Methods for making thick film elements
First Claim
1. A method of producing at least one thick-film element comprising:
- depositing a material onto a surface of at least one first substrate to form at least one thick-film element structure having a thickness of approximately greater than 10 μ
m to approximately 100 μ
m;
bonding the at least one thick-film element structure to a second substrate;
removing the at least one first substrate from the at least one thick-film element structure using a liftoff process using radiation energy including,emitting, from a radiation source, a radiation beam through the first substrate to an attachment interface formed between the first substrate and the at least one thick-film element structure at the surface of the first substrate, wherein the first substrate is substantially transparent at the wavelength of the radiation beam, permitting the radiation beam to generate sufficient energy at the interface to break the attachment.
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Abstract
A method of producing at least one thick film element, including depositing a material on a surface of at least one first substrate to form at least one thick film element structure having a thickness of approximately greater than 10 μm to 100 μm. Then, then the at least one thick film element structure is bonded to a second substrate, and the at least one first substrate is removed from the at least one thick film element structure using a lift-off process employing radiation energy. The lift-off process including emitting, from a radiation source, a radiation beam through the first substrate to an attachment interface formed between the first substrate and the at least one thick film element structure at the first surface of the first substrate. The first substrate being substantially transparent at the wavelength of the radiation beam, permitting the radiation beam to generate sufficient energy at the interface to break the attachment.
45 Citations
21 Claims
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1. A method of producing at least one thick-film element comprising:
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depositing a material onto a surface of at least one first substrate to form at least one thick-film element structure having a thickness of approximately greater than 10 μ
m to approximately 100 μ
m;bonding the at least one thick-film element structure to a second substrate; removing the at least one first substrate from the at least one thick-film element structure using a liftoff process using radiation energy including, emitting, from a radiation source, a radiation beam through the first substrate to an attachment interface formed between the first substrate and the at least one thick-film element structure at the surface of the first substrate, wherein the first substrate is substantially transparent at the wavelength of the radiation beam, permitting the radiation beam to generate sufficient energy at the interface to break the attachment. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
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Specification