Film thickness measuring method of member to be processed using emission spectroscopy and processing method of the member using the measuring method

• US 7,230,720 B2
• Filed: 10/25/2005
• Issued: 06/12/2007
• Est. Priority Date: 06/20/2000
• Status: Expired due to Term

• Current Assignee: Hitachi, Ltd.
• Original Assignee: Hitachi, Ltd.
• Inventors: Fujii, Takashi, Yoshigai, Motohiko, Usui, Tatehito, Kaji, Tetsunori
• Primary Examiner(s): Toatley, Jr.; Gregory J.
• Assistant Examiner(s): Connolly; Patrick J.
• Application Number:
  US11/256,967
• Publication Number:
  US 20060039008A1
• Time in Patent Office: 595 Days
• Field of Search: 356/451, 356/503, 356/504, 356630-632, 438/14, 438/16
• US Class Current: 356/503
• CPC Class Codes: G01B 11/0625 with measurement of absorption or reflection
• CPC Class Codes: G01B 11/0675 using interferometry
• CPC Class Codes: H01L 21/67069 for drying etching
• CPC Class Codes: H01L 22/26 Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement endpoint detection arrangements in CMP apparatus B24B37/013, in discharge apparatus H01J37/32
• CPC Class Codes: Y10T 436/106664 Blood serum or blood plasma standard or control

Abstract

A standard pattern of a differential value of an interference light is set with respect to a predetermined film thickness of a first member to be processed. The standard pattern uses a wavelength as a parameter. Then, an intensity of an interference light of a second member to be processed, composed just like the first member, is measured with respect to each of a plurality of wavelengths so as to obtain a real pattern of an differential value of the measured interference light intensity. The real pattern also uses a wavelength as a parameter. Then, the film thickness of the second member is obtained according to the standard pattern and the real pattern of the differential value.

Claims

1. A system comprising:

a film thickness measuring apparatus for measuring a film thickness of a member to be processed, including;

a differential waveform pattern data base for holding a standard pattern consisting of a time differential value of an interference light for each of multiple wavelengths with respect to a film thickness of a first member to be processed;

a unit for measuring an intensity of an interference light for each of multiple wavelengths of a second member to be processed;

a unit for obtaining a real pattern consisting of time differential values of measured interference light intensities; and

a unit for obtaining a range of a film thickness of the film by using a pattern of zero-cross points of the differential values of intensities of the received interference light for a first wavelength among the received interference lights of the multiple wavelengths; and

a unit for determining a processed amount of the film within the obtained thickness range of the film by using a pattern of zero-cross points of the differential values of intensities of the received interference light for a second wavelength among the received interference lights of the multiple wavelengths.

2. A semiconductor wafer processing method for processing a film on a surface of a semiconductor wafer disposed within a vacuum chamber by using plasma formed within the vacuum chamber, comprising:

receiving interference lights of multiple wavelengths emitted from the surface of the semiconductor wafer during the processing of the semiconductor wafer and detecting differential values of intensities of the received interference light for each of the multiple wavelengths;

obtaining a range of a thickness of the film by using a pattern of zero-cross points of the differential values of intensities of the received interference light for a first wavelength among the received interference lights of the multiple wavelengths;

determining a processed amount of the film within the obtained thickness range of the film by using a pattern of zero-cross points of the differential values of intensities of the received interference light for a second wavelength among the received interference lights of the multiple wavelengths; and

adjusting the processing of the semiconductor wafer based on the determined processed amount of the film.

3. A semiconductor wafer processing method according to claim 2, comprising:

determining the thickness of the film by using a number of the zero-cross points of the differential values of intensities of the received interference light for the first wavelength or the second wavelength.

4. A semiconductor wafer processing method according to claim 2, comprising:

determining the thickness of the film by using a number of the zero-cross points of the differential values of intensities of the received interference light for the first wavelength or the second wavelength.

5. A semiconductor wafer processing method according to claim 2, wherein

the obtaining includes a sub-operation of obtaining the range of the thickness of the film by using a pattern of zero-cross points of first differential values of intensities of the received interference light for the first wavelength, and

the determining includes a sub-operation of determining the processed amount of the film by using a pattern of zero-cross points of second differential values of intensities of the received interference light for the second wavelength.

6. A semiconductor wafer processing method according to claim 2, wherein

the obtaining includes a sub-operation of obtaining the range of the thickness of the film by using a pattern of zero-cross points of first differential values of intensities of the received interference light for the first wavelength, and

the determining includes a sub-operation of determining the processed amount of the film by using a pattern of zero-cross points of second differential values of intensities of the received interference light for the second wavelength.

7. A semiconductor wafer processing method according to claim 4, wherein

the obtaining includes a sub-operation of obtaining the range of the thickness of the film by using a pattern of zero-cross points of first differential values of intensities of the received interference light for the first wavelength, and

the determining includes a sub-operation of determining the processed amount of the film by using a pattern of zero-cross points of second differential values of intensities of the received interference light for the second wavelength.

8. A semiconductor wafer processing apparatus for processing a film on a surface of a semiconductor wafer disposed on a sample stand within a vacuum chamber by using plasma formed within the vacuum chamber, comprising:

a port which is provided at a wall of the vacuum chamber and facing the plasma so as to transmit lights emitted from a surface of the semiconductor wafer; and

a measuring apparatus which receives via the port, interference lights of multiple wavelengths emitted from the surface of the semiconductor wafer during the processing of the semiconductor wafer, wherein the measuring apparatus includes a functions of;

detecting differential values of intensities of the received interference light for each of the multiple wavelengths;

obtaining a range of a thickness of the film by using a pattern of zero-cross points of the differential values of intensities of the received interference light for a first wavelength among the received interference lights of the multiple wavelengths; and

determining a processed amount of the film within the obtained thickness range of the film by using a pattern of zero-cross points of the differential values of intensities of the received interference light for a second wavelength among the received interference lights of the multiple wavelengths.

9. A semiconductor wafer processing apparatus according to claim 8, wherein the measuring apparatus adjusts the processing of the semiconductor wafer based on the determined processed amount of the film.

10. A semiconductor wafer processing apparatus according to claim 8, wherein the measuring apparatus determines the thickness of the film by using a number of the zero-cross points of the differential values of intensities of the received interference light for the first wavelength or the second wavelength.

11. A semiconductor wafer processing apparatus according to claim 9, wherein the measuring apparatus determines the thickness of the film by using a number of the zero-cross points of the differential values of intensities of the received interference light for the first wavelength or the second wavelength.

12. A semiconductor wafer processing apparatus according to claim 8, wherein the measuring apparatus obtains the range of the thickness of the film by using a pattern of zero-cross points of first differential values of intensities of the received interference light for the first wavelength, and determines the processed amount of the film by using a pattern of zero-cross points of second differential values of intensities of the received interference light for the second wavelength.

13. A semiconductor wafer processing apparatus according to claim 9, wherein the measuring apparatus obtains the range of the thickness of the film by using a pattem of zero-cross points of first differential values of intensities of the received interference light for the first wavelength, and determines the processed amount of the film by using a pattern of zero-cross points of second differential values of intensities of the received interference light for the second wavelength.

14. A semiconductor wafer processing apparatus according to claim 11, wherein the measuring apparatus obtains the range of the thickness of the film by using a pattern of zero-cross points of first differential values of intensities of the received interference light for the first wavelength, and determines the processed amount of the film by using a pattern of zero-cross points of second differential values of intensities of the received interference light for the second wavelength.