Semiconductor device having transferred integrated circuit

• US 7,230,316 B2
• Filed: 12/22/2003
• Issued: 06/12/2007
• Est. Priority Date: 12/27/2002
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Goto, Yuugo, Kuwabara, Hideaki, Ohno, Yumiko, Takayama, Toru, Maruyama, Junya, Yamazaki, Shunpei
• Primary Examiner(s): Hu; Shouxiang
• Application Number:
  US10/740,606
• Publication Number:
  US 20050051870A1
• Time in Patent Office: 1,268 Days
• Field of Search: 257/531, 257/533, 257/782, 257/783, 257/68, 257/72
• US Class Current: 257/531
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 2221/68354 used to support diced chips prior to mounting
• CPC Class Codes: H01L 2221/68359 used as a support during manufacture of interconnect decals or build up layers
• CPC Class Codes: H01L 2221/68363 used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
• CPC Class Codes: H01L 2221/68368 used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
• CPC Class Codes: H01L 2224/16145 the bodies being stacked
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/32145 the bodies being stacked
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/73204 the bump connector being embedded into the layer connector
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2224/81801 Soldering or alloying
• CPC Class Codes: H01L 2224/92247 the second connecting process involving a wire connector
• CPC Class Codes: H01L 23/5385 Assembly of a plurality of insulating substrates
• CPC Class Codes: H01L 23/5388 for flat cards, e.g. credit cards cards per se G06K19/00
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/73 : Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 24/81 : using a bump connector
• CPC Class Codes: H01L 27/0688 : Integrated circuits having a three-dimensional layout
• CPC Class Codes: H01L 27/12 : the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 29/66757 : Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01012 : Magnesium [Mg]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01024 : Chromium [Cr]
• CPC Class Codes: H01L 2924/01025 : Manganese [Mn]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/0103 : Zinc [Zn]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01041 : Niobium [Nb]
• CPC Class Codes: H01L 2924/01042 : Molybdenum [Mo]
• CPC Class Codes: H01L 2924/01045 : Rhodium [Rh]
• CPC Class Codes: H01L 2924/01046 : Palladium [Pd]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01055 : Cesium [Cs]
• CPC Class Codes: H01L 2924/01056 : Barium [Ba]
• CPC Class Codes: H01L 2924/0106 : Neodymium [Nd]
• CPC Class Codes: H01L 2924/01073 : Tantalum [Ta]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01077 : Iridium [Ir]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/01087 : Francium [Fr]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/12034 : Varactor
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/13063 : Metal-Semiconductor Field-Effect Transistor [MESFET]
• CPC Class Codes: H01L 2924/13064 : High Electron Mobility Transistor [HEMT, HFET [heterostructure FET], MODFET]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/1423 : Monolithic Microwave Integrated Circuit [MMIC]
• CPC Class Codes: H01L 2924/15311 : being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/15787 : Ceramics, e.g. crystalline carbides, nitrides or oxides
• CPC Class Codes: H01L 2924/15788 : Glasses, e.g. amorphous oxides, nitrides or fluorides
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/19042 : being an inductor
• CPC Class Codes: H01L 2924/19043 : being a resistor
• CPC Class Codes: H01L 2924/19105 : in a side-by-side arrangement on a common die mounting substrate
• CPC Class Codes: H01L 2924/207 : Diameter ranges
• CPC Class Codes: H01L 2924/3011 : Impedance
• CPC Class Codes: H03H 3/08 : for the manufacture of resonators or networks using surface acoustic waves

Abstract

It is an object to provide a semiconductor device integrating various elements without using a semiconductor substrate, and a method of manufacturing the same. According to the present invention, a layer to be separated including an inductor, a capacitor, a resistor element, a TFT element, an embedded wiring and the like, is formed over a substrate, separated from the substrate, and transferred onto a circuit board 100. An electrical conduction with a wiring pattern 114 provided in the circuit board 100 is made by a wire 112 or a solder 107, thereby forming a high frequency module or the like.

Claims

1. A semiconductor device comprising:

a circuit board;

at least first and second terminals formed on the circuit board;

a first adhesive agent formed on the circuit board;

a first functional circuit peeled from a first processing substrate at a first tungsten oxide layer, and mounted over the circuit board with the first adhesive agent therebetween, the first functional circuit comprising;

a first electrode electrically connected to the first terminal;

a first insulating film on the first electrode and the first adhesive agent;

a thin film transistor over the first insulating layer wherein the first electrode is electrically connected to the thin film transistor; and

a second insulating film over the thin film transistor;

a residual of the first tungsten oxide layer over the second insulating film;

a heat sink formed over the residual of the first tungsten oxide layer, and over the first functional circuit;

a second adhesive agent formed on the circuit board;

a second functional circuit peeled from a second processing substrate at a second tungsten oxide layer, and mounted over the circuit board with the second adhesive agent therebetween, the second functional circuit comprising;

a passive element;

a third insulating film over the passive element;

a residual of the second tungsten oxide layer over the third insulating film; and

a second electrode on the residual of the second tungsten oxide layer wherein the second electrode is electrically connected to the second terminal;

an antenna pattern formed over the second functional circuit, electrically connected to the second functional circuit through the circuit board.

2. The semiconductor device according to claim 1, wherein the circuit board is a ceramic board.

3. The semiconductor device according to claim 1, wherein the circuit board is a resin substrate.

4. The semiconductor device according to claim 1, wherein the second electrode is electrically connected to the terminal by a wire.

5. The semiconductor device according to claim 1, wherein the passive element is at least one of a capacitor, an inductor and a resistor element.

6. The semiconductor device according to claim 1, wherein the heat sink is bonded to the second insulating film by an adhesive agent.

7. The semiconductor device according to claim 1, wherein the first functional circuit comprises a CMOS circuit.

8. The semiconductor device according to claim 1, wherein the second functional circuit is at least one of a low pass filter, a bandpass filter, a diplexer, a coupler and a balun.

9. A semiconductor device comprising:

a circuit board;

at least first and second terminals formed on the circuit board;

a first adhesive agent formed on the circuit board;

a first functional circuit peeled from a first processing substrate at a first tungsten oxide layer, and mounted over the circuit board with the first adhesive agent therebetween, the first functional circuit comprising;

a central processing unit including at least one thin film transistor;

a first electrode electrically connected to the first terminal;

a first insulating film on the first electrode and the first adhesive agent, wherein the thin film transistor over the first insulating layer wherein the first electrode is electrically connected to the thin film transistor;

a second insulating film over the thin film transistor;

a residual of the first tungsten oxide layer over the second insulating film; and

a heat sink formed over the residual of the first tungsten oxide layer, and over the first functional circuit;

a second adhesive agent formed on the circuit board;

a second functional circuit peeled from a second processing substrate at a second tungsten oxide layer, and mounted over the circuit board with the second adhesive agent therebetween, the second functional circuit comprising;

a high frequency circuit including a passive element;

a third insulating film over the passive element;

a residual of the second tungsten oxide layer over the third insulating film; and

a second electrode on the residual of the second tungsten oxide layer wherein the second electrode is electrically connected to the second terminal;

an antenna pattern formed over the second functional circuit, electrically connected to the second functional circuit through the circuit board.

10. The semiconductor device according to claim 9, wherein the circuit board is a ceramic board.

11. The semiconductor device according to claim 9, wherein the circuit board is a resin substrate.

12. The semiconductor device according to claim 9, wherein the second electrode is electrically connected to the terminal by a wire.

13. The semiconductor device according to claim 9, wherein the passive element is at least one of a capacitor, an inductor and a resistor element.

14. The semiconductor device according to claim 9, wherein the heat sink is bonded to the second insulating film by an adhesive agent.

15. The semiconductor device according to claim 9, wherein the second functional circuit is at least one of a low pass filter, a bandpass filter, a diplexer, a coupler and a balun.