Three-dimensional memory device incorporating segmented bit line memory array
First Claim
1. An integrated circuit comprising:
- a three-dimensional memory array having a respective plurality of word lines on each of at least one layer of the memory array, having a respective plurality of bit line segments on each of at least two layers of the memory array, defining a memory layer for each vertically adjacent word line layer and segmented bit line layer; and
a respective plurality of global bit lines on each of at least a first global bit line layer;
a respective plurality of memory segments on each of said memory layers, each memory segment comprisinga respective plurality of memory cells coupled to a respective bit line segment; and
a respective segment switch device for coupling the respective bit line segment to an associated global bit line by way of a vertical connection which is shared by at least one memory segment on each of at least two memory layers.
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Abstract
A three-dimensional (3D) high density memory array includes multiple layers of segmented bit lines (i.e., sense lines) with segment switch devices within the memory array that connect the segments to global bit lines. The segment switch devices reside on one or more layers of the integrated circuit, preferably residing on each bit line layer. The global bit lines reside preferably on one layer below the memory array, but may reside on more than one layer. The bit line segments preferably share vertical connections to an associated global bit line. In certain EEPROM embodiments, the array includes multiple layers of segmented bit lines with segment connection switches on multiple layers and shared vertical connections to a global bit line layer. Such memory arrays may be realized with much less write-disturb effects for half selected memory cells, and may be realized with a much smaller block of cells to be erased.
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Citations
37 Claims
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1. An integrated circuit comprising:
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a three-dimensional memory array having a respective plurality of word lines on each of at least one layer of the memory array, having a respective plurality of bit line segments on each of at least two layers of the memory array, defining a memory layer for each vertically adjacent word line layer and segmented bit line layer; and a respective plurality of global bit lines on each of at least a first global bit line layer; a respective plurality of memory segments on each of said memory layers, each memory segment comprising a respective plurality of memory cells coupled to a respective bit line segment; and a respective segment switch device for coupling the respective bit line segment to an associated global bit line by way of a vertical connection which is shared by at least one memory segment on each of at least two memory layers. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36)
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37. An integrated circuit comprising:
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a three-dimensional memory array having a respective plurality of word lines on each of at least one layer of the memory array, having a respective plurality of bit line segments on each of at least two layers of the memory array, defining a memory layer for each vertically adjacent word line layer and segmented bit line layer; and a respective plurality of global bit lines on a first global bit line layer disposed below the memory layers; a respective plurality of global bit lines on a second global bit line layer disposed above the memory layers; and a respective plurality of memory segments on each of said memory layers, each memory segment comprising a respective plurality of memory cells coupled to a respective bit line segment; and a respective segment switch device for coupling the respective bit line segment to an associated global bit line by way of a vertical connection which is shared by at least one memory segment on each of at least two memory layers.
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Specification