Semiconductor device and method for manufacturing the same
First Claim
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1. A semiconductor device comprising:
- an insulator formed on a semiconductor substrate;
a first gate electrode formed on the insulator and including silicon-germanium, wherein a germanium concentration is higher near an interface to the insulator and lower in a surface side opposite to the insulator; and
a second gate electrode formed on the insulator and including silicon-germanium, wherein a germanium concentration is substantially uniform and an n-type dopant of a concentration of above 6×
1020 atoms/cm3 is contained.
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Abstract
A semiconductor device suitable for the miniaturization and comprising properly controlled Si/SiGe gate electrode comprises an insulator formed on a semiconductor substrate, a first gate electrode formed on the insulator and including silicon-germanium, wherein a germanium concentration is higher near an interface to the insulator and lower in a surface side opposite to the insulator, and a second gate electrode formed on the insulator and including silicon-germanium, wherein a germanium concentration is substantially uniform and an n-type dopant of a concentration of above 6×1020 atoms/cm3 is contained.
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Citations
20 Claims
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1. A semiconductor device comprising:
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an insulator formed on a semiconductor substrate; a first gate electrode formed on the insulator and including silicon-germanium, wherein a germanium concentration is higher near an interface to the insulator and lower in a surface side opposite to the insulator; and a second gate electrode formed on the insulator and including silicon-germanium, wherein a germanium concentration is substantially uniform and an n-type dopant of a concentration of above 6×
1020 atoms/cm3 is contained. - View Dependent Claims (2, 3, 4)
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5. A semiconductor device comprising:
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an insulator formed on a semiconductor substrate; a first gate electrode formed on the semiconductor substrate and including silicon-germanium, wherein a germanium concentration is higher near an interface to the insulator and lower in a surface side opposite to the insulator, and at least one of carbon, nitrogen or oxygen of a concentration of above 1×
1015 atoms/cm2 but below 1×
1016 atoms/cm2 is contained; anda second gate electrode formed on the insulator and including silicon-germanium, wherein a germanium concentration is substantially uniform and an n-type dopant of a concentration of above 6×
1020 atoms/cm3 is contained. - View Dependent Claims (6, 7, 8, 9)
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10. A method for manufacturing a semiconductor device comprising:
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forming an insulator on a semiconductor substrate; forming a first silicon film on the insulator; forming a semiconductor film containing silicon and germanium on the first silicon film; forming a second silicon film on the semiconductor film; introducing an n-type dopant of a concentration of above 6×
1020 atoms/cm3 into at least the second silicon film in a second gate electrode forming area;forming first and second gate electrodes by processing the first silicon film, semiconductor film and second silicon film; and heat treating the semiconductor substrate with the first and second gate electrodes formed thereon to allow the germanium in the first and second gate electrodes to be redistributed within each gate electrode to a distribution different from each other. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17)
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18. A method for manufacturing a semiconductor device comprising:
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forming an insulator on a semiconductor substrate; forming a first silicon film on the insulator; forming a semiconductor film containing silicon and germanium on the first silicon film; forming a second silicon film on the semiconductor film; introducing an n-type dopant of a concentration of above 6×
1020 atoms/cm3 into at least the second silicon film in a second gate electrode forming area;heat treating the semiconductor substrate to allow the germanium in the first and second gate electrodes to be redistributed within each gate electrode to a distribution different from each other; forming first and second electrodes by processing the first silicon film, semiconductor film and second silicon film; and laterally etching the first gate electrode to make a width in a channel direction near an interface of the gate electrode to the insulator narrower than that at a surface side thereof. - View Dependent Claims (19, 20)
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Specification