic silicon layer onto the first oxidation stop layer, wherein said use of atomic layer deposition (ALD) defines a thickness of the first intrinsic silicon layer;
(c) thermally oxidizing at least a sublayer portion of the first intrinsic silicon layer so as to thereby create a corresponding and thermally-grown, first intrinsic silicon oxide sublayer over the first semiconductor layer; and
(d) disposing a second conductively-doped semiconductor layer above the first intrinsic silicon oxide sublayer so that the first intrinsic silicon oxide sublayer provides isolation between the first and second conductively-doped semiconductor layers.
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Accused Products
Abstract
An ONO-type inter-poly insulator is formed by depositing intrinsic silicon on an oxidation stop layer. In one embodiment, the oxidation stop layer is a nitridated top surface of a lower, and conductively-doped, polysilicon layer. In one embodiment, atomic layer deposition (ALD) is used to precisely control the thickness of the deposited, intrinsic silicon. Heat and an oxidizing atmosphere are used to convert the deposited, intrinsic silicon into thermally-grown, silicon dioxide. The oxidation stop layer impedes deeper oxidation. A silicon nitride layer and an additional silicon oxide layer are further deposited to complete the ONO structure before an upper, and conductively-doped, polysilicon layer is formed. In one embodiment, the lower and upper polysilicon layers are patterned to respectively define a floating gate (FG) and a control gate (CG) of an electrically re-programmable memory cell. In an alternative embodiment, after the middle, silicon nitride of the ONO structure is defined, another layer of intrinsic silicon is deposited, by way of for example, ALD. Heat and an oxidizing atmosphere are used to convert the second deposited, intrinsic silicon into thermally-grown, silicon dioxide. An ONO structure with two thermally-grown, and spaced apart, silicon oxide layers is thereby provided.
16 Citations
22 Claims
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1. An isolation providing method comprising:
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(a) defining a first oxidation stop layer at a top surface portion of a first conductively-doped semiconductor layer; (b) using atomic layer deposition (ALD) to adhere a first intrinsic silicon layer onto the first oxidation stop layer, wherein said use of atomic layer deposition (ALD) defines a thickness of the first intrinsic silicon layer; (c) thermally oxidizing at least a sublayer portion of the first intrinsic silicon layer so as to thereby create a corresponding and thermally-grown, first intrinsic silicon oxide sublayer over the first semiconductor layer; and (d) disposing a second conductively-doped semiconductor layer above the first intrinsic silicon oxide sublayer so that the first intrinsic silicon oxide sublayer provides isolation between the first and second conductively-doped semiconductor layers. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A method of forming insulation comprising:
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(a) defining an oxidation stop layer in a top portion of a first conductively-doped semiconductor layer; (b) providing an essentially undoped semiconductor layer on the first conductively-doped semiconductor layer and above the first oxidation stop layer; (c) oxidizing the essentially updoped semiconductor layer so as to thereby create a corresponding, essentially undoped and thermally-grown, first oxide sublayer over the first conductively-doped semiconductor layer; and (d) disposing a second conductively-doped semiconductor layer above the first oxide sublayer so that the first oxide sublayer provides electrical insulation between the first and second conductively-doped semiconductor layers;
wherein;(a.1) said defining of the oxidation stop layer includes defining an adhesion surface on the top portion of a first conductively-doped semiconductor layer for adhering to the essentially undoped semiconductor layer; and
wherein;(b.1) said providing of the essentially undoped semiconductor layer includes chemisorbing a first reactant monolayer to the adhesion surface on the top portion of a first conductively-doped semiconductor layer, where the first reactant monolayer can react with a subsequently provided, second reactant to form a base monolayer of said essentially undoped semiconductor layer.
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19. A method of providing a high quality silicon dioxide layer atop a first conductively-doped semiconductor layer, the method comprising:
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(a) introducing nitrogen into the first conductively-doped semiconductor layer through a top portion of the first conductively-doped semiconductor layer; (b) adhering an essentially undoped silicon layer to the top portion of the first conductively-doped semiconductor layer; (c) thermally oxidizing the adhered and essentially undoped silicon layer at least until a corresponding oxidation front of said thermal oxidizing step reaches the nitrogen introduced into the first conductively-doped semiconductor layer; and (d) continuing said thermal oxidizing step beyond when the corresponding oxidation front reaches the introduced nitrogen; and
wherein said adhering includes using of atomic layer deposition (ALD) to adhere a predefined number of monolayers of essentially undoped silicon to the top portion of the first conductively-doped semiconductor layer. - View Dependent Claims (20, 21, 22)
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Specification