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Precision creation of inter-gates insulator

  • US 7,229,880 B2
  • Filed: 11/19/2003
  • Issued: 06/12/2007
  • Est. Priority Date: 11/19/2003
  • Status: Active Grant
First Claim
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1. An isolation providing method comprising:

  • (a) defining a first oxidation stop layer at a top surface portion of a first conductively-doped semiconductor layer;

    (b) using atomic layer deposition (ALD) to adhere a first intrinsic silicon layer onto the first oxidation stop layer, wherein said use of atomic layer deposition (ALD) defines a thickness of the first intrinsic silicon layer;

    (c) thermally oxidizing at least a sublayer portion of the first intrinsic silicon layer so as to thereby create a corresponding and thermally-grown, first intrinsic silicon oxide sublayer over the first semiconductor layer; and

    (d) disposing a second conductively-doped semiconductor layer above the first intrinsic silicon oxide sublayer so that the first intrinsic silicon oxide sublayer provides isolation between the first and second conductively-doped semiconductor layers.

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