×

Method for making a semiconductor device including a superlattice with regions defining a semiconductor junction

  • US 7,229,902 B2
  • Filed: 04/01/2005
  • Issued: 06/12/2007
  • Est. Priority Date: 06/26/2003
  • Status: Active Grant
First Claim
Patent Images

1. A method for making a semiconductor device comprising:

  • forming a superlattice comprising a plurality of stacked groups of layers;

    each group of layers of the superlattice comprising a plurality of stacked base silicon monolayers defining a base silicon portion and an energy band-modifying layer thereon;

    the energy band-modifying layer comprising at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base silicon portions, and at least some silicon atoms from opposing silicon portions of the superlattice being chemically bound together through the at least one non-semiconductor monolayer therebetween; and

    forming at least one pair of oppositely-doped regions in the superlattice defining at least one semiconductor junction.

View all claims
  • 5 Assignments
Timeline View
Assignment View
    ×
    ×