Method and apparatus for monitoring integrated circuit fabrication

• US 7,233,874 B2
• Filed: 01/24/2005
• Issued: 06/19/2007
• Est. Priority Date: 11/04/2002
• Status: Active Grant

• Current Assignee: ASML Netherlands BV (ASML Holding NV)
• Original Assignee: Brion Technologies Incorporated (ASML Holding NV)
• Inventors: Ye, Jun, Chen, Xun
• Primary Examiner(s): Raymond; Edward
• Application Number:
  US11/041,807
• Publication Number:
  US 20050125184A1
• Time in Patent Office: 876 Days
• Field of Search: 702/117, 702/118, 702182-185, 438/5, 438/10, 438/11, 438/14, 438/17, 438/18, 438/400, 438/200
• US Class Current: 702/117
• CPC Class Codes: G01D 9/005 Solid-state data loggers
• CPC Class Codes: H01L 21/67253 Process monitoring, e.g. flow or thickness monitoring
• CPC Class Codes: H01L 21/67276 Production flow monitoring, e.g. for increasing throughput program-control systems per se G05B19/00, e.g. total factory control G05B19/418
• CPC Class Codes: H01L 22/34 Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line switching, multiplexing, gating devices G01R19/25; process control with lithography, e.g. dose control, G03F7/20; structures for alignment control by optical means G03F7/70633
• CPC Class Codes: H01L 2224/48463 the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
• CPC Class Codes: H01L 2224/49107 on the semiconductor or solid-state body
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/13091 Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/3011 Impedance

Abstract

In one aspect, the present invention is a sensor unit for sensing process parameters of a process to manufacture an integrated circuit using integrated circuit processing equipment. In one embodiment, the sensor unit includes a substrate having a wafer-shaped profile and a first sensor, disposed on or in the substrate, to sample a first process parameter. The sensor unit of this embodiment also includes a second sensor, disposed on or in the substrate, to sample a second process parameter wherein the second process parameter is different from the first process parameter. In one embodiment, the sensor unit includes a first source, disposed on or in the substrate, wherein first source generates an interrogation signal and wherein the first sensor uses the interrogation signal from the first source to sample the first process parameter. The sensor unit may also include a second source, disposed on or in the substrate, wherein second source generates an interrogation signal and wherein the second sensor uses the interrogation signal from the second source to sample the second process parameter. The first sensor and the first source may operate in an end-point mode or in a real-time mode. In this regard, the first sensor samples the first parameter periodically or continuously while the sensor unit is disposed in the integrated circuit processing equipment and undergoing processing. In one embodiment, the first sensor is a temperature sensor and the second sensor is a pressure sensor, a chemical sensor, a surface tension sensor or a surface stress sensor.

Claims

1. A sensor unit for sensing an illumination parameter of photolithographic processing equipment that includes a mask stage and an illumination subsystem, the sensor unit comprising:

a substrate adapted to be disposed on or in the mask stage of the photolithographic processing equipment; and

a plurality of sensors including;

a first sensor, disposed on or in the substrate, to sample a light intensity of the illumination subsystem when the substrate is disposed on or in the mask stage; and

a second sensor, disposed on or in the substrate, to sample a light intensity of the illumination subsystem when the substrate is disposed on or in the mask stage.

2. The sensor unit of claim 1 wherein the first and second sensors responsively, continuousty or periodically sample the light intensity of the illumination subsystem, respectively, while the sensor unit is disposed in the photolithographic processing equipment and undergoing processing.

3. The sensor unit of claim 1 further including at least one battery, disposed on or in the substrate, to provide electrical power to the first and second sensors.

4. The sensor unit of claim 1 further includes a data storage to store data which is representative of the light intensity sampled by the first and second sensors.

5. The sensor unit of claim 1 further including:

a data storage device to store data which is representative of the light intensity sampled by the first and second sensors;

communication circuitry, coupled to the data storage device, to provide the data which is representative of the sampled light intensity of the illumination subsystem to external circuitry; and

a power source, coupled to the first and second sensors and the data storage device, to provide electrical power to the first and second sensors and the data storage device.

6. The sensor unit of claim 1 further including a controller, coupled to the first and second sensors, to control when the first and second sensors sample the light intensity of the illumination subsystem.

7. The sensor unit of claim 1 further including a controller to determine a light intensity distribution of the illumination subsystem using the light intensity of the illumination subsystem sampled by the first and second sensor.

8. The sensor unit of claim 1 further including a controller to generate control signals to change the light intensity of the illumination subsystem of the photolithographic processing equipment in response to the light intensity of the illumination subsystem sampled by the first and second sensor.

9. A sensor unit for sensing an illumination parameter of photolithographic processing equipment that includes a mask stage and an illumination subsystem, the sensor unit comprising:

a substrate adapted to be disposed on or in the mask stage of the photolithographic processing equipment;

an array of light sensors, disposed on or in the substrate, to sample a light intensity of the illumination subsystem when the substrate is disposed on or in the mask stage;

a controller to generate control signals to change the light intensity of the illumination subsystem of the photolithographic processing equipment in response to the light intensity of the illumination subsystem sampled by the array of light sensors;

communication circuitry, coupled to the controller, to provide the control signals that change the light intensity of the illumination subsystem to external circuitry; and

a power source, coupled to the array of light sensors, the controller and the communication circuitry, to provide electrical power to the array of light sensors, the controller and the communication circuitry.

10. The sensor unit of claim 9 further including a data storage device to store data which is representative of the light intensity sampled by the array of light sensors.

11. The sensor unit of claim 9 wherein the power source is at least one battery.

12. The sensor unit of claim 9 wherein the controller determines a light intensity distribution of the illumination subsystem using the light intensity sampled by the array of light sensors.

13. The sensor unit of claim 9 further including a temperature sensor, disposed on or in the substrate, to sample a temperature during operation of the photolithographic processing equipment.

14. The sensor unit of claim 9 further including a plurality of temperature sensors, disposed at a plurality of locations on or in the substrate, to sample a temperature at the plurality of locations during the operation of the photolithographic processing equipment.

15. A sensor unit for sensing an illumination parameter of photolithographic processing equipment that includes a mask stage and an illumination subsystem, the sensor unit comprising:

a substrate adapted to be disposed on or in the mask stage of the photolithographic processing equipment;

an array of light sensors, disposed on or in the substrate, to sample a light intensity of the illumination subsystem when the substrate is disposed on or in the mask stage;

a controller to control when the array of light sensors sample the light intensity of the illumination subsystem; and

a power source, coupled to the array of light sensors and the controller, to provide electrical power to the array of light sensors and the controller.

16. The sensor unit of claim 15 wherein the controller generates control signals to change the light intensity of the illumination subsystem of the photolithographic processing equipment in response to the light intensity of the illumination subsystem sampled by the array of light sensors.

17. The sensor unit of claim 15 wherein the controller determines a light intensity distribution of the illumination subsystem using the light intensity of the illumination subsystem sampled by the array of light sensors.

18. The sensor unit of claim 15 wherein the power source is at least one battery.

19. The sensor unit of claim 15 further including a plurality of temperature sensors, disposed at a plurality of locations on or in the substrate, to sample a temperature at the plurality of locations during the operation of the photolithographic processing equipment.

20. The sensor unit of claim 15 further including a data storage device to store data which is representative of the light intensity sampled by the array of light sensors.

21. The sensor unit of claim 20 further including communication circuitry, coupled to the data storage device, to provide the data which is representative of the light intensity sampled by the array of light sensors to external circuitry.

22. The sensor unit of claim 21 wherein the communication circuitry provides the data to external circuitry during operation of the photolithographic processing equipment.