Conductor treating single-wafer type treating device and method for semi-conductor treating
First Claim
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1. A single-substrate processing apparatus for a semiconductor process, comprising:
- a process chamber configured to accommodate a target substrate;
an exhaust system configured to vacuum-exhaust the process chamber;
a gas supply system configured to supply a process gas into the process chamber;
a worktable disposed in the process chamber and having a thermally conductive mount surface configured to place the target substrate thereon, the worktable including a lower block and an upper block;
a flow passage formed in the upper block of the worktable, in which a thermal medium flows for adjusting temperature of the target substrate through the mount surface;
an auxiliary flow passage formed in the lower block of the worktable a first thermal medium supply system including a first cooler and a heater connected in parallel to a supply line connected to the flow passage and configured to selectively supply a first cooling medium and a heating medium into the flow passage;
a second thermal medium supply system including a second cooler connected to the auxiliary flow passage and configured to supply a second cooling medium into the auxiliary flow passage when the first cooling medium is supplied into the flow passage;
and a thermally conductive gas supply system configured to supply a thermally conductive gas between the upper block and the lower block, wherein the thermally conductive gas is supplied from the thermally conductive gas supply system to increase thermal conductivity between the upper block and the lower block when the first and second cooling mediums are supplied into the flow passage and the auxiliary flow passage, respectively, while supply of the thermally conductive gas from the thermally conductive gas supply system is configured to stop when the heating medium is supplied into the flow passage.
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Abstract
A single-substrate processing apparatus (20) has a worktable (40) disposed in a process chamber (24), which accommodates a target substrate (W). The worktable (40) has a thermally conductive mount surface (41) to place the target substrate (W) thereon. The worktable (40) is provided with a flow passage (50) formed therein, in which a thermal medium flows for adjusting temperature of the target substrate (W) through the mount surface (41). The flow passage (50) is connected to a thermal medium supply system (54), which selectively supplies a cooling medium and a heating medium.
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Citations
22 Claims
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1. A single-substrate processing apparatus for a semiconductor process, comprising:
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a process chamber configured to accommodate a target substrate; an exhaust system configured to vacuum-exhaust the process chamber; a gas supply system configured to supply a process gas into the process chamber; a worktable disposed in the process chamber and having a thermally conductive mount surface configured to place the target substrate thereon, the worktable including a lower block and an upper block; a flow passage formed in the upper block of the worktable, in which a thermal medium flows for adjusting temperature of the target substrate through the mount surface; an auxiliary flow passage formed in the lower block of the worktable a first thermal medium supply system including a first cooler and a heater connected in parallel to a supply line connected to the flow passage and configured to selectively supply a first cooling medium and a heating medium into the flow passage; a second thermal medium supply system including a second cooler connected to the auxiliary flow passage and configured to supply a second cooling medium into the auxiliary flow passage when the first cooling medium is supplied into the flow passage; and a thermally conductive gas supply system configured to supply a thermally conductive gas between the upper block and the lower block, wherein the thermally conductive gas is supplied from the thermally conductive gas supply system to increase thermal conductivity between the upper block and the lower block when the first and second cooling mediums are supplied into the flow passage and the auxiliary flow passage, respectively, while supply of the thermally conductive gas from the thermally conductive gas supply system is configured to stop when the heating medium is supplied into the flow passage. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A single-substrate processing method for use in a single-substrate processing apparatus for a semiconductor process including a process chamber configured to accommodate a target substrate;
- an exhaust system configured to vacuum-exhaust the process chamber;
a gas supply system configured to supply a process gas into the process chamber;
a worktable disposed in the process chamber and having a thermally conductive mount surface configured to place the target substrate thereon, the worktable including a lower block and an upper block;
a flow passage formed in the upper block of the worktable, in which a thermal medium flows for adjusting temperature of the target substrate through the mount surface;
an auxiliary flow passage formed in the lower block of the worktable;
a first thermal medium supply system including a first cooler and a heater connected in parallel to a supply line connected to the flow passage and configured to selectively supply a first cooling medium and a heating medium into the flow passage;
a second thermal medium supply system including a second cooler connected to the auxiliary flow passage and configured to supply a second cooling medium into the auxiliary flow passage when the first cooling medium is supplied into the flow passage; and
a thermally conductive gas supply system configured to supply a thermally conductive gas between the upper block and the lower block, wherein the thermally conductive gas is supplied from the thermally conductive gas supply system to increase thermal conductivity between the upper block and the lower block when the first and second cooling mediums are supplied into the flow passage and the auxiliary flow passage, respectively, while supply of the thermally conductive gas from the thermally conductive gas supply system is configured to stop when the heating medium is supplied into the flow passage the method, comprising;setting the process chamber in vacuum; performing a first process while supplying the first cooling medium into the flow passage to set the target substrate at a first process temperature; performing a second process while supplying the heating medium into the flow passage to set the target substrate at a second process temperature higher than the first process temperature wherein the first and second cooling mediums and the thermally conductive gas are not supplied; and cooling down the target substrate while supplying the first and second cooling mediums into the flow passage and the auxiliary flow passage, respectively, and supplying the thermally conductive gas to increase thermal conductivity between the upper block and the lower block. - View Dependent Claims (11, 12)
- an exhaust system configured to vacuum-exhaust the process chamber;
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13. A single-substrate processing apparatus for performing a first process of converting a semiconductor oxide film on a target substrate into an intermediate film, and a second process of evaporating the intermediate film by thermal decomposition, to remove the semiconductor oxide film, the apparatus comprising:
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a process chamber configured to accommodate a target substrate; an exhaust system configured to vacuum-exhaust the process chamber; a gas supply system configured to supply the process chamber selectively with a first process gas, which reacts with the semiconductor oxide film to convert the semiconductor oxide film into the intermediate film in the first process, and a second process gas, which assists removal of evaporated matters of the intermediate film in the second process; a worktable disposed in the process chamber and having a thermally conductive mount surface configured to place the target substrate thereon, the worktable including a lower block and an upper block;
a flow passage formed in the upper block of the worktable, in which a thermal medium flows for adjusting temperature of the target substrate through the mount surface;an auxiliary flow passage formed in the lower block of the worktable, a first thermal medium supply system including a first cooler and a heater connected in parallel to a supply line connected to the flow passage and configured to selectively supply a first cooling medium and a heating medium into the flow passage, wherein the first cooling medium is supplied into the flow passage in the first process, and the heating medium is supplied into the flow passage in the second process; and
a second thermal medium supply system including a second cooler connected to the auxiliary flow passage and configured to supply a second cooling medium into the auxiliary flow passage anda thermally conductive gas supply system configured to supply a thermally conductive gas between the upper block and the lower block, wherein the thermally conductive gas is supplied from the thermally conductive as supply system to increase thermal conductivity between the upper block and the lower block when the first and second cooling mediums are supplied into the flow passage and the auxiliary flow passage, respectively, while supply of the thermally conductive gas from the thermally conductive gas supply system is configured to stop when the heating medium is supplied into the flow passage. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20, 21, 22)
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Specification