TMR sensor

• US 7,234,360 B2
• Filed: 04/03/2003
• Issued: 06/26/2007
• Est. Priority Date: 04/04/2002
• Status: Expired due to Fees

• Current Assignee: Infineon Technologies AG, Stiftung Caesar
• Original Assignee: Infineon Technologies AG, Stifting Caesar
• Inventors: Wecker, Joachim, Lohndorf, Markus, Quandt, Eckhard, Ludwig, Alfred, Ruhrig, Manfred
• Primary Examiner(s): Cygan; Michael
• Assistant Examiner(s): DAVIS, OCTAVIA L
• Application Number:
  US10/405,934
• Publication Number:
  US 20040050172A1
• Time in Patent Office: 1,545 Days
• Field of Search: 737/79, 737/63, 737/28, 737/54, 428/692, 428/611, 428/332, 360/323, 360/324.12, 360/324, 360/324.2, 257/421, 257/422, 365/170, 365/171
• US Class Current: 73/779
• CPC Class Codes: G01L 1/125 by using magnetostrictive means magnetostrictive sensors H10N35/101

Abstract

A sensor for measuring mechanical changes in length, in particular a compressive and/or tensile stress sensor, includes a sandwich system with two flat and superposed electrodes separated from each other by a tunnel element (tunnel barrier), in particular an oxide barrier, a current being set up between the electrodes and through the tunnel barrier, one electrode consisting of a magnetostrictive layer 3 which responds to elongation, and wherein the contributions of the anisotropies caused by mechanical tension are larger than those from the intrinsic anisotropies, relative changes in system resistance ΔR/R larger than 10% at room temperature being attained during elongation.

Claims

1. A sensor for measuring mechanical changes in length, comprising a sandwich system with two flat and superposed electrodes separated by a tunnel barrier, an electric current being set up between the electrodes and through the tunnel barrier,

wherein

a first one of the electrodes includes a highly magnetostrictive layer responding to elongation, having signal contributions due to anisotropies caused by mechanical tension being larger than those due to intrinsic anisotropies, and providing relative changes in system resistance Δ

R/R of more than 10% upon elongation at room temperature; and

the highly magnetostrictive layer includes an alloy containing CoFe.

2. The sensor as claimed in claim 1, wherein a second one of the electrodes includes a magnetic layer or a system of layers as a reference layer, and wherein the reference layer has signal contributions due to anisotropies caused by mechanical tension being less than those due to intrinsic anisotropies.

3. The sensor as claimed in claim 1, wherein the relative changes in system resistance Δ

R/R are between 20 and 50%.

4. The sensor as claimed in claim 1, wherein the highly magnetostrictive layer includes a soft magnetic material exhibiting large spin polarization.

5. The sensor as claimed in claim 1, wherein the thickness of the alloy containing CoFe is less than 5 nm and said alloy is deposited on a layer made of an anti-ferromagnetic material.

6. The sensor as claimed in claim 2, wherein the reference layer is coupled by exchange coupling with a layer made of a natural anti-ferromagnetic material, whereby unidirectional anisotropy is created in the reference layer.

7. The sensor as claimed in claim 1, wherein the sandwich system fitted with the three superposed layers is covered further wit additional layers for the purpose of compensating interferences.

8. The sensor as claimed in claim 1, wherein the tunnel barrier is made by sputtering and exhibits a thickness of less than 50 nm.

9. The sensor as claimed in claim 8, wherein the tunnel barrier is a layer of aluminum oxide oxidized by plasma oxidation and exhibits a thickness of less than 5 nm.

10. The sensor as claimed in claim 1, wherein the layers of the sandwich system are approximately rectangular and have all sides less than 100 microns.

11. The sensor as claimed in claim 1, wherein the first electrode is a magnetically hard layer exhibiting uni-axial anisotropy.

12. The sensor as claimed in claim 1, wherein the highly magnetostrictive layer is composed of several single layers.

13. The sensor as claimed in claim 1, wherein the tunnel barrier is made by sputtering and exhibits a thickness of less than 20 nm.

14. The sensor as claimed in claim 8, wherein the tunnel barrier is a layer of aluminum oxide oxidized by plasma oxidation and exhibits a thickness of less than 1.5 nm.

15. A sensor for measuring mechanical changes in length, comprising a multilayer structure comprising a plurality of layers stacked one upon another in a thickness direction of said structure;

said layers comprising upper and lower layers which are electrodes and an intermediate layer sandwiched between said upper and lower layers;

said intermediate layer being a tunnel barrier which exhibits the tunnel magneto-resistance (TMR) effect, and defines, together with said electrodes, a tunnel current path tat extends from the upper layer, through an entire thickness of the intermediate layer and to the lower layer; and

wherein

said upper layer includes a highly magnetostrictive material that responds to stress applied thereto; and

the highly magnetostrictive layer includes a CoFe alloy.

16. The sensor as claimed in claim 15, wherein a material of the lower layer is magnetically harder than the highly magnetostrictive material of the upper layer.

17. The sensor as claimed in claim 16, wherein the magnetically harder material of the lower layer exhibits uni-axial anisotropy pointing anti-parallel to the orientation of the magnetically softer, highly magnetostrictive material of the upper layer.

18. The sensor as claimed in claim 17, wherein lower layer comprises a magnetic layer coupled to an anti-ferromagnetic layer.

19. The sensor as claimed in claim 15, wherein the highly magnetostrictive material of the upper layer includes an amorphous alloy of Co.

20. The sensor as claimed in claim 15, further comprising a mechanism for physically elongating or compressing said highly magnetostrictive material of said upper layer.

21. The sensor as claimed in claim 15, further comprising a measuring element coupled to said electrodes for measuring a current flowing in said current path when stress is applied to said highly magnetostrictive material of said upper layer, and, based on the measured current, outputting a signal indicative of a change in a physical dimension of said highly magnetostrictive material of said upper layer, said change being caused by said stress.

22. The sensor as claimed in claim 15, wherein said highly magnetostrictive material of said upper layer is elongatable by at least 33%.

25. The sensor as claimed in claim 15, wherein said CoFe alloy includes one selected from the group consisting of Co₅₀Fe₅₀ and (Fe₉₀Co₁₀)₇₈Si₁₂B₁₀.

26. The sensor as claimed in claim 15, wherein said lower layer is a reference layer having low magnetostriction or a magnetostriction sign opposite to that of the highly magnetostrictive material of said upper layer.

23. A sensor for measuring mechanical changes in length, comprising a multilayer structure comprising a plurality of layers stacked one upon another in a thickness direction of said structure;

said layers comprising upper and lower layers which are electrodes and an intermediate layer sandwiched between said upper and lower layers;

said intermediate layer being a tunnel barrier which exhibits the tunnel magneto-resistance (TMR) effect, and defines, together with said electrodes, a tunnel current path that extends from the upper layer, through an entire thickness of the intermediate layer and to the lower layer; and

wherein

said upper layer includes a highly magnetostrictive material that responds to stress applied thereto; and

said lower layer is a reference layer having low magnetostriction or a magnetostriction sign opposite to that of the highly magnetostrictive material of said upper layer.

24. A method of measuring physical changes in length, said method comprising

providing a multilayer structure comprising a plurality of layers stacked one upon another in a thickness direction of said structure;

wherein

said layers comprise upper and lower layers which are electrodes and an intermediate layer sandwiched between said upper and lower layers;

said intermediate layer is a tunnel barrier which exhibits the tunnel magneto-resistance (TMR) effect, and defines, together with said electrodes, a tunnel current path that extends from the upper layer, through an entire thickness of the intermediate layer and to the lower layer; and

said upper layer includes a highly magnetostrictive material that responds to stress applied thereto, and the highly magnetostrictive layer includes a CoFe alloy;

applying stress to said highly magnetostrictive material of said upper layer to cause a change in a physical dimension of said material of said upper highly magnetostrictive layer;

measuring a current flowing in said current path when said stress is applied to said highly magnetostrictive material of said upper layer; and

based on the measured current, outputting a signal indicative of said change in the physical dimension of said material of said upper highly magnetostrictive layer.